HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBTs January 1997 Features Packaging • 14A, 600V at TC = 25oC • • • • JEDEC TO-220AB EMITTER 600V Switching SOA Capability Typical Fall Time . . . . . . . . . . . . . . 140ns at TJ = 150oC Short Circuit Rating Low Conduction Loss COLLECTOR GATE COLLECTOR (FLANGE) Description JEDEC TO-251AA The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. GATE COLLECTOR (FLANGE) JEDEC TO-252AA The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER PACKAGE TO-251AA G7N60C HGTD7N60C3S TO-252AA G7N60C HGTP7N60C3 TO-220AB G7N60C3 COLLECTOR (FLANGE) GATE EMITTER Terminal Diagram BRAND HGTD7N60C3 COLLECTOR EMITTER N-CHANNEL ENHANCEMENT MODE C NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-252AA variant in tape and reel, i.e. HGTD7N60C3S9A. G Formerly Developmental Type TA49115. Absolute Maximum Ratings E TC = 25oC, Unless Otherwise Specified HGTD7N60C3, HGTD7N60C3S HGTP7N60C3 Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES 600 Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 14 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 7 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ICM 56 Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 Switching Safe Operating Area at TJ = 150oC, Figure 14 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 40A at 480V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 60 Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.48 Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV 100 Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 1 Short Circuit Withstand Time (Note 2) at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 8 NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RGE = 50Ω. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD handling procedures. Copyright © Harris Corporation 1997 3-16 UNITS V A A A V V W W/oC mJ oC oC µs µs File Number 4141.2 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter-Collector Breakdown Voltage BVECS IC = 3mA, VGE = 0V 16 30 - V Collector-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage ICES VCE(SAT) VCE = BVCES TC = 25oC - - 250 µA VCE = BVCES TC = 150oC - - 2.0 mA IC = IC110, VGE = 15V TC = 25oC - 1.6 2.0 V TC = 150oC - 1.9 2.4 V TC = 25oC 3.0 5.0 6.0 V - - ±250 nA VCE(PK) = 480V 40 - - A VCE(PK) = 600V 6 - - A IC = IC110, VCE = 0.5 BVCES - 8 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 23 30 nC VGE = 20V - 30 38 nC - 8.5 - ns - 11.5 - ns - 350 400 ns - 140 275 ns VGE(TH) IC = 250µA, VCE = VGE IGES VGE = ±25V SSOA TJ = 150oC RG = 50Ω VGE = 15V L = 1mH Gate-Emitter Leakage Current Switching SOA Gate-Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) Current Turn-On Delay Time tD(ON)I Current Rise Time tRI Current Turn-Off Delay Time tD(OFF)I TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG= 50Ω L = 1.0mH Current Fall Time tFI Turn-On Energy EON - 165 - µJ Turn-Off Energy (Note 3) EOFF - 600 - µJ Thermal Resistance RθJC - - 2.1 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The HGTD7N60C3, HGTD7N60C3S and HGTP7N60C3 were tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,567,641 4,587,713 4,598,461 4,605,948 4,618,872 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 3-17 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC ICE, COLLECTOR-EMITTER CURRENT (A) DUTY CYCLE <0.5%, VCE = 10V 35 PULSE DURATION = 250µs 30 25 TC = 150oC 20 TC = 25oC 15 TC = -40oC 10 5 0 4 6 8 10 12 VGE, GATE-TO-EMITTER VOLTAGE (V) 40 VGE = 15.0V 30 10.0V 25 20 9.0V 15 8.5V 10 8.0V 7.5V 5 7.0V 0 0 14 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) PULSE DURATION = 250µs 35 DUTY CYCLE <0.5%, VGE = 10V 30 TC = -40oC 20 TC = 150oC 10 TC = 25oC 5 0 0 1 2 3 4 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 6 3 75 100 125 TC , CASE TEMPERATURE (oC) 10 PULSE DURATION = 250µs DUTY CYCLE <0.5%, VGE = 15V 35 TC = 25oC TC = -40oC 30 25 20 TC = 150oC 15 10 5 0 150 tSC , SHORT CIRCUIT WITHSTAND TIME (µS) ICE , DC COLLECTOR CURRENT (A) 9 50 8 0 1 2 3 4 5 FIGURE 4. COLLECTOR-EMITTER ON - STATE VOLTAGE VGE = 15V 25 6 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 12 0 40 5 FIGURE 3. COLLECTOR-EMITTER ON - STATE VOLTAGE 15 4 FIGURE 2. SATURATION CHARACTERISTICS 40 15 2 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1. TRANSFER