INFINEON BFP280

BFP 280
NPN Silicon RF Transistor
• For low noise, low-power amplifiers in mobile
communication systems (pager, cordless
telephone) at collector currents from 0.2mA to 8mA
• fT = 7,5GHz
F = 1.5dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 280
SOT-143
REs
Q62702-F1378
1=C
2=E
3=B
4=E
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
8
Collector-emitter voltage
VCES
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
2
Collector current
IC
10
Base current
IB
1.2
Total power dissipation
Ptot
TS ≤ 108 °C
Values
Unit
V
mA
mW
80
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 520
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-11-1996
BFP 280
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
8
100
nA
-
-
100
IEBO
µA
-
-
1
hFE
IC = 3 mA, VCE = 5 V
Semiconductor Group
-
ICBO
VEB = 1 V, IC = 0
DC current gain
µA
-
VCB = 8 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 10 V, VBE = 0
Collector-base cutoff current
V
30
2
100
200
Dec-11-1996
BFP 280
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 6 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
5
pF
-
0.2
0.35
-
0.27
-
-
0.3
-
Cce
VCE = 5 V, f = 1 MHz
Emitter-base capacitance
7.5
Ccb
VCB = 5 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 1.5 mA, VCE = 5 V, ZS = ZSopt
f = 900 MHz
-
1.5
-
f = 1.8 GHz
-
2
-
f = 900 MHz
-
19
-
f = 1.8 GHz
-
15
-
f = 900 MHz
-
15
-
f = 1.8 GHz
-
11
-
Power gain
1)
Gms
IC = 3 mA, VCE = 5 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 3 mA, VCE = 5 V, ZS =ZL= 50 Ω
1) Gms = |S21/S12|
Semiconductor Group
3
Dec-11-1996
BFP 280
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
6.472
fA
BF =
89.888
VAF =
25.609
V
IKF =
NE =
1.6163
-
VAR =
5.6909
NC =
-
NF =
1.0801
-
0.073457 A
ISE =
15.596
fA
BR =
20.238
NR =
0.83403
-
V
IKR =
0.012696 A
ISC =
1.409
fA
1.0651
-
RB =
15
Ω
IRB =
0.031958 mA
RBM =
14.999
Ω
RE =
2.4518
Ω
RC =
6.989
Ω
CJE =
36.218
fF
VJE =
0.70035
V
MJE =
0.69773
-
TF =
11.744
ps
XTF =
0.21585
-
VTF =
0.2035
V
ITF =
6.2179
mA
PTF =
0
deg
CJC =
252.99
fF
VJC =
1.1943
V
MJC =
0.30017
-
XCJC =
0.19188
-
TR =
2.3693
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.96275
-
TNOM
300
K
LBI =
0.89
nH
LBO =
0.73
nH
LEI =
0.4
nH
LEO =
0.15
nH
LCI =
0
nH
LCO =
0.42
nH
CBE =
189
fF
CCB =
15
fF
CCE =
187
fF
-
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-11-1996
BFP 280
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
100
mW
Ptot
80
70
TS
60
50
40
TA
30
20
10
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
RthJS
10 2
P totmax/PtotDC
-
K/W
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 1
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
5
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Dec-11-1996
BFP 280
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
0.5
10
10V
8V
GHz
Ccb
pF
fT
5V
8
3V
7
0.3
2V
6
5
0.2
4
1V
0.7V
3
0.1
2
0.0
1
0
2
4
6
8
V
12
0
2
4
6
8
mA
IC
VR
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
22
11
18
10V
2V
dB
dB
G
10V
G
3V
18
14
2V
16
12
1V
14
10
1V
0.7V
12
8
0.7V
10
6
8
4
0
2
Semiconductor Group
4
6
8
mA
IC
11
0
6
2
4
6
8
mA
IC
11
Dec-11-1996
BFP 280
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
22
20
IC=3mA
8V
5V
dB
dBm
0.9GHz
G
3V
IP3
18
12
2V
16
8
1.8GHz
0.9GHz
1V
14
4
12
0
1.8GHz
10
-4
8
-8
6
-12
0
2
4
6
8
V
12
0
2
4
6
8
V CE
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
40
mA
IC
11
20
IC=3mA
IC=3mA
dB
dB
G
S21
30
16
25
14
20
12
15
10
10V
1V
0.7V
10
8
5
0
0.0
10V
6
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz
f
4
0.0
3.5
7
1V
0.7V
0.5
1.0
1.5
2.0
2.5
GHz
f
3.5
Dec-11-1996