BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • fT = 8GHz F = 1.2dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 182 SOT-143 RGs Q62702-F1396 1=C 2=E 3=B 4=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation Ptot TS ≤ 69 °C Values Unit V mA mW 250 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 325 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 12 100 nA - - 100 IEBO µA - - 1 hFE IC = 10 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 50 2 100 200 Dec-12-1996 BFP 182 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 6 pF - 0.27 0.45 - 0.27 - - 0.6 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 8 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 3 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 1.2 - f = 1.8 GHz - 1.9 - - 21.5 - - 15 - f = 900 MHz - 17 - f = 1.8 GHz - 11 - Power gain 1) Gms IC = 10 mA, VCE = 8 V, f = 900 MHz ZS = ZSopt, ZL = ZLopt Power gain 2) Gma IC = 10 mA, VCE = 8 V, f = 1.8 GHz ZS = ZSopt, ZL = ZLopt Transducer gain |S21e|2 IC = 10 mA, VCE = 8 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFP 182 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.8499 fA BF = 84.113 - NF = 0.56639 - VAF = 21.742 V IKF = 0.14414 A ISE = 8.4254 fA NE = 0.91624 - BR = 10.004 - NR = 0.54818 - VAR = 2.2595 V IKR = 0.039478 A ISC = 5.9438 fA NC = 0.5641 - RB = 2.8263 Ω IRB = 0.071955 mA RBM = 3.4217 Ω RE = 2.1858 Ω RC = 1.8159 Ω CJE = 8.8619 fF VJE = 1.0378 V MJE = 0.40796 - TF = 22.72 ps XTF = 0.43147 - VTF = 0.34608 V ITF = 6.5523 mA PTF = 0 deg CJC = 490.25 fF VJC = 1.0132 V MJC = 0.31068 - XCJC = 0.19281 - TR = 1.7541 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.64175 - TNOM 300 K LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.15 nH LCI = 0 nH LCO = 0.42 nH CBE = 189 fF CCB = 15 fF CCE = 187 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFP 182 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot TS 200 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 Ptotmax/P totDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-12-1996 BFP 182 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.50 10 pF GHz Ccb 0.40 fT 10V 8 5V 0.35 7 0.30 6 0.25 5 0.20 4 0.15 3 0.10 2 0.05 1 3V 2V 1V 0.7V 0.00 0 0 4 8 12 16 V VR 22 0 5 10 15 25 IC Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 23 16 21 10V 8V 5V 20 3V dB G mA dB 10V 14 13 19 2V 12 2V 18 3V G 11 17 10 16 9 15 8 14 1V 1V 13 7 6 12 5 11 10 0 0.7V 5 10 15 mA 25 0 IC Semiconductor Group 0.7V 4 5 10 15 mA 25 IC 6 Dec-12-1996 BFP 182 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 24 28 IC=10mA dBm dB G 0.9GHz 8V 24 IP 3 20 5V 22 20 18 3V 18 0.9GHz 2V 16 16 14 1.8GHz 14 12 1V 10 12 1.8GHz 8 10 6 4 8 2 0 6 0 2 4 6 8 V 12 0 5 10 15 mA V CE 25 IC Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 35 30 IC=10mA IC=10mA dB dB G S21 25 20 20 15 15 10 10V 10 10V 2V 1V 0.7V 5 1V 0.7V 5 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 0 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-12-1996