Transistor 2SC3704 Silicon NPN epitaxial planer type For UHF band low-noise amplification Unit: mm +0.2 2.8 –0.3 (Ta=25˚C) Ratings Unit Collector to base voltage VCBO 15 V Collector to emitter voltage VCEO 10 V Emitter to base voltage VEBO 2 V Collector current IC 80 mA Collector power dissipation PC 200 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C +0.1 +0.1 0.16 –0.06 JEDEC:TO–236 EIAJ:SC–59 Mini Type Package Marking symbol :2W (Ta=25˚C) Symbol Conditions min Collector cutoff current ICBO Emitter cutoff current IEBO VEB = 1V, IC = 0 hFE1 VCE = 8V, IC = 20mA 50 80 Forward current transfer ratio 1.45 0.95 1:Bae 2:Emitter 3:Collector 0 to 0.1 Symbol Parameter 3 0.1 to 0.3 0.4±0.2 Parameter ■ Electrical Characteristics 0.95 1.9±0.2 1.1 –0.1 ■ Absolute Maximum Ratings 1 2 +0.2 ● 0.65±0.15 0.8 ● +0.2 ● 0.65±0.15 Low noise figure NF. High gain. High transition frequency fT. Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. 2.9 –0.05 ● 0.4 –0.05 ■ Features +0.25 1.5 –0.05 typ VCB = 15V, IE = 0 150 max Unit 1 µA 1 µA 300 hFE2 VCE = 1V, IC = 3mA Transition frequency fT VCE = 8V, IC = 20mA, f = 0.8GHz Collector output capacitance Cob VCE = 10V, IE = 0, f = 1MHz 0.7 1.2 pF Noise figure NF VCE = 8V, IC = 7mA, f = 800MHz 1.0 1.7 dB Maximum unilateral power gain GUM VCE = 8V, IC = 20mA, f = 800MHz 14 dB Foward transfer gain | S21e |2 VCE = 8V, IC = 20mA, f = 800MHz 13 dB 280 6 GHz 1 2SC3704 Transistor PC — Ta IC — VCE 120 IB=400µA 50 160 120 80 40 40 250µA 200µA 30 150µA 20 100µA 60 80 100 120 140 160 2 10 3 1 0.3 Ta=75˚C, 25˚C, –25˚C 0.1 0.03 0.3 1 3 10 30 0.4 10 0.4 30 100 Collector to base voltage VCB (V) 0.8 1.2 Ta=75˚C 300 25˚C 200 –25˚C 100 1 3 10 24 30 VCE=8V f=800MHz Ta=25˚C 10 8 6 4 2 0 0.1 100 0.3 1 3 10 30 100 Collector current IC (mA) NF — IC 6 VCE=8V f=800MHz Ta=25˚C 20 16 12 8 4 0 0.1 2.0 fT — IC 400 0.3 1.6 Base to emitter voltage VBE (V) VCE=8V (Rg=50W) f=800MHz Ta=25˚C 5 Noise figure NF (dB) Maximum unilateral power gain GUM (dB) 0.8 3 0 GUM — IC 1.2 1 12 Collector current IC (mA) IE=0 f=1MHz Ta=25˚C 0.3 10 500 0 0.1 100 1.6 0 0.1 8 12 Cob — VCB 2.0 6 VCE=8V Collector current IC (mA) 2.4 4 600 Forward current transfer ratio hFE 30 0.01 0.1 40 hFE — IC IC/IB=10 –25˚C 60 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 Ta=75˚C 0 0 Transition frequency fT (GHz) 40 25˚C 80 20 50µA 0 20 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) 100 300µA 10 0 Collector output capacitance Cob (pF) VCE=8V Ta=25˚C 350µA Collector current IC (mA) 200 0 2 IC — VBE 60 Collector current IC (mA) Collector power dissipation PC (mW) 240 4 3 2 1 0.3 1 3 10 30 Collector current IC (mA) 100 0 0.1 0.3 1 3 10 30 Collector current IC (mA) 100