BC635, BC637, BC639 High Current Transistors NPN Silicon MAXIMUM RATINGS http://onsemi.com Rating Symbol BC635 BC637 BC639 Unit Collector – Emitter Voltage VCEO 45 60 80 Vdc Collector – Base Voltage VCBO 45 60 80 Vdc Emitter – Base Voltage VEBO 5.0 COLLECTOR 2 Vdc Collector Current — Continuous IC Total Device Dissipation @ TA = 25°C Derate above 25°C PD Total Device Dissipation @ TC = 25°C Derate above 25°C PD Operating and Storage Junction Temperature Range TJ, Tstg – 55 to +150 °C Electrostatic Discharge ESD HBM>16000, MM>2000 V Max Unit 3 BASE Adc 0.5 mW mW/°C 625 5.0 1 EMITTER Watt mW/°C 1.5 12 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Thermal Resistance, Junction to Ambient RqJA Thermal Resistance, Junction to Case RqJC TO–92 (TO–226AA) CASE 29 STYLE 14 °C/W 200 Semiconductor Components Industries, LLC, 2000 February, 2000 – Rev. 2 3 °C/W ORDERING INFORMATION 83.3 1 Device Package Shipping BC635RL1 TO–92 2000 Units/Tape & Reel BC635ZL1 TO–92 2000 Units/Ammo Pack BC637 TO–92 5000 Units/Box BC639 TO–92 5000 Units/Box BC639RL1 TO–92 2000 Units/Tape & Reel BC639ZL1 TO–92 2000 Units/Ammo Pack Publication Order Number: BC635/D BC635, BC637, BC639 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 45 60 80 — — — — — — 45 60 80 — — — — — — 5.0 — — Vdc — — — — 100 10 nAdc µAdc 25 40 40 40 25 — — — — — — 250 160 160 — OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 µAdc, IE = 0) V(BR)CEO BC635 BC637 BC639 Vdc V(BR)CBO BC635 BC637 BC639 Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCB = 30 Vdc, IE = 0) (VCB = 30 Vdc, IE = 0, TA = 125°C) Vdc ICBO ON CHARACTERISTICS(1) DC Current Gain (IC = 5.0 mAdc, VCE = 2.0 Vdc) (IC = 150 mAdc, VCE = 2.0 Vdc) hFE BC635 BC637 BC639 (IC = 500 mA, VCE = 2.0 V) — Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) — — 0.5 Vdc Base–Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) — — 1.0 Vdc fT — 200 — MHz Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Cob — 7.0 — pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 50 — pF DYNAMIC CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) 1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%. http://onsemi.com 2 BC635, BC637, BC639 500 1000 VCE = 2 V SOA = 1S 200 PD TA 25°C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) 500 100 50 PD TC 25°C 20 10 5 1 BC635 BC637 BC639 PD TA 25°C PD TC 25°C 2 1 2 3 4 5 7 10 20 30 40 50 70 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 200 100 50 20 100 1 3 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 1000 Figure 2. DC Current Gain 500 1 300 V, VOLTAGE (VOLTS) 0.8 VCE = 2 V 100 50 VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 2 V 0.6 0.4 0.2 VCE(sat) @ IC/IB = 10 20 1 10 100 IC, COLLECTOR CURRENT (mA) 0 1000 1 Figure 3. Current–Gain — Bandwidth Product θV, TEMPERATURE COEFFICIENTS (mV/°C) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. Active Region Safe Operating Area 5 10 100 IC, COLLECTOR CURRENT (mA) Figure 4. “Saturation” and “On” Voltages –0.2 –1.0 VCE = 2 VOLTS ∆T = 0°C to +100°C –1.6 θV for VBE –2.2 1 3 5 10 30 50 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 5. Temperature Coefficients http://onsemi.com 3 1000 1000 BC635, BC637, BC639 PACKAGE DIMENSIONS TO–92 (TO–226AA) CASE 029–04 ISSUE AD A B STYLE 14: PIN 1. EMITTER 2. COLLECTOR 3. BASE R P L F SEATING PLANE K DIM A B C D F G H J K L N P R V D J X X G H V C 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. SECTION X–X N N INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). 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