HGTG30N60C3 Data Sheet January 2000 63A, 600V, UFS Series N-Channel IGBT Features The HGTG30N60C3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 63A, 600V at TC = 25oC File Number 4042.2 • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 230ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC STYLE TO-247 E C G Formerly Developmental Type TA49051. Ordering Information PART NUMBER HGTG30N60C3 PACKAGE TO-247 BRAND G30N60C3 NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG30N60C3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG30N60C3 UNITS Collector To Emitter Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate To Emitter Voltage Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate To Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 14) . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 63 30 252 ±20 ±30 60A at 600V 208 1.67 100 -40 to 150 260 4 15 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL Collector To Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter To Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V Collector To Emitter Leakage Current CollectorTo Emitter Saturation Voltage Gate To Emitter Threshold Voltage Gate To Emitter Leakage Current Switching SOA Gate To Emitter Plateau Voltage ICES VCE(SAT) VGE(TH) TEST CONDITIONS - - 250 µA TC = 150oC - - 2.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.5 1.8 V TC = 150oC - 1.7 2.0 V TC = 25oC 3.0 5.2 6.0 V - - ±100 nA VCE(PK) = 480V 200 - - A VCE(PK) = 600V 60 - - A IC = 250µA, VCE = VGE VGE = ±20V SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVCES Current Turn-On Delay Time td(ON)I TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 3Ω, L = 100µH trI td(OFF)I UNITS VCE = BVCES QG(ON) Current Turn-Off Delay Time MAX TC = 25oC On-State Gate Charge Current Rise Time TYP VCE = BVCES IGES VGEP MIN VGE = 15V VGE = 20V - 8.1 - V - 162 180 nC - 216 250 nC - 40 - ns - 45 - ns - 320 400 ns - 230 275 ns - 1050 - µJ Current Fall Time tfI Turn-On Energy EON Turn-Off Energy (Note 3) EOFF - 2500 - µJ Thermal Resistance RθJC - - 0.6 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3 was tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total turn-off energy loss. Turn-On losses include diode losses. 2 HGTG30N60C3 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VCE = 10V 125 100 TC = 150oC 75 TC = 25oC 50 TC = -40oC 25 0 4 6 8 10 PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC 150 125 9.5V 100 9.0V 75 8.5V 50 8.0V 25 7.0V 0 12 0 VGE, GATE TO EMITTER VOLTAGE (V) TC = -40oC PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 10V 125 100 TC = 25oC 75 TC = 150oC 50 25 0 0 1 2 3 4 5 PULSE DURATION = 250µs DUTY CYCLE <0.5% 125 VGE = 15V TC = 150oC 100 TC = -40oC 60 50 40 30 20 10 0 75 100 125 150 TC , CASE TEMPERATURE (oC) FIGURE 5. MAXIMUM DC COLLECTOR CURRENT vs CASE TEMPERATURE 3 TC = 25oC 75 50 25 0 0 1 2 3 4 5 FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE tSC , SHORT CIRCUIT WITHSTAND TIME (µs) ICE , DC COLLECTOR CURRENT (A) VGE = 15V 50 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE 25 2 4 6 8 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 150 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 70 7.5V FIGURE 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 1. TRANSFER CHARACTERISTICS 150 10.0V 12.0V VGE = 15.0V 25 500 VCE = 360V, RG = 25Ω, TJ = 125oC 450 400 20 ISC 350 300 15 250 200 10 tSC 150 5 10 11 12 13 14 100 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 6. SHORT CIRCUIT WITHSTAND TIME ISC, PEAK SHORT CIRCUIT CURRENT (A) 150 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTG30N60C3 Typical Performance Curves 500 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V td(OFF)I , TURN-OFF DELAY TIME (ns) td(ON)I , TURN-ON DELAY TIME (ns) 200 (Continued) 100 VGE = 10V 50 40 VGE = 15V 30 20 10 10 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 400 VGE = 15V 300 VGE = 10V 200 100 20 30 40 50 60 10 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 500 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 400 tfI , FALL TIME (ns) trI , TURN-ON RISE TIME (ns) 60 FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 500 VGE = 10V 100 VGE = 15V 300 VGE = 10V 200 VGE = 15V 100 10 10 20 30 40 50 60 10 ICE , COLLECTOR TO EMITTER CURRENT (A) 7.0 6.0 5.0 VGE = 10V 4.0 3.0 2.0 VGE = 15V 0 10 20 30 40 50 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 4 40 50 60 6.0 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 1.0 30 FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT EOFF, TURN-OFF ENERGY LOSS (mJ) 8.0 20 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT EON , TURN-ON ENERGY LOSS (mJ) 50 20 30 40 ICE , COLLECTOR TO EMITTER CURRENT (A) 60 TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V 5.0 4.0 VGE = 10V or 15V 3.0 2.0 1.0 0 10 20 30 40 50 60 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT HGTG30N60C3 TJ = 150oC, TC = 75oC RG = 3Ω, L = 100µH 100 VGE = 15V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) VGE = 10V RθJC = 0.6oC/W 1 5 10 20 30 40 60 250 TJ = 150oC, VGE = 15V, L = 100µH 200 150 LIMITED BY CIRCUIT 100 50 0 0 ICE, COLLECTOR TO EMITTER CURRENT (A) VCE , COLLECTOR TO EMITTER VOLTAGE (V) FREQUENCY = 400kHz C, CAPACITANCE (pF) CIES 6000 5000 4000 3000 2000 COES 1000 CRES 0 5 10 15 20 400 500 600 25 IG(REF) = 3.54mA, RL = 20Ω, TC = 25oC 15 600 12 480 VCE = 600V 360 9 VCE = 400V 240 6 VCE = 200V 120 3 0 0 40 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 80 120 0 200 160 QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 300 FIGURE 14. SWITCHING SAFE OPERATING AREA 8000 0 200 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 7000 100 FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 0.2 t1 10-1 0.1 PD 0.05 t2 0.02 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 5 101 VGE, GATE TO EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 500 (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTG30N60C3 Test Circuit and Waveforms 90% 10% VGE L = 100µH EOFF RHRP3060 90% + RG = 3Ω EON VCE - VDD = 480V ICE 10% td(OFF)I trI tfI td(ON)I FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2, whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener Diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I + td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 19. Device turnoff delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 6 ECCOSORBD is a Trademark of Emerson and Cumming, Inc.