DC COMPONENTS CO., LTD. 2SC2001 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose applications. TO-92 Pinning .190(4.83) .170(4.33) 1 = Emitter 2 = Collector 3 = Base o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO 30 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5 V Collector Current IC 700 mA Total Power Dissipation PD 600 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Symbol Min Typ Max Unit Collector-Base Breakdown Volatge Characteristic BVCBO 30 - - V Collector-Emitter Breakdown Voltage BVCEO 25 - - V IC=2mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 5 - - V IE=100µA, IC=0 ICBO - - 0.1 µA VCB=30V, IE=0 Collector Cutoff Current Emitter Cutoff Current (1) Collector-Emitter Saturation Voltage (1) Test Conditions IC=100µA, IE=0 IEBO - - 0.1 µA VEB=5V, IC=0 VCE(sat) - - 0.6 V IC=700mA, IB=70mA VBE(sat) - - 1.2 V IC=700mA, IB=70mA hFE1 90 - 400 - IC=100mA, VCE=1V hFE2 50 - - - IC=700mA, VCE=1V Transition Frequency fT 50 - - MHz Output Capacitance Cob - - 25 pF Base-Emitter Saturation Voltage DC Current Gain(1) (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE1 Rank M L K Range 90~180 135~270 200~400 IC=10mA, VCE=6V VCB=6V, f=1MHz, IE=0