Silicon Junction FETs (Small Signal) 2SK0662 (2SK662) Silicon N-Channel Junction FET For low-frequency amplification (0.425) unit: mm 0.3+0.1 –0.0 ● High mutual conductance gm ● Low noise type ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 3 0.9±0.1 1 2 0.2±0.1 ■ Features (0.65) (0.65) 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) Symbol Ratings Unit Drain to Source voltage VDSX 30 V Gate to Drain voltage VGDO −30 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation PD 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.1 Parameter 10° 1: Source 2: Drain 3: Gate EIAJ: SC-70 SMini3-G1 Package Marking Symbol (Example): 1O ❘■ Electrical Characteristics (Ta = 25°C) Parameter Symbol IDSS* VDS = 10V, VGS = 0 Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Mutual conductance gm Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * Conditions Drain to Source cut-off current NV min − 0.1 VDS = 10V, ID = 0.5mA, f = 1kHz 4 VDS = 10V, VGS = 0, f = 1kHz 4 VDS = 10V, VGS = 0, f = 1MHz VDS = 30V, ID = 1mA, GV = 80dB Rg = 100kΩ, Function = FLAT typ 0.5 max Unit 12 mA −100 nA −1.5 V mS 14 pF 3.5 pF 60 mV IDSS rank classification Runk P Q R IDSS (mA) 0.5 to 3 2 to 6 4 to 12 Marking Symbol 1OP 1OQ 1OR Note) The part number in the parenthesis shows conventional part number. 251 Silicon Junction FETs (Small Signal) 2SK0662 P D Ta I D V DS 8 9.6 VDS=10V Ta=25˚C 7 200 8.0 160 120 80 6 VGS=0V 5 4 – 0.1V 3 – 0.2V 2 – 0.3V 40 1 3.2 Ta=75˚C 1.6 40 60 80 100 120 140 160 0 2 4 8 10 25˚C gm ID Mutual conductance gm (mS) 16 12 8 IDSS=5mA 4 – 0.2 IDSS=5mA VDS=10V Ta=25˚C 16 12 2mA 8 4 0 0 Gate to source voltage VGS (V) 1 2 3 4 5 6 7 8 Drain current ID (mA) C rss V DS 12 VGS=3V f=1MHz Ta=25˚C Noise figure NF (dB) 3 2 1 VDS=10V ID=5.2mA Ta=25˚C 10 4 8 6 4 Rg=500Ω 2 1kΩ 0 1 3 10 30 Drain to source voltage VDS 100 (V) – 0.2 0 0 10 102 103 104 Frequency f (Hz) VGS=–3V f=1MHz Ta=25˚C 8 6 Ciss 4 Coss 2 0 1 3 10 30 100 Drain to source voltage VDS (V) NF f 5 – 0.4 C iss, C oss V D S 0 – 0.4 – 0.6 10 2mA – 0.6 – 0.8 Gate to source voltage VGS (V) 20 VDS=10V Ta=25˚C 0 – 0.8 0 –1.0 12 Drain to source voltage VDS (V) g m VGS 20 6 Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) 20 Ambient temperature Ta (˚C) Reverse transfer capacitance (Common source) Crss (pF) 4.8 – 0.4V 0 0 252 6.4 –25˚C 0 Mutual conductance gm (mS) Drain current ID (mA) Drain current ID (mA) Allowable power dissipation PD (mW) 240 I D V GS 105 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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