Silicon Junction FETs (Small Signal) 2SK0198 (2SK198) Silicon N-Channel Junction FET For low-frequency amplification Unit: mm 0.40+0.10 –0.05 ■ Features 0.16+0.10 –0.06 0.4±0.2 5˚ 1.50+0.25 –0.05 2.8+0.2 –0.3 3 ● High mutual conductance gm ● Low noise type ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. (0.65) 2 1 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Ratings Unit Drain to Source voltage VDSX Symbol 30 V Gate to Drain voltage VGDO −30 V Drain current ID 20 mA Gate current IG 10 mA Allowable power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 0 to 0.1 Parameter 1.1+0.2 –0.1 ■ Absolute Maximum Ratings (Ta = 25°C) 1.1+0.3 –0.1 10˚ 1: Source 2: Drain 3: Gate JEDEC: TO-236 EIAJ: SC-59 Mini3-G1 Package Marking Symbol (Example): 1O ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current IDSS * Gate to Source leakage current IGSS Gate to Source cut-off voltage VGSC Mutual conductance gm Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * NV Conditions VDS = 10 V, VGS = 0 min typ 0.5 VGS = −30 V, VDS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V, ID = 0.5 mA, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 kHz VDS = 10 V, VGS = 0, f = 1 MHz VDS = 30 V, ID = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT − 0.1 4 13 max Unit 12 mA −100 nA −1.5 V mS 14 pF 3.5 pF 60 mV IDSS rank classification Runk P Q R IDSS (mA) 0.5 to 3 2 to 6 4 to 12 Marking Symbol 1OP 1OQ 1OR Note) The part number in the parenthesis shows conventional part number. Publication date: January 2002 SJF00006BED 1 2SK0198 PD T a ID VDS 9.6 200 8.0 120 80 6 Drain current ID (mA) 160 VGS = 0 V 5 4 − 0.1 V 3 − 0.2 V 2 − 0.3 V 40 1 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (°C) 2 4 gm VGS 6 8 10 −25°C IDSS = 5.0 mA 4 16 12 2.0 mA 8 4 0 0 Gate to source voltage VGS (V) 1 2 Crss VDS 4 5 6 7 8 12 VGS = −3 V f = 1 MHz Ta = 25°C 3 2 1 VDS = 10 V ID = 5.2 mA Ta = 25°C 10 4 8 6 Rg = 500 Ω 4 2 1 kΩ 0 0 10 30 100 Drain to source voltage VDS (V) − 0.2 0 1 10 102 103 Frequency f (Hz) SJF00006BED f = 1 MHz VGS = −3 V Ta = 25°C 8 6 Ciss 4 Coss 2 0 1 3 10 30 100 Drain to source voltage VDS (V) NF f Noise figure NF (dB) Reverse transfer capacitance (Common source) Crss (pF) 3 Drain current ID (mA) 5 − 0.4 Ciss, Coss VDS 0 − 0.2 − 0.6 10 2.0 mA − 0.4 − 0.8 Gate to source voltage VGS (V) Input capacitance (Common source), Output capacitance (Common source) Ciss,Coss (pF) Mutual conductance gm (mS) 12 3 25°C 0 −1.0 12 VDS = 10 V IDSS = 5.0 mA Ta = 25°C 16 1 Ta = 75°C gm ID VDS = 10 V Ta = 25°C − 0.6 3.2 1.6 20 0 − 0.8 4.8 Drain to source voltage VDS (V) 20 8 6.4 − 0.4 V 0 0 2 VDS = 10 V Ta = 25°C 7 0 Mutual conductance gm (mS) ID VGS 8 Drain current ID (mA) Allowable power dissipation PD (mW) 240 105 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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