CHARACTERISTICS 25 12.0V 35 FIGURE 5. MAXIMUM DC COLLECTOR CURRENT AS A FUNCTION OF CASE TEMPERATURE 12 140 VCE = 360V, RGE = 50Ω, TJ = 125oC 10 120 ISC 8 100 6 80 4 60 tSC 2 10 11 12 13 14 VGE , GATE-TO-EMITTER VOLTAGE (V) 40 15 FIGURE 6. SHORT CIRCUIT WITHSTAND TIME 3-18 ISC, PEAK SHORT CIRCUIT CURRENT(A) ICE, COLLECTOR-EMITTER CURRENT (A) 40 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Typical Performance Curves 500 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 40 tD(OFF)I , TURN-OFF DELAY TIME (ns) tD(ON)I , TURN-ON DELAY TIME (ns) 50 (Continued) 30 20 VGE = 10V VGE = 15V 10 5 2 8 5 11 14 17 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 450 400 350 VGE = 10V OR 15V 300 250 200 20 2 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 7. TURN-ON DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 300 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V VGE = 15V 200 VGE = 10V or 15V 150 10 5 2 5 8 11 14 17 ICE , COLLECTOR-EMITTER CURRENT (A) 2000 100 20 FIGURE 9. TURN-ON RISE TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3000 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 VGE = 10V 500 VGE = 15V 100 40 2 5 8 11 14 2 17 20 TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 1000 VGE = 10V or 15V 500 100 20 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 11. TURN-ON ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 5 8 11 14 17 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 10. TURN-OFF FALL TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT EOFF , TURN-OFF ENERGY LOSS (µJ) EON , TURN-ON ENERGY LOSS (µJ) TJ = 150oC, RG = 50Ω, L = 1mH, VCE(PK) = 480V 250 VGE = 10V 100 20 FIGURE 8. TURN-OFF DELAY TIME AS A FUNCTION OF COLLECTOR-EMITTER CURRENT tFI , FALL TIME (ns) tRI , TURN-ON RISE TIME (ns) 200 8 11 14 17 5 ICE , COLLECTOR-EMITTER CURRENT (A) 2 17 8 11 5 14 ICE , COLLECTOR-EMITTER CURRENT (A) FIGURE 12. TURN-OFF ENERGY LOSS AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 3-19 20 HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 TJ = 150oC, TC = 75oC RG = 50Ω, L = 1mH 100 VGE = 15V VGE = 10V fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC)/(EON + EOFF) 10 PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RθJC = 2.1oC/W 1 2 10 20 50 TJ = 150oC, VGE = 15V, RG = 50Ω, L = 1mH 40 30 20 10 0 0 30 ICE, COLLECTOR-EMITTER CURRENT (A) VCE , COLLECTOR - EMITTER VOLTAGE (V) C, CAPACITANCE (pF) CIES 800 600 400 200 COES CRES 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 400 500 600 IG REF = 1.044mA, RL = 50Ω, TC = 25oC 600 15 500 12.5 VCE = 600V 400 10 300 7.5 5 200 VCE = 400V VCE = 200V 100 2.5 0 0 5 10 15 20 25 0 30 QG , GATE CHARGE (nC) FIGURE 15. CAPACITANCE AS A FUNCTION OF COLLECTOREMITTER VOLTAGE ZθJC , NORMALIZED THERMAL RESPONSE 300 FIGURE 14. MINIMUM SWITCHING SAFE OPERATING AREA FREQUENCY = 1MHz 1000 200 VCE(PK), COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 13. OPERATING FREQUENCY AS A FUNCTION OF COLLECTOR-EMITTER CURRENT 1200 100 FIGURE 16. GATE CHARGE WAVEFORMS 100 0.5 t1 0.2 PD 0.1 10-1 t2 0.05 0.02 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZθJC X RθJC) + TC 0.01 SINGLE PULSE 10-2 10-5 10-4 10-2 10-1 10-3 t1 , RECTANGULAR PULSE DURATION (s) 100 FIGURE 17. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 3-20 101 VGE, GATE-EMITTER VOLTAGE (V) fMAX , OPERATING FREQUENCY (kHz) 200 (Continued) ICE, COLLECTOR-EMITTER CURRENT (A) Typical Performance Curves HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 Test Circuit and Waveform L = 1mH 90% RHRD660 10% VGE EOFF RG = 50Ω EON VCE + - 90% VDD = 480V ICE 10% tD(OFF)I tRI tFI FIGURE 18. INDUCTIVE SWITCHING TEST CIRCUIT tD(ON)I FIGURE 19. SWITCHING TEST WAVEFORMS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating Frequency Information for a Typical Device Figure 13 is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD LD26” or equivalent. fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on- state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure 19. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate opencircuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJMAX TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 19. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. ECCOSORBD is a Trademark of Emerson and Cumming, Inc. 3-21