Power Transistors 2SD1272 Silicon NPN triple diffusion planar type For high-speed switching and high current amplification ratio Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 150 V Emitter to base voltage VEBO 6 V 4.2±0.2 7.5±0.2 16.7±0.3 φ3.1±0.1 1.4±0.1 0.8±0.1 ICP 2.5 A Collector current IC 1 A Base current IB 0.1 A Collector power TC=25°C dissipation Ta=25°C 40 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 Peak collector current 2.7±0.2 4.0 ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 Solder Dip ■ Features ● 10.0±0.2 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 200V, IE = 0 100 µA Emitter cutoff current IEBO VEB = 6V, IC = 0 100 µA Collector to emitter voltage VCEO IC = 25mA, IB = 0 150 Forward current transfer ratio hFE* VCE = 4V, IC = 0.2A 500 Collector to emitter saturation voltage VCE(sat) IC = 0.5A, IB = 0.02A Transition frequency fT VCE = 4V, IC = 0.1A, f = 10MHz *h FE V 2000 1 25 V MHz Rank classification Rank hFE Q P 500 to 1200 800 to 2000 1 Power Transistors 2SD1272 PC — Ta IC — VCE VCE(sat) — IC (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) (1) 40 30 20 (2) 10 Collector to emitter saturation voltage VCE(sat) (V) 0.5 TC=25˚C Collector current IC (A) Collector power dissipation PC (W) 50 IB=400µA 0.4 350µA 300µA 0.3 250µA 200µA 0.2 150µA 100µA 0.1 50µA (3) (4) 0 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 6 8 10 12 –25˚C 0.3 0.1 0.03 0.3 1 3000 300 100 30 10 3 Collector current IC (A) 10 ICP t=1ms DC 0.3 0.1 0.03 0.01 1 3 10 30 100 300 Collector to emitter voltage VCE 2 1 1000 (V) 3 VCE=4V f=10MHz TC=25˚C 100 30 10 0.1 0.3 1 3 1 0.01 0.03 10 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 10ms 0.3 300 Collector current IC (A) 102 IC 0.1 3 Area of safe operation (ASO) 1 0.03 1000 –25˚C 1 0.01 0.03 3 100 3 0.01 0.01 3000 TC=100˚C 25˚C Collector current IC (A) 30 0.03 fT — IC Transition frequency fT (MHz) Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 1 0.1 0.1 10000 1000 TC=100˚C 0.03 –25˚C VCE=4V 25˚C 0.01 0.01 25˚C 0.3 hFE — IC IC/IB=25 3 1 Collector current IC (A) 10000 10 TC=100˚C 3 Collector to emitter voltage VCE (V) VBE(sat) — IC IC/IB=25 10 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10