PANASONIC 2SJ364

Silicon Junction FETs (Small Signal)
2SJ0364 (2SJ364)
Silicon P-Channel Junction FET
For analog switch
(0.425)
unit: mm
0.3+0.1
–0.0
■ Features
● Low ON-resistance
● Low-noise characteristics
0.15+0.10
–0.05
2.1±0.1
0.9+0.2
–0.1
5°
1.25±0.10
0.9±0.1
3
(0.65) (0.65)
■ Absolute Maximum Ratings (Ta = 25°C)
Symbol
1.3±0.1
Ratings
Unit
Gate to Drain voltage
VGDS
65
V
Drain current
ID
−20
mA
Gate current
IG
−10
mA
Allowable power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to +150
°C
2.0±0.2
10°
0 to 0.1
Parameter
2
0.2±0.1
1
1: Source
2: Drain
3: Gate
EIAJ: SC-70
SMini3-G1 Package
Marking Symbol (Example): 4M
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
VDS = −10V, VGS = 0
Gate to Source leakage current
IGSS
VGS = 30V, VDS = 0
Gate to Drain voltage
VGDS
IG = 10µA, VDS = 0
Gate to Source cut-off voltage
VGSC
VDS = −10V, ID = −10µA
Forward transfer admittance
| Yfs |
VDS = −10V, ID = −1mA, f = 1kHz
Drain to Source ON-resistance
RDS(on)
VDS = −10mV, VGS = 0
Input capacitance (Common Source) Ciss
Reverse transfer capacitance (Common Source) Crss
*
Conditions
IDSS*
VDS = −10V, VGS = 0, f = 1MHz
min
typ
− 0.2
max
Unit
−6
mA
10
nA
65
V
1.5
1.8
3.5
V
2.5
mS
300
Ω
12
pF
4
pF
IDSS rank classification
Runk
O
P
Q
R
IDSS (mA)
− 0.2 to −1
− 0.6 to −1.5
−1 to −3
−2.5 to −6
Marking Symbol
4MO
4MP
4MQ
4MR
Note) The part number in the parenthesis shows conventional part number.
239
Silicon Junction FETs (Small Signal)
P D  Ta
I D  V DS
I D  V GS
–4.0
–3.0
VDS=–10V
Ta=25˚C
175
–3.5
150
–3.0
125
100
75
50
–2.5
VGS=0V
–2.0
–1.5
0.2V
–1.0
0.4V
0.6V
25
–0.5
0
40
60
80 100 120 140 160
–2
–4
–6
–8
–10
–12
| Y fs |  V GS
Forward transfer admittance |Yfs| (mS)
VDS=–10V
f=1kHz
Ta=25˚C
3.0
2.5
2.0
1.5
1.0
0.5
12
10
8
6
4
2
0
1.5
1.0
0.5
0
Gate to source voltage VGS (V)
0
–2
–4
–6
–8
2
3
4
5
C iss, C oss, C rss  V DS
VDS=–10V
f=1kHz
Ta=25˚C
14
1
Gate to source voltage VGS (V)
| Y fs |  I D
16
0
2.0
0
Drain to source voltage VDS (V)
4.0
3.5
–1.0
0
0
Ambient temperature Ta (˚C)
–1.5
– 0.5
–10
Drain current ID (mA)
–12
Input capacitance (Common source), Output capacitance (Common source),
Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF)
20
–2.0
0.8V
0
0
240
Drain current ID (mA)
–2.5
Drain current ID (mA)
Allowable power dissipation PD (mW)
200
Forward transfer admittance |Yfs| (mS)
2SJ0364
24
f=1MHz
VGS=0
Ta=25˚C
20
16
Ciss
12
8
4
Coss
Crss
0
–1
–3
–10
–30
–100
Drain to source voltage VDS (V)
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2001 MAR