BFR106 NPN Silicon RF Transistor 3 For low noise, high-gain amplifiers For linear broadband amplifiers Special application: antenna amplifiers Complementary type: BFR194 (PNP) 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFR106 R7s Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 Base current IB 12 Total power dissipation, TS 73 °C 1) Ptot 700 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point2) RthJS 110 K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Jun-27-2001 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 15 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 10 µA hFE 40 100 220 - DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V 2 Jun-27-2001 BFR106 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 3.5 5 - Ccb - 0.95 1.5 Cce - 0.25 - Ceb - 4.4 - AC characteristics (verified by random sampling) Transition frequency fT GHz IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure F dB IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 2.5 - f = 1.8 GHz - 4 - IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz - 12.5 - f = 1.8 GHz - 7.5 - - 10.5 - - 5 - Power gain, maximum available 1) Gma |S21e|2 Transducer gain IC = 70 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ma = |S21 / S12 | (k-(k2-1)1/2 ) 3 Jun-27-2001 BFR106 SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 1.8998 fA BF = 132.75 - NF = 0.89608 - VAF = 15 V IKF = 0.44125 A ISE = 71.424 fA NE = 1.3235 - BR = 11.407 - NR = 0.91008 - VAR = 4.1613 V IKR = 0.010016 A ISC = 2.0992 fA NC = 1.4602 - RB = 1.2652 IRB = 0.028135 mA RBM = 1.0893 RE = 1.1351 RC = 0.27485 CJE = 5.0933 fF VJE = 0.85909 V MJE = 0.69062 - TF = 35.78 ps XTF = 0.44444 - VTF = 0.10681 V ITF = 62.059 mA PTF = 0 deg CJC = 2327.8 fF VJC = 0.81533 V MJC = 0.46849 - XCJC = 0.14496 - TR = 1.2466 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.92887 - TNOM 300 K L BI = 0.85 nH L BO = 0.51 nH L EI = 0.69 nH L EO = 0.61 nH L CI = 0 nH L CO = 0.43 nH C BE = 73 fF C CB = 84 fF C CE = 165 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Jun-27-2001 BFR106 Total power dissipation Ptot = f (TS ) 800 mW TS P tot 600 500 400 300 200 100 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 Ptotmax / PtotDC 10 3 RthJS K/W 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Jun-27-2001 BFR106 Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 3.2 6.0 GHz pF 5.0 5V 3V 4.5 4.0 fT Ccb 2.4 2.0 2V 3.5 1.6 3.0 2.5 1.2 2.0 0.8 1V 1.5 0.7V 1.0 0.4 0.5 0.0 0 4 8 12 16 V 0.0 0 22 20 40 60 80 mA VCB 120 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 9.0 10V dB dB 5V 3V 7.0 5V 2V 6.0 3V G G 10 8 5.0 2V 4.0 6 3.0 4 1V 2.0 2 1.0 0.7V 1V 0.7V 0 0 20 40 60 80 mA 0.0 0 120 IC 20 40 60 80 mA 120 IC 6 Jun-27-2001 BFR106 Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 14 36 IC=70mA dBm 0.9GHz 8V dB 32 5V 0.9GHz 30 G IP 3 10 28 3V 1.8GHz 8 26 24 6 1.8GHz 22 4 2V 20 18 2 1V 16 0 0 2 4 6 8 V 14 0 12 10 20 30 40 50 60 70 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 45 dB 80 mA 100 40 IC =70mA IC=70mA dB 35 30 S21 G 30 25 25 20 20 15 15 10 10 5 10V 5 1V 0 -5 0.0 0.7V 0 10V 1V 0.7V 0.5 1.0 1.5 2.0 2.5 3.0 GHz -5 0.0 4.0 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Jun-27-2001