BFP 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 194 SOT-143 RKs Q62702-F1347 1=C 2=E 3=B 4=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 3 Collector current IC 100 Base current IB 10 Total power dissipation Ptot TS ≤ 77 °C Values Unit V mA mW 700 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 105 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-13-1996 BFP 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-base cutoff current 15 - 100 IEBO µA - - 1 hFE IC = 70 mA, VCE = 8 V Semiconductor Group nA - VEB = 2 V, IC = 0 DC current gain - ICBO VCB = 10 V, IE = 0 Emitter-base cutoff current V 15 2 50 - Dec-13-1996 BFP 194 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 1.4 2 - 0.3 - - 4.4 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 20 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz - 2.8 - f = 1.8 GHz - 4.7 - f = 900 MHz - 12 - f = 1.8 GHz - 7 - f = 900 MHz - 9 - f = 1.8 GHz - 3 - Power gain 2) Gma IC = 70 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 70 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-13-1996 BFP 194 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.574 fA BF = 111.78 - NF = 0.66503 - VAF = 9.1007 V IKF = 0.84785 A ISE = 21.629 fA NE = 0.841 - BR = 92.296 - NR = 0.43618 - VAR = 1.7871 V IKR = 0.012843 A ISC = 0.0078447 fA NC = 1.6 - RB = 0.75304 Ω IRB = 0.061674 mA RBM = 4.1356 Ω RE = 0.15908 Ω RC = 0.10833 Ω CJE = 17.699 fF VJE = 0.84843 V MJE = 0.48212 - TF = 53.11 ps XTF = 0.65766 - VTF = 0.10323 V ITF = 0.010453 mA PTF = 0 deg CJC = 3585.6 fF VJC = 0.71631 V MJC = 0.40003 - XCJC = 0.063742 - TR = 0.97481 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.90755 - TNOM 300 K LBI = 0.84 nH LBO = 0.65 nH LEI = 0.31 nH LEO = 0.14 nH LCI = 0.07 nH LCO = 0.42 nH CBE = 145 fF CCB = 19 fF CCE = 281 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-13-1996 BFP 194 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 800 mW Ptot 600 TS 500 400 TA 300 200 100 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 2 10 3 K/W RthJS Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-13-1996 BFP 194 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 4.0 6.0 GHz pF 10V 5.0 Ccb fT 3.0 8V 4.5 5V 4.0 2.5 3V 3.5 2V 2.0 3.0 2.5 1V 1.5 2.0 0.7V 1.0 1.5 1.0 0.5 0.5 0.0 0.0 0 4 8 12 16 V VR 22 0 20 40 60 80 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 14 mA IC 120 8.0 10V 5V G 10V dB dB G 3V 5V 6.0 10 3V 2V 5.0 8 2V 4.0 1V 6 3.0 0.7V 4 1V 2.0 2 1.0 0 0.7V 0.0 0 20 Semiconductor Group 40 60 80 mA IC 120 6 0 20 40 60 80 mA IC 120 Dec-13-1996 BFP 194 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 40 14 dB IC=70mA 0.9GHz 8V 12 G dBm 3V IP3 11 10 2V 30 0.9GHz 9 8 1.8GHz 7 25 6 1V 5 20 4 1.8GHz 3 15 2 1 0 0 2 4 6 8 V 10 0 12 20 40 60 80 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 30 mA IC 110 28 IC=70mA dB dB IC=70mA 24 G S21 22 22 20 18 18 16 14 14 12 10 10 8 6 6 2 -2 0.0 4 10V 2V 1V 0.7V 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 2 0 -2 0.0 3.5 7 1V 0.7V 0.5 1.0 2V 1.5 10V 2.0 GHz f 3.0 Dec-13-1996