Phototransistors PNZ107F, PNZ108F Silicon NPN Phototransistors Unit : mm PNZ107F ø4.6±0.15 4.5±0.2 For optical control systems Glass window Features 12.7 min. Flat window design which is suited to optical systems Wide directional sensitivity for easy use Fast response : tr = 8 µs (typ.) 2-ø0.45±0.05 Signal mixing capability using base pin (PNZ108F) 2.54±0.25 0 0± 1. TO-18 standard type package 1. 0± 0 3˚ 45± .1 5 .2 2 1 Absolute Maximum Ratings (Ta = 25˚C) Unit Collector to emitter voltage VCEO 20 V * Collector to base voltage VCBO 30 V Emitter to collector voltage VECO 3 V Emitter to base voltage VEBO* 5 V IC 30 mA PC 150 mW Operating ambient temperature Topr –25 to +85 ˚C Storage temperature Tstg –30 to +100 ˚C ø4.6±0.15 Glass window 3-ø0.45±0.05 PNZ108F only 2.54±0.25 3˚ 0± 0. 1 45± 5 .2 0 0± 1. 1. * Collector power dissipation Unit : mm PNZ108F 4.5±0.2 Ratings 12.7 min. Symbol Collector current 1: Emitter 2: Collector ø5.75 max. Parameter 3 2 1 ø5.75 max. 1: Emitter 2: Base 3: Collector 1 PNZ107F, PNZ108F Phototransistors Electro-Optical Characteristics (Ta = 25˚C) Parameter Symbol Conditions min 0.4 Dark current ICEO VCE = 10V Collector photo current ICE(L) VCE = 10V, L = 100 lx*1 0.05 max Unit 2 µA 4 mA Peak sensitivity wavelength λP VCE = 10V 900 nm Acceptance half angle θ Measured from the optical axis to the half power point 40 deg. Rise time tr*2 VCC = 10V, ICE(L) = 5mA 8 µs Fall time tf*2 RL = 100Ω 9 µs Collector saturation voltage ICE(L) = 1mA, L = 1000 lx*1 VCE(sat) 0.3 *1 Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. *2 Switching time measurement circuit Sig.IN VCC Sig.OUT (Output pulse) RL ,,,, ,, 50Ω 90% 10% td tr tf PC — Ta ICE(L) — VCE 120 80 40 0 – 20 0 20 40 60 80 Ambient temperature Ta (˚C ) 100 10 8 500 lx 400 lx 6 300 lx 4 200 lx 2 0 100 lx 0 4 8 12 16 20 50 lx 10 lx 24 Collector to emitter voltage VCE (V) ICE(L) (mA) Ta = 25˚C 1000 lx T = 2856K 900 lx L= 800 lx 700 lx 1500 lx 600 lx Collector photo current ICE(L) (mA) 160 V ICE(L) — L 10 2 12 Collector photo current Collector power dissipation PC (mW) 200 0.6 td : Delay time tr : Rise time (Time required for the collector photo current to increase from 10% to 90% of its final value) tf : Fall time (Time required for the collector photo current to decrease from 90% to 10% of its initial value) (Input pulse) 2 typ VCE = 10V Ta = 25˚C T = 2856K 10 1 10 –1 10 –2 1 10 10 2 Illuminance L (lx) 10 3 Phototransistors PNZ107F, PNZ108F ICEO — Ta ICE(L) — Ta 10 2 10 VCE = 10V L = 100 lx T = 2856K 10 –2 0 20 40 Ambient temperature 60 80 1 10 –1 – 40 100 Ta (˚C ) 10˚ 50 40 30 20 60 40 80 0 200 120 50˚ 60˚ VCC = 10V Ta = 25˚C 800 1000 1200 VCC = 10V Ta = 25˚C 10 4 10 3 10 2 RL = 1kΩ 500Ω 10 10 2 RL = 1kΩ 500Ω 10 100Ω 100Ω 70˚ 80˚ 600 tf — ICE(L) tf (µs) 40˚ 400 Wavelength λ (nm) Ta (˚C ) 10 3 tr (µs) 60 30˚ Rise time 70 40 10 4 S (%) 90 80 tr — ICE(L) 20˚ 100 80 0 Ambient temperature Directivity characteristics 0˚ VCE = 10V Ta = 25˚C 20 Fall time 10 –3 – 20 Relative sensitivity Collector photo current 10 –1 Relative sensitivity ICEO (µA) Dark current 1 S (%) ICE(L) (mA) VCE = 10V 10 Spectral sensitivity characteristics 100 1 1 90˚ 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) 10 –1 10 –2 10 –1 1 Collector photo current 10 10 2 ICE(L) (mA) 3