Power Transistors 2SD2374, 2SD2374A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1548 and 2SB1548A Unit: mm ■ Features ■ Absolute Maximum Ratings Parameter (TC=25˚C) Symbol Collector to 2SD2374 base voltage 2SD2374A Collector to 2SD2374 Ratings 60 VCBO 60 VCEO emitter voltage 2SD2374A VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A dissipation 25 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 150 ˚C –55 to +150 ˚C Symbol 2SD2374 current 2SD2374A Emitter cutoff 2SD2374 current 2SD2374A 0.8±0.1 2 2.54±0.3 3 5.08±0.5 1:Base 2:Collector 3:Emitter TO–220D Full Pack Package ICES ICEO Conditions min max 200 VCE = 80V, VBE = 0 200 VCE = 30V, IB = 0 300 VCE = 60V, IB = 0 300 IEBO VEB = 6V, IC = 0 Collector to emitter voltage VCEO IC = 30mA, IB = 0 60 * hFE1 typ VCE = 60V, VBE = 0 Emitter cutoff current Forward current transfer ratio 0.55±0.15 (TC=25˚C) Parameter Collector cutoff 2.6±0.1 1.6±0.2 W 2 ■ Electrical Characteristics 1.4±0.2 1 Emitter to base voltage Collector power TC=25°C φ3.2±0.1 V 80 2.9±0.2 Unit V 80 4.6±0.2 9.9±0.3 3.0±0.5 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 15.0±0.5 ● 13.7±0.2 4.2±0.2 ● 1 VCE = 4V, IC = 1A 70 hFE2 VCE = 4V, IC = 3A 10 Unit µA µA mA V 250 Base to emitter voltage VBE VCE = 4V, IC = 3A 1.8 V Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A 1.2 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf *h FE1 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V 30 MHz 0.5 µs 2.5 µs 0.4 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 1 Power Transistors 2SD2374, 2SD2374A PC — Ta IC — VCE 8 7 5 28 (1) 24 20 16 12 8 IB=100mA 90mA 80mA 70mA 50mA 40mA 30mA 60mA 4 3 20mA 10mA 2 6 5 4 3 2 1 1 4 (2) 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 0 Collector to emitter voltage VCE (V) VCE(sat) — IC hFE — IC 1 0.1 0.03 0.01 0.003 0.001 0.01 0.03 0.1 0.3 1 3 VCE=4V TC=25˚C 3000 300 100 30 10 3 0.1 0.3 1 3 Area of safe operation (ASO) ICP t=1ms 3 IC 10ms 1s 1 0.3 0.01 1 3 10 30 2SD2374A 2SD2374 0.1 0.03 100 300 Collector to emitter voltage VCE 30 10 3 1 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10 (1) Without heat sink (2) With a 100 × 80 × 2mm Al heat sink 102 Ta=25˚C (1) (2) 10 1 10–1 10–2 10–4 1.2 100 0.1 0.01 0.03 10 103 Non repetitive pulse TC=25˚C 1.0 VCE=10V f=10MHz TC=25˚C 300 Collector current IC (A) 100 30 0.8 0.3 1 0.01 0.03 10 0.6 fT — IC 1000 0.3 0.4 1000 Transition frequency fT (MHz) Forward current transfer ratio hFE IC/IB=8 TC=25˚C 3 0.2 Base to emitter voltage VBE (V) 10000 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) 32 0 2 VCE=4V TC=25˚C TC=25˚C (1) TC=Ta (2) Without heat sink (PC=2W) 36 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 6 Collector current IC (A) Collector power dissipation PC (W) 40 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10