Silicon Junction FETs (Small Signal) 2SK0663 (2SK663) Silicon N-Channel Junction FET For low-frequency amplification For switching (0.425) unit: mm 0.3+0.1 –0.0 ■ Features 0.15+0.10 –0.05 2.1±0.1 5° 1.25±0.10 0.9+0.2 –0.1 ● Low noise-figure (NF) ● High gate to drain voltage VGDO ● S-mini type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing. 0.9±0.1 3 2 0.2±0.1 1 (0.65) (0.65) 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings (Ta = 25°C) Symbol Ratings Unit Drain to Source voltage VDSX 55 V Gate to Drain voltage VGDO −55 V Gate to Source voltage VGSO −55 V Drain current ID 30 mA Gate current IG 10 mA Allowable power dissipation PD 150 mW Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125 °C 0 to 0.1 Parameter 10° 1: Source 2: Drain 3: Gate EIAJ: SC-70 SMini3-G1 Package Marking Symbol (Example): 2B ■ Electrical Characteristics (Ta = 25°C) Parameter Symbol Drain to Source cut-off current VDS = 10V, VGS = 0 Gate to Source leakage current IGSS VGS = −30V, VDS = 0 Gate to Drain voltage VGDS IG = 100µA, VDS = 0 Gate to Source cut-off voltage VGSC VDS = 10V, ID = 10µA Mutual conductance gm VDS = 10V, ID = 5mA, f = 1kHz Input capacitance (Common Source) Ciss Reverse transfer capacitance (Common Source) Crss Noise figure * Conditions IDSS* NF VDS = 10V, VGS = 0, f = 1MHz VDS = 10V, VGS = 0, Rg = 100kΩ f = 100Hz min typ 1 55 max Unit 12 mA −10 nA 80 V −5 2.5 V 7.5 mS 6.5 pF 1.9 pF 2.5 dB IDSS rank classification Runk P Q R IDSS (mA) 1 to 3 2 to 6.5 5 to 12 Marking Symbol 2BP 2BQ 2BR Note) The part number in the parenthesis shows conventional part number. 253 Silicon Junction FETs (Small Signal) PD Ta ID VDS 240 ID VDS 5 10 Ta=25˚C 200 120 80 8 3 VGS=0 – 0.2V – 0.4V 2 – 0.6V 1 40 Drain current ID (mA) 160 VGS=0V – 0.2V 6 – 0.4V 4 – 0.6V – 0.8V 2 – 0.8V –1.0V –1.0V 0 –1.2V 0 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) 0.1 0.2 0.3 0.4 0.5 0.6 0 Drain to source voltage VDS (V) ID VGS VDS=10V Ta=–25˚C 25˚C 4 75˚C 10 12 gm ID VDS=10V Ta=25˚C Mutual conductance gm (mS) 10 8 VDS=10V Ta=25˚C Mutual conductance gm (mS) 12 6 12 14 6 4 Drain to source voltage VDS (V) 12 8 2 gm VGS 16 Drain current ID (mA) Ta=25˚C 4 Drain current ID (mA) Allowable power dissipation PD (mW) 2SK0663 10 8 6 4 2 10 8 IDSS=7.5mA 6 4 2 2 0 0 – 0.2 – 0.4 – 0.6 – 0.8 –1.0 0 –2.0 –1.2 Gate to source voltage VGS (V) 0 –1.6 12 10 8 6 4 2 0 6 8 10 12 Drain to source voltage VDS (V) 254 Output capacitance (Common source) Coss (pF) Input capacitance (Common source) Ciss (pF) VGS=0 Ta=25˚C 4 – 0.4 0 Coss VDS 14 2 – 0.8 Gate to source voltage VGS (V) Ciss VDS 16 0 –1.2 8 VGS=0 Ta=25˚C 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 Drain to source voltage VDS (V) 0 2 4 6 8 Drain current ID (mA) 10 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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