Power Transistors 2SB1629 Silicon PNP epitaxial planar type For power amplification Unit: mm 4.6±0.2 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –60 V Emitter to base voltage VEBO –6 V Peak collector current ICP –6 A Collector current IC –3 A Base current IB –1 A Collector power TC=25°C dissipation 40 PC Ta=25°C Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package 150 ˚C –55 to +150 ˚C 15.0±0.3 (TC=25˚C) ICBO Collector cutoff current 2.6±0.1 1.2±0.15 1.45±0.15 W 2 Symbol Parameter 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw +0.5 ● 13.7–0.2 ● φ3.2±0.1 3.0±0.2 ■ Features 9.9±0.3 max Unit VCB = –60V, IE = 0 –100 µA Conditions min typ ICEO VEB = –40V, IB = 0 –100 µA Emitter cutoff current IEBO VEB = –6V, IC = 0 –100 µA Collector to emitter voltage VCEO IC = –25mA, IB = 0 –60 Forward current transfer ratio hFE* VCE = –4V, IC = – 0.5A 300 Collector to emitter saturation voltage VCE(sat) IC = –2A, IB = – 0.05A Transition frequency fT VCE = –12V, IC = – 0.2A, f = 10MHz *h FE V 700 –1 30 V MHz Rank classification Rank Q P hFE 300 to 500 400 to 700 1 Power Transistors 2SB1629 PC — Ta IC — VCE 40 (1) 30 20 (4) (2) 10 6 TC=25˚C –5 5 IB=–100mA –80mA –60mA –4 –40mA –3 –20mA –2 –10mA –5mA –1 3 2 25˚C TC=125˚C –25˚C –2mA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –2 –4 –6 –8 –10 –12 VCE=–4V Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C –25˚C – 0.1 – 0.03 –1 –3 25˚C 1000 25˚C –3 – 0.3 TC=100˚C –25˚C 300 100 30 10 – 0.01 – 0.03 – 0.1 – 0.3 –10 Collector current IC (A) Cob — VCB –1 –3 300 30 10 3 3 –10 Area of safe operation (ASO) ICP Pulsed tw=1ms Duty cycle=1% IC/IB=40 (–IB1=IB2) VCC=–50V TC=25˚C 10 3 3 tf 1 ton tstg 0.3 Non repetitive pulse TC=25˚C t=10ms Collector current IC (A) 10 –3 10 30 Switching time ton,tstg,tf (µs) 30 –1 Collector current IC (A) ton, tstg, tf — IC 100 2.0 100 1 – 0.01 – 0.03 – 0.1 – 0.3 –10 100 IE=0 f=1MHz TC=25˚C 1.6 VCE=–12V f=10MHz TC=25˚C Collector current IC (A) 1000 1.2 1000 3000 –10 300 0.8 fT — IC IC/IB=40 –30 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 0.4 Base to emitter voltage VBE (V) hFE — IC 10000 –1 0 Collector to emitter voltage VCE (V) VCE(sat) — IC –100 Collector to emitter saturation voltage VCE(sat) (V) 4 1 (3) 0 Collector output capacitance Cob (pF) VCE=–4V Collector current IC (A) 50 (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 0.1 IC 1ms DC 1 0.3 0.1 0.03 0.03 1 –1 0.01 –3 –10 –30 –100 Collector to base voltage VCB (V) 2 IC — VBE –6 Collector current IC (A) Collector power dissipation PC (W) 60 0 –2 –4 –6 Collector current IC (A) –8 0.01 –1 –3 –10 –30 –100 –300 –1000 Collector to emitter voltage VCE (V) Power Transistors 2SB1629 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 10000 Note: Rth was measured at Ta=25˚C and under natural convection. (1) PT=10V × 0.2A (2W) and without heat sink (2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink 1000 100 (1) (2) 10 1 0.1 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3