Order this document by MRFIC1807/D SEMICONDUCTOR TECHNICAL DATA The MRFIC Line Designed primarily for use in DECT, Japan Personal Handy System (PHS) and other wireless Personal Communication Systems (PCS) applications. The MRFIC1807 includes a single–stage power amplifier and transmit/receive switch in a low–cost SOIC–16 package. The amplifier portion employs a depletion mode power GaAs MESFET and produces up to +27 dBm output with +19 dBm input. On–chip power control circuitry allows bias adjustment for optimum performance. The T/R switch is capable of handling up to +28 dBm through the transmit path without significant increase in insertion loss. The switch is controlled by CMOS logic level signals — no negative control voltage required. The MRFIC1807 is sized to be driven by the MRFIC1806 Driver/ Ramp IC. Together with the rest of the MRFIC1800 GaAs ICs, this family offers the complete transmit and receive functions, less LO and filters, needed for a typical 1.8 GHz cordless telephone. • Usable 1500 – 2200 MHz • 8.0 dB Gain Including Switch • +26 dBm Minimum Output Power at Antenna Port • 1.0 dB Typ RX Path Insertion Loss • Simple Off–Chip Matching for Maximum Flexibility • 3.0 to 5.0 V Supply • No Spurious Outputs for Load VSWR up to 8:1 • CMOS Level Switching Signal for T/R Switch 1.8 GHz POWER AMPLIFIER AND TRANSMIT/RECEIVE SWITCH GaAs MONOLITHIC INTEGRATED CIRCUIT CASE 751B–05 (SO–16) • Order MRFIC1807R2 for Tape and Reel. R2 Suffix = 2,500 Units per 16 mm, 13 inch Reel. • Device Marking = M1807 ANTENNA 1 16 REG VDD GND 2 15 GND TX IN 3 14 RX OUT PA OUT 4 13 VSS GND 5 GND 6 RF IN 7 GND 8 REG VDD GATE BIAS 12 GND 11 GND 10 TX/RX 9 PCNTRL Figure 1. Pin Connection and Functional Block Diagram REV 2 MOTOROLA RF DEVICE DATA Motorola, Inc. 1997 MRFIC1807 1 ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ABSOLUTE MAXIMUM RATINGS (TA = 25°C Unless Otherwise noted) Rating Symbol Limit Unit VDD 6.0 Vdc Supply Voltage REG VDD 4.5 Vdc Supply Voltage VSS – 4.0 Vdc RF Input Power Pin +25 dBm TX/RX 6.0 Vdc PCNTRL 3.0 Vdc TA –10 to +70 °C Storage Temperature Range Tstg – 65 to +150 °C Thermal Resistance, Junction to Case θJC 24 °C/W PA Supply Voltage Switch Control Voltage PA Control Voltage Ambient Operating Temperature ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁ ÁÁÁÁ RECOMMENDED OPERATING RANGES Symbol Value Unit RF Input Frequency Parameter fRF 1.5 to 2.2 GHz PA Supply Voltage VDD 3.0 to 5.0 Vdc Supply Voltage REG VDD 2.9 to 3.1 Vdc Supply Voltage VSS – 2.75 to – 2.25 Vdc RF Input Power PIN +5.0 to +23 dBm Switch Control Voltage, High (TX Mode) TX/RX 2.8 to 3.5 Vdc Switch Control Voltage, Low (RX Mode) TX/RX – 0.2 to 0.2 Vdc ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ PA Control Voltage PCNTRL 0.0 to 2.5 Vdc ELECTRICAL CHARACTERISTICS (1) Transmit Mode (VDD = 3.5 V, REG VDD = 3.0 V, TA = 25°C, VSS = – 2.5 V, PCNTRL 0 V to 2.5 V, PIN = 20 dBm @ 1.9 GHz, TX/RX = 3 V, POUT Measured at ANT Port) Characteristic Min Typ Max Unit Small Signal Gain (PIN = 0 dBm, PCNTRL set for IDDQ = 180 mA) 7.0 8.0 — dB Output Power (PCNTRL adjusted for efficiency ≥ 35%) 26 26.8 — dBm Output 1.0 dB Compression (PCNTRL set for IDDQ = 180 mA) — 25 — dBm Harmonic Output (PCNTRL set for POUT = 26 dBm) — – 40 — dBc Switch RX to TX Switching Time — 0.1 — µsec TX/RX Control Input Current, Pin 10 — 0.2 — mA Drain Efficiency (Pout = 26 