Power Transistors 2SD2375 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio Unit: mm ■ Features ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 80 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 6 V Peak collector current ICP 6 A Collector current IC 3 A Base current IB 1 A Collector power TC=25°C dissipation Ta=25°C 25 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 3.0±0.5 φ3.2±0.1 1.4±0.2 0.8±0.1 1 2 150 ˚C –55 to +150 ˚C 2.54±0.3 3 5.08±0.5 (TC=25˚C) Conditions min typ max Unit ICBO VCB = 80V, IE = 0 100 µA ICEO VCE = 40V, IB = 0 100 µA 100 µA IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 25mA, IB = 0 60 Forward current transfer ratio hFE * VCE = 4V, IC = 0.5A 500 Collector to emitter saturation voltage VCE(sat) IC = 2A, IB = 0.05A Transition frequency fT VCE = 12V, IC = 0.2A, f = 10MHz FE 0.55±0.15 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package Emitter cutoff current *h 2.6±0.1 1.6±0.2 W 2 Symbol Collector cutoff current 2.9±0.2 15.0±0.5 ● 4.6±0.2 9.9±0.3 High forward current transfer ratio hFE which has satisfactory linearity Full-pack package which can be installed to the heat sink with one screw 13.7±0.2 4.2±0.2 ● V 1500 1 50 V MHz Rank classification Rank hFE Q P 500 to 1000 800 to 1500 Note: Ordering can be made by the common rank (PQ rank hFE = 500 to 1500) in the rank classification. 1 Power Transistors 2SD2375 PC — Ta IC — VCE 5 IB=1.0mA TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2W) 32 28 (1) 24 20 16 12 8 0.8 0.8mA 0.7mA 0.6mA 0.6 0.5mA 0.4mA 0.4 0.3mA 0.2mA 0.2 4 (2) 20 40 60 80 100 120 140 160 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) hFE — IC 10 1 0.3 0.1 0.03 0.01 0.01 0.03 0.1 0.3 1 3 VCE=4V TC=25˚C 3000 300 100 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) t=1ms 10ms IC 1 DC 0.3 0.1 0.03 0.01 3 10 30 100 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 I CP (1) Without heat sink (2) With a 100 × 80 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 1.2 100 0.1 0.01 0.03 10 103 Non repetitive pulse TC=25˚C 1.0 VCE=12V f=10MHz TC=25˚C 300 Collector current IC (A) 100 30 0.8 0.3 1 0.01 0.03 10 0.6 fT — IC 1000 3 0.4 1000 Transition frequency fT (MHz) Forward current transfer ratio hFE IC/IB=40 TC=25˚C 30 0.2 Base to emitter voltage VBE (V) 10000 Collector current IC (A) Collector current IC (A) 2 0 0 VCE(sat) — IC 100 1 3 0.1mA Ambient temperature Ta (˚C) 3 4 1 0 0 2 VCE=5V TC=25˚C 0.9mA Collector current IC (A) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 1.0 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10