BFP 180W NPN Silicon RF Transistor 3 For low-power amplifier in mobile 4 communication systems (pager) at collector currents from 0.2 mA to 2.5 mA f T = 7 GHz F = 2.1 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 180W RDs Pin Configuration 1=E 2=C 3=E Package 4=B SOT-343 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 8 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 4 Base current IB 0.5 Total power dissipation, TS 126°C 1) Ptot 30 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 Value Unit V mA Thermal Resistance Junction - soldering point RthJS 785 K/W 1T is measured on the collector lead at the soldering point to the pcb S 1 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. V(BR)CEO 8 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 30 100 200 DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 1 mA, VCE = 5 V 2 Oct-12-1999 BFP 180W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. fT 5 7 - Ccb - 0.22 0.35 Cce - 0.27 - Ceb - 0.1 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 3 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance pF VCB = 5 V, f = 1 MHz Collector-emitter capacitance VCE = 5 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 1 mA, VCE = 5 V, ZS = ZSopt , f = 900 MHz - 2.1 - f = 1.8 GHz - 2.25 - f = 900 MHz - 15 - f = 1.8 GHz - 11.5 - f = 900 MHz - 9 - f = 1.8 GHz - 7 - Power gain, maximum stable F) Gms IC = 1 mA, VCE = 5 V, ZS = ZSopt , ZL = ZLopt , |S21e|2 Transducer gain IC = 1 mA, VCE = 5 V, ZS = ZL = 50 , 3 Oct-12-1999 BFP 180W SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.18519 fA BF = 94.687 - NF = 1.0236 - VAF = 26.867 V IKF = 0.025252 A ISE = 130.93 fA NE = 1.9818 - BR = 20.325 - NR = 0.93013 - VAR = 3.2134 V IKR = 0.012138 A ISC = 6.1852 fA NC = 1.6195 - RB = 1.4255 IRB = 0.01 mA RBM = 60 RE = 3.7045 RC = 0.56 CJE = 3.2473 fF VJE = 1.1812 V MJE = 0.41827 - TF = 14.866 ps XTF = 0.3062 - VTF = 0.22023 V ITF = 1.0202 mA PTF = 0 deg CJC = 183.69 fF VJC = 1.1812 V MJC = 0.30423 - XCJC = 0.08334 - TR = 2.2648 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.87906 - TNOM 300 K L BI = 0.43 nH L BO = 0.47 nH L EI = 0.26 nH L EO = 0.12 nH L CI = 0.06 nH L CO = - nH C BE = 68 fF C CB = 46 fF C CE = 232 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitentechnik (IMST) 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm 4 Oct-12-1999 BFP 180W Total power dissipation Ptot = f (TA *, TS ) * Package mounted on epoxy 35 mW TS 25 P tot TA 20 15 10 5 0 0 20 40 60 80 100 120 °C 150 TA,TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 1 RthJS Ptotmax / PtotDC 10 3 K/W D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 - 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 2 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Oct-12-1999 BFP 180W Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 0.5 10 GHz pF 10V 8V 8 fT Ccb 7 0.3 5V 6 3V 5 0.2 2V 4 3 0.1 1V 0.7V 2 1 0.0 0 2 4 6 8 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 12 VCB IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 20 dB 18 10V dB 2V 10V 16 14 5V 12 3V 10 2V 10 1V G G 14 12 5.0 0.7V 8 8 6 6 1V 0.7V 4 4 2 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 mA 5.0 IC 5.0 IC 6 Oct-12-1999 BFP 180W Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) |S21|2 = f(VCE):--------- (3rd order, Output, ZS=ZL=50 ) VCE = Parameter, f = 900MHz f = Parameter 18 8 IC=1mA 8V dBm dB 0.9GHz 4 14 3V 2 IP 3 G 10 2V 0 1.8GHz 12 5V -2 -4 0.9GHz 1V -6 8 1.8GHz -8 6 -10 -12 4 -14 2 -16 0 0 2 4 6 V 8 -18 0.0 12 1.0 2.0 3.0 mA 4.0 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 28 dB 6.0 12 IC=1mA IC =1mA 24 dB 22 8 18 G G 20 16 6 14 12 10 10V 8 1V 6 0.7V 10V 2V 4 1V 0.7V 2 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz 0 0.0 3.5 f 0.5 1.0 1.5 2.0 2.5 GHz 3.5 f 7 Oct-12-1999