BFP 181W NPN Silicon RF Transistor 3 For low noise, high-gain broadband amplifier at 4 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 181W RFs Pin Configuration 1=E 2=C 3=E Package 4=B SOT-343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 20 Base current IB 2 Total power dissipation, TS 91 °C 1) Ptot 175 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point RthJS 340 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-12-1999 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 5 mA, VCE = 8 V 2 Oct-12-1999 BFP 181W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 6 8 - Ccb - 0.24 0.4 Cce - 0.27 - Ceb - 0.32 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 10 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 2 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.45 - f = 1.8 GHz - 1.8 - f = 900 MHz - 20 - f = 1.8 GHz - 16.5 - f = 900 MHz - 16.5 - IC = 5 mA, VCE = 8 V - 11.5 - Power gain, maximum stable F) Gms IC = 5 mA, VCE = 8 V, ZS = ZSopt , ZL = ZLopt , |S21e|2 Transducer gain IC = 5 mA, VCE = 8 V, ZS = ZL = 50 , 1G ms = |S21 / S12| 3 Oct-12-1999 BFP 181W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.0010519 fA BF = 96.461 - NF = 0.90617 - VAF = 22.403 V IKF = 0.12146 A ISE = 12.603 fA NE = 1.7631 - BR = 16.504 - NR = 0.87757 - VAR = 5.1127 V IKR = 0.24951 A ISC = 0.01195 fA NC = 1.6528 - RB = 9.9037 IRB = 0.69278 mA RBM = 6.6315 RE = 2.1372 RC = 2.2171 CJE = 1.8168 fF VJE = 0.73155 V MJE = 0.43619 - TF = 17.028 ps XTF = 0.33814 - VTF = 0.12571 V ITF = 1.0549 mA PTF = 0 deg CJC = 319.69 fF VJC = 1.1633 V MJC = 0.30013 - XCJC = 0.082903 - TR = 2.7449 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99768 - TNOM 300 K L BI = 0.43 nH L BO = 0.47 nH L EI = 0.26 nH L EO = 0.12 nH L CI = 0.06 nH L CO = 0.36 nH C BE = 68 fF C CB = 46 fF C CE = 232 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-12-1999 BFP 181W Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 200 mW 160 TS P tot 140 120 100 TA 80 60 40 20 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Oct-12-1999 BFP 181W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 0.5 10 GHz pF 10V 8V 8 fT Ccb 7 0.3 0.2 5V 6 5 3V 4 2V 3 1V 0.1 2 0.7V 1 0.0 0 4 8 12 16 V 0 0 24 2 4 6 8 10 12 VCB 17 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 24 dB 10V 20 dB 3V 18 16 2V G 14 10 3V 12 2V 1V 12 10V 5V 14 16 G 14 mA 10 0.7V 8 8 1V 6 6 2 2 0 0 0.7V 4 4 2 4 6 8 10 12 14 mA 0 0 17 IC 2 4 6 8 10 12 14 mA 17 IC 6 Oct-12-1999 BFP 181W Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz f = Parameter dB 22 IC=5mA dBm 20 18 1.8GHz 16 14 0.9GHz 14 3V 12 10 1.8GHz 12 2V 8 6 10 1V 4 8 2 6 0 4 -2 2 0 0 5V 16 18 G 8V 0.9GHz IP 3 24 -4 2 4 6 V 8 -6 1 12 3 5 7 9 11 13 VCE mA 17 IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 30 24 IC=5mA dB IC =5mA 20 dB S21 G 18 20 16 14 12 10 15 8 2V 6 10V 10 10V 1V 4 0.7V 1V 2 0.7V 5 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Oct-12-1999