dBm) (2) — 40 — % Supply Current, ISS — 0.8 1.2 mA Supply Current, REG IDD — 0.8 1.2 mA PCNTRL Control Input Current (Pin 9) — 15 — µA ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁÁ Leakage Power at RX Port — –1 +6 dBm Unit Receive Mode (VDD = 0 V, REG VDD = 3.0 V, VSS = – 2.5 V, TX/RX = 0 V, TA = 25°C, Freq = 1.9 GHz) Characteristic Min Typ Max ANT to RX Insertion Loss — 1.0 1.3 dB Switch TX to RX Switching Time — 1.0 — µsec Supply Current, REG IDD — 60 250 µA Supply Current, ISS — 60 250 µA NOTES: 1. Measured with circuit configuration shown in Figure 2. 2. Includes switch loss. MRFIC1807 2 MOTOROLA RF DEVICE DATA C5 4.7 pF ANT 50 OHM 1 VDD 3.5 V C5 .01 µF C4 C3 100 pF 22 pF T1 (FR4) Zo = 100 L = 22 mm C2 2.2 pF RF IN 50 OHM C1 2.2 pF ANT REG VDD 2 GND 3 TX IN RX OUT VSS 5 PA OUT GND 6 GND 7 RF IN 4 8 REG VDD 3V 16 C7 22 pF GND 15 REG VDD GATE BIAS MRFIC1807 VSS – 2.5 V 13 RX OUT 50 OHM C6 1.8 pF GND 12 GND 11 3 V (TX) TX/RX GND 14 PCNTRL 10 TX/RX 0 V (RX) 9 T2 (FR4) Zo = 70 L = 2 mm PCNTRL 1 V TYP Figure 2. 1.9 GHz Applications Circuit Configuration Table 1. Small Signal S – Parameters ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁÁ ÁÁÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ ÁÁÁÁÁ ÁÁÁÁ (VDD = 3.5 V, IDDQ = 180 mA, TA = 25°C, no input or output matching) S11 S21 S12 S22 Freq (GHz) Mag Angle Mag Angle Mag Angle Mag Angle 1.5 0.614 –171.5 2.203 82.6 0.104 74.5 0.741 175.4 1.6 0.695 175.7 1.871 71.7 0.110 69.2 0.746 171.5 1.7 0.747 167.3 1.647 63.4 0.108 64.0 0.745 167.4 1.8 0.777 160.3 1.473 56.2 0.106 58.7 0.746 163.0 1.9 0.799 154.2 1.341 49.2 0.120 54.0 0.753 158.9 2.0 0.814 148.3 1.230 43.0 0.118 49.6 0.758 154.8 2.1 0.826 142.5 1.128 36.8 0.114 45.2 0.764 150.6 2.2 0.835 137.0 1.041 31.2 0.120 40.6 0.767 146.7 2.3 0.842 131.4 0.959 26.4 0.127 37.0 0.780 143.4 2.4 0.856 126.6 0.895 21.1 0.124 33.8 0.796 139.8 2.5 0.870 121.7 0.840 16.0 0.126 30.4 0.808 136.4 MOTOROLA RF DEVICE DATA MRFIC1807 3 400 f = 1.9 GHz VDD = 3.5 V IDDQ = 180 mA 25 350 IDD , SUPPLY CURRENT (mA) Pout , OUTPUT POWER (dBm) 30 –10°C 20 70°C 15 TA = 25°C 10 5 –3 0 3 6 9 12 15 PIN, INPUT POWER (dBm) 18 21 25°C 250 200 150 Figure 3. Output Power versus Input Power –10°C TA = 70°C 0 3 6 9 12 15 PIN, INPUT POWER (dBm) 18 21 24 500 5V 450 25 IDD , SUPPLY CURRENT (mA) Pout , OUTPUT POWER (dBm) 25°C Figure 4. Supply Current versus Input Power 30 3.5 V VDD = 3 V 20 15 TA = 25°C f = 1.9 GHz PCNTRL Set For IDDQ = 180 mA @ 3.5 V 10 5 –3 0 3 6 9 12 15 PIN, INPUT POWER (dBm) 18 21 400 350 250 5V 200 3.5 V 100 –3 24 300 IDD , SUPPLY CURRENT (mA) 25 20 PCNTRL = 2 V 15 0V 1V 0 3 6 9 12 15 PIN, INPUT POWER (dBm) 18 21 24 Figure 6. Supply Current versus Input Power 350 5 VDD = 3 V 150 30 10 f = 1.9 GHz TA = 25°C PCNTRL Set For IDDQ = 180 mA @ 3.5 V 300 Figure 5. Output Power versus Input Power Pout , OUTPUT POWER (dBm) –10°C 300 100 –3 24 VDD = 3.5 V f = 1.9 GHz IDDQ = 180 mA VDD = 3.5 V f = 1.9 GHz TA = 25°C 2V 250 200 150 1V 100 VDD = 3.5 V TA = 25°C f = 1.9 GHz 50 0 PCNTRL = 0 V –5 –3 0 3 6 9 12 15 PIN, INPUT POWER (dBm) 18 21 Figure 7. Output Power versus Input Power MRFIC1807 4 24 0 –3 0 3 6 9 12 15 PIN, INPUT POWER (dBm) 18 21 24 Figure 8. Supply Current versus Input Power MOTOROLA RF DEVICE DATA 350 27.5 70°C 300 TA = 25°C 275 250 225 Pin = 20 dBm VDD = 3.5 V IDDQ = 180 mA 200 175 150 1.5 1.7 1.6 –10°C 27 –10°C Pout , OUTPUT POWER (dBm) IDD , SUPPLY CURRENT (mA) 325 26.5 26 70°C 25.5 70°C 25 24.5 Pin = 20 dBm VDD = 3.5 V IDDQ = 180 mA 24 1.9 1.8 f, FREQUENCY (GHz) 2 2.1 23.5 1.5 2.2 600 1.7 1.8 1.9 f, FREQUENCY (GHz) 2 2.1 2.2 10 VDD = 3.5 V 400 70°C 300 TA = 25°C 200 –10°C 9 500 –10°C 100 8 TA = 25°C 7 5 Pin = 0 dBm VDD = 3.5 V IDDQ = 180 mA 4 0 0.5 1 1.5 PCNTRL (VOLTS) 3 2.5 2 1.5 1.6 1.7 1.8 1.9 f, FREQUENCY (GHz) 2 2.1 2.2 Figure 12. Small Signal Gain versus Frequency 1.5 3 –10°C 2 Pout = 26 dBm VDD = 3.5 V IDDQ = 180 mA TA = 25°C TA = 25°C REG VDD = 3 V TX/RX = 0 V 1.4 INSERTION LOSS (dB) 1 0 70°C 6 Figure 11. Quiescent Supply Current versus PCNTRL LEAKAGE POWER (dBm) 1.6 Figure 10. Output Power versus Frequency SMALL SIGNAL GAIN (dBm) I DDQ , QUIESCENT SUPPLY CURRENT (mA) Figure 9. Supply Current versus Frequency 0 TA = 25°C 70°C –1 –2 1.3 1.2 1.1 –3 –4 1.5 1.6 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 Figure 13. Leakage Power at RX Port in TX Mode versus Frequency MOTOROLA RF DEVICE DATA 2.2 1 1.5 1.6 1.7 1.8 1.9 FREQUENCY (GHz) 2 2.1 2.2 Figure 14. RX Path Insertion Loss in RX Mode versus Frequency MRFIC1807 5 27.5 f = 1.9 GHz VDD = 3.5 V Pin = 20 dBm 400 27.4 375 Pout , OUTPUT POWER (dBm) IDD , SUPPLY CURRENT (mA) 425 70°C 350 325 –10°C 300 275 TA = 25°C 0 0.5 27.3 –10°C 27.2 27.1 25°C 27.0 26.9 TA = 70°C 26.8 f = 1.9 GHz VDD = 3.5 V Pin = 20 dBm 26.7 26.6 1 1.5 PCNTRL (VOLTS) 2 2.5 26.5 0 Figure 15. Supply Current versus PCNTRL 0.5 1 1.5 PCNTRL (VOLTS) 2.5 Figure 16. Output Power versus PCNTRL – 40 28 Pout , OUTPUT POWER (dBm) 2 VDD = 3.5 V f = 1.9 GHz Mod = 384 kb / s π / 4 DQPSK TA = 25°C IDDQ = 180 mA 26 24 Pout – 45 – 50 600 kHz OFFSET – 55 22 20 – 60 900 kHz OFFSET 18 – 65 16 10 12 14 16 18 PIN, INPUT POWER (dBm) 20 – 70 22 Figure 17. Output Power and Adjacent Channel Power Ratio versus Input Power MRFIC1807 6 MOTOROLA RF DEVICE DATA DESIGN AND APPLICATIONS INFORMATION DESIGN PHILOSOPHY The MRFIC1807 is designed to operate with the MRFIC1806 Driver/Ramp IC in 1.9 GHz Personal Communication System (PCS) applications such as Europe’s DECT and Japan’s PHS. The design incorporates a depletion mode GaAs power MESFET with a high–power transmit/receive switch and associated bias circuitry in one low–cost SOIC–16 package. The power MESFET is sized to produce at least 27 dBm saturated output power, including switch loss, from a 3.5 V supply, but the output power can be controlled using the PCNTRL input. This control voltage also allows setting of the quiescent current of the FET. PCNTRL can be set to give best efficiency or linearity for the particular system application. The TX/RX control pin allows fast switching of the T/R switch for TDMA applications. When switching from transmit to receive, the battery supply voltage should be removed from the PA (Pin 4), to avoid excessive current drain. This is usually accomplished using an external pass transistor controlled by the TX/RX signal. Alternatively, if PCNTRL is reduced to 0 V during RX mode, the bias current is reduced to nearly zero. The Transmit/Receive switch is a reflective MESFET design which is optimized for low loss and power handling in transmit mode. The design can handle 28 dBm of transmit power without significant increase in insertion loss. A regulated 3.0 Volt supply is required at pin 16 for the T/R switch and the bias and control circuitry. DECT APPLICATIONS Figure 2 shows the