Silicon Junction FETs (Small Signal) 2SJ0364 (2SJ364) Silicon P-Channel Junction FET For analog switch (0.425) unit: mm 0.3+0.1 –0.0 ■ Features ● Low ON-resistance ● Low-noise characteristics 0.15+0.10 –0.05 2.1±0.1 0.9+0.2 –0.1 5° 1.25±0.10 0.9±0.1 3 (0.65) (0.65) ■ Absolute Maximum Ratings (Ta = 25°C) Symbol 1.3±0.1 Ratings Unit Gate to Drain voltage VGDS 65 V Drain current ID −20 mA Gate current IG −10 mA Allowable power dissipation PD 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 2.0±0.2 10° 0 to 0.1 Parameter 2 0.2±0.1 1 1: Source 2: Drain 3: Gate EIAJ: SC-70 SMini3-G1 Package Marking Symbol (Example): 4M ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current VDS = −10V, VGS = 0 Gate to Source leakage current IGSS VGS = 30V, VDS = 0 Gate to Drain voltage VGDS IG = 10µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = −10V, ID = −10µA Forward transfer admittance | Yfs | VDS = −10V, ID = −1mA, f = 1kHz Drain to Source ON-resistance RDS(on) VDS = −10mV, VGS = 0 Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss * Conditions IDSS* VDS = −10V, VGS = 0, f = 1MHz min typ − 0.2 max Unit −6 mA 10 nA 65 V 1.5 1.8 3.5 V 2.5 mS 300 Ω 12 pF 4 pF IDSS rank classification Runk O P Q R IDSS (mA) − 0.2 to −1 − 0.6 to −1.5 −1 to −3 −2.5 to −6 Marking Symbol 4MO 4MP 4MQ 4MR Note) The part number in the parenthesis shows conventional part number. 239 Silicon Junction FETs (Small Signal) P D Ta I D V DS I D V GS –4.0 –3.0 VDS=–10V Ta=25˚C 175 –3.5 150 –3.0 125 100 75 50 –2.5 VGS=0V –2.0 –1.5 0.2V –1.0 0.4V 0.6V 25 –0.5 0 40 60 80 100 120 140 160 –2 –4 –6 –8 –10 –12 | Y fs | V GS Forward transfer admittance |Yfs| (mS) VDS=–10V f=1kHz Ta=25˚C 3.0 2.5 2.0 1.5 1.0 0.5 12 10 8 6 4 2 0 1.5 1.0 0.5 0 Gate to source voltage VGS (V) 0 –2 –4 –6 –8 2 3 4 5 C iss, C oss, C rss V DS VDS=–10V f=1kHz Ta=25˚C 14 1 Gate to source voltage VGS (V) | Y fs | I D 16 0 2.0 0 Drain to source voltage VDS (V) 4.0 3.5 –1.0 0 0 Ambient temperature Ta (˚C) –1.5 – 0.5 –10 Drain current ID (mA) –12 Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) 20 –2.0 0.8V 0 0 240 Drain current ID (mA) –2.5 Drain current ID (mA) Allowable power dissipation PD (mW) 200 Forward transfer admittance |Yfs| (mS) 2SJ0364 24 f=1MHz VGS=0 Ta=25˚C 20 16 Ciss 12 8 4 Coss Crss 0 –1 –3 –10 –30 –100 Drain to source voltage VDS (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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