BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 93A SOT-23 R2s Q62702-F1086 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 50 Base current IB 6 Total power dissipation Ptot TS ≤ 63 °C Values Unit V mA mW 300 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 290 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFR 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 10 hFE IC = 30 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-12-1996 BFR 93A Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 30 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 4.5 pF - 0.58 0.9 - 0.23 - - 1.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 6 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 5 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2 - f = 1.8 GHz - 3.3 - f = 900 MHz - 13.5 - f = 1.8 GHz - 8.5 - f = 900 MHz - 12 - f = 1.8 GHz - 6.5 - Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 30 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFR 93A SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 8.6752 fA BF = 137.63 - NF = 0.93633 - VAF = 20.011 V IKF = 0.33395 A ISE = 2619.3 fA NE = 1.5466 - BR = 59 - NR = 0.88761 - VAR = 26.834 V IKR = 0.015129 A ISC = 0.70823 fA NC = 1.95 - RB = 7.2326 Ω IRB = 0.043806 mA RBM = 3.4649 Ω RE = 1.0075 Ω RC = 0.13193 Ω CJE = 3.1538 fF VJE = 0.70393 V MJE = 0.5071 - TF = 33.388 ps XTF = 0.28319 - VTF = 0.17765 V ITF = 2.5184 mA PTF = 0 deg CJC = 1039.5 fF VJC = 0.72744 V MJC = 0.34565 - XCJC = 0.21422 - TR = 1.1061 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.75935 - TNOM 300 K LBI = 0.85 nH LBO = 0.51 nH LEI = 0.69 nH LEO = 0.61 nH LCI = 0 nH LCO = 0.49 nH CBE = 73 fF CCB = 84 fF CCE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFR 93A Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 400 mW Ptot 300 TS 250 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-12-1996 BFR 93A Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.5 6.0 pF GHz 10V 2V 1.3 Ccb 5.0 fT 1.2 4.5 1.1 1.0 4.0 0.9 3.5 1V 0.8 3.0 0.7 2.5 0.6 0.5 2.0 0.4 1.5 0.3 0.7V 1.0 0.2 0.5 0.1 0.0 0.0 0 4 8 12 16 V VR 22 0 10 20 30 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 40 mA IC 60 9 10V 10V 5V G dB 5V 3V dB G 2V 3V 7 2V 6 10 5 1V 8 4 1V 3 6 2 0.7V 4 1 0 10 Semiconductor Group 20 30 40 mA IC 60 0 6 10 20 30 40 0.7V mA 60 IC Dec-12-1996 BFR 93A Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter 16 VCE = Parameter, f = 900MHz 32 IC=30mA 8V dBm 5V dB 0.9GHz G IP3 26 0.9GHz 12 28 3V 24 10 22 1.8GHz 2V 20 8 18 1.8GHz 6 16 1V 14 4 12 2 0 2 4 6 8 V 10 0 12 10 20 30 40 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 mA IC 60 30 IC=30mA IC=30mA dB dB G S21 24 22 20 18 16 14 12 10 8 6 10V 4 0 0.0 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 10V 2 -2 0.0 3.5 7 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-12-1996