BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems (pager, cordless telephone) at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1.5dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFP 280 SOT-143 REs Q62702-F1378 1=C 2=E 3=B 4=E Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 8 Collector-emitter voltage VCES 10 Collector-base voltage VCBO 10 Emitter-base voltage VEBO 2 Collector current IC 10 Base current IB 1.2 Total power dissipation Ptot TS ≤ 108 °C Values Unit V mA mW 80 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 520 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-11-1996 BFP 280 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 8 100 nA - - 100 IEBO µA - - 1 hFE IC = 3 mA, VCE = 5 V Semiconductor Group - ICBO VEB = 1 V, IC = 0 DC current gain µA - VCB = 8 V, IE = 0 Emitter-base cutoff current - ICES VCE = 10 V, VBE = 0 Collector-base cutoff current V 30 2 100 200 Dec-11-1996 BFP 280 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 6 mA, VCE = 5 V, f = 500 MHz Collector-base capacitance 5 pF - 0.2 0.35 - 0.27 - - 0.3 - Cce VCE = 5 V, f = 1 MHz Emitter-base capacitance 7.5 Ccb VCB = 5 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 1.5 mA, VCE = 5 V, ZS = ZSopt f = 900 MHz - 1.5 - f = 1.8 GHz - 2 - f = 900 MHz - 19 - f = 1.8 GHz - 15 - f = 900 MHz - 15 - f = 1.8 GHz - 11 - Power gain 1) Gms IC = 3 mA, VCE = 5 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 3 mA, VCE = 5 V, ZS =ZL= 50 Ω 1) Gms = |S21/S12| Semiconductor Group 3 Dec-11-1996 BFP 280 SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 6.472 fA BF = 89.888 VAF = 25.609 V IKF = NE = 1.6163 - VAR = 5.6909 NC = - NF = 1.0801 - 0.073457 A ISE = 15.596 fA BR = 20.238 NR = 0.83403 - V IKR = 0.012696 A ISC = 1.409 fA 1.0651 - RB = 15 Ω IRB = 0.031958 mA RBM = 14.999 Ω RE = 2.4518 Ω RC = 6.989 Ω CJE = 36.218 fF VJE = 0.70035 V MJE = 0.69773 - TF = 11.744 ps XTF = 0.21585 - VTF = 0.2035 V ITF = 6.2179 mA PTF = 0 deg CJC = 252.99 fF VJC = 1.1943 V MJC = 0.30017 - XCJC = 0.19188 - TR = 2.3693 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.96275 - TNOM 300 K LBI = 0.89 nH LBO = 0.73 nH LEI = 0.4 nH LEO = 0.15 nH LCI = 0 nH LCO = 0.42 nH CBE = 189 fF CCB = 15 fF CCE = 187 fF - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-11-1996 BFP 280 Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 100 mW Ptot 80 70 TS 60 50 40 TA 30 20 10 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 RthJS 10 2 P totmax/PtotDC - K/W 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 -7 10 10 -6 10 -5 10 Semiconductor Group -4 10 -3 10 -2 -1 10 s 10 tp 0 5 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-11-1996 BFP 280 Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.5 10 10V 8V GHz Ccb pF fT 5V 8 3V 7 0.3 2V 6 5 0.2 4 1V 0.7V 3 0.1 2 0.0 1 0 2 4 6 8 V 12 0 2 4 6 8 mA IC VR Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 22 11 18 10V 2V dB dB G 10V G 3V 18 14 2V 16 12 1V 14 10 1V 0.7V 12 8 0.7V 10 6 8 4 0 2 Semiconductor Group 4 6 8 mA IC 11 0 6 2 4 6 8 mA IC 11 Dec-11-1996 BFP 280 Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 22 20 IC=3mA 8V 5V dB dBm 0.9GHz G 3V IP3 18 12 2V 16 8 1.8GHz 0.9GHz 1V 14 4 12 0 1.8GHz 10 -4 8 -8 6 -12 0 2 4 6 8 V 12 0 2 4 6 8 V CE Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 40 mA IC 11 20 IC=3mA IC=3mA dB dB G S21 30 16 25 14 20 12 15 10 10V 1V 0.7V 10 8 5 0 0.0 10V 6 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 4 0.0 3.5 7 1V 0.7V 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-11-1996