component values for a DECT implementation of the MRFIC1807. For use in equipment designed for DECT, the power amplifier is operated close to saturation to improve device efficiency. Maximum power output at the antenna connector is 24 dBm during a burst. The constant envelope characteristics of the GMSK modulation allow non–linear amplification without spectral regrowth. The transmit signal must be shaped or “ramped” to meet system transmit turn on time requirements of 10 msec minimum while not splattering into adjacent channels. A turn on time on greater than MOTOROLA RF DEVICE DATA 2.0 msec has been shown to give adequate adjacent channel power performance. Most DECT realizations have the modulation applied to the transmit VCO so the most straight forward way of implementing this ramping function is at the power amplifier. The MRFIC1806 Driver/Ramp IC has an on–chip ramping circuit specifically designed for DECT. When ramped in this manner, the MRFIC1806 will supply the appropriately ramped RF signal to the MRFIC1807 which only has to be turned on and off with TX/RX. Alternate off– chip ramping can be implemented either with external components or at baseband. Consult the MRFIC1806 datasheet for more information. PHS APPLICATIONS For Japan’s Personal Handy System applications, the modulation is p/4 DQPSK. When amplified with a non–linear amplifier, the signal will regrow the sidebands which have been carefully filtered at baseband, resulting in adjacent channel interference. To avoid this spectral regrowth, the amplifier must be operated “backed off” from saturation. The amount of backoff required has been shown to be a function of amplifier saturated output capability and may be as high as 5.0 dB. The PHS specification calls for a maximum average power during a burst to be 19 dBm. This is consistent with 5.0 dB backoff from the DECT operating point so the same DECT operating condition could be used. Alternatively, PCNTRL can be adjusted for a lower bias point to improve efficiency or higher bias for better linearity. With p/4 DQPSK modulation, ramping can be accomplished in the encoder so no external ramp circuit is needed. See the MRFIC1806 data sheet for further details. EVALUATION BOARDS Evaluation boards are available for RF Monolithic Integrated Circuits by adding a “TF” suffix to the device type. For a complete list of currently available boards and ones in development for newly introduced product, please contact your local Motorola Distributor or Sales Office. MRFIC1807 7 PACKAGE DIMENSIONS –A– 16 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 9 –B– 1 P 8 PL 0.25 (0.010) 8 M B S G R K F X 45 _ C –T– SEATING PLANE J M D 16 PL 0.25 (0.010) M T B S A S DIM A B C D F G J K M P R MILLIMETERS MIN MAX 9.80 10.00 3.80 4.00 1.35 1.75 0.35 0.49 0.40 1.25 1.27 BSC 0.19 0.25 0.10 0.25 0_ 7_ 5.80 6.20 0.25 0.50 INCHES MIN MAX 0.386 0.393 0.150 0.157 0.054 0.068 0.014 0.019 0.016 0.049 0.050 BSC 0.008 0.009 0.004 0.009 0_ 7_ 0.229 0.244 0.010 0.019 CASE 751B–05 ISSUE J Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4–32–1, Nishi–Gotanda, Shinagawa–ku, Tokyo 141, Japan. 81–3–5487–8488 Mfax: [email protected] – TOUCHTONE 602–244–6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, – US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 INTERNET: http://motorola.com/sps MRFIC1807 8 ◊ MRFIC1807/D MOTOROLA RF DEVICE DATA