ON Semiconductor MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300 Vdc Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg –55 to +150 °C Operating and Storage Junction Temperature Range 1 3 CASE 29–10, STYLE 1 TO–92 (TO–226AE) COLLECTOR 3 2 BASE THERMAL CHARACTERISTICS Characteristic 2 Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 125 °C/W Thermal Resistance, Junction to Case RJC 50 °C/W 1 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit Collector–Emitter Breakdown Voltage(1) (IC = –1.0 mAdc, IB = 0) V(BR)CEO –300 — Vdc Collector–Base Breakdown Voltage (IC = –100 µAdc, IE = 0) V(BR)CBO –300 — Vdc Emitter–Base Breakdown Voltage (IE = –100 µAdc, IC = 0) V(BR)EBO –5.0 — Vdc Collector Cutoff Current (VCB = –200 Vdc, IE = 0) ICBO — –0.25 µAdc Emitter Cutoff Current (VEB = –3.0 Vdc, IC = 0) IEBO — –0.1 µAdc OFF CHARACTERISTICS 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. Preferred devices are ON Semiconductor recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 2001 March, 2001 – Rev. 2 1 Publication Order Number: MPSW92/D MPSW92 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 25 40 25 — — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) (IC = –30 mAdc, VCE = –10 Vdc) hFE — Collector–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VCE(sat) — –0.5 Vdc Base–Emitter Saturation Voltage (IC = –20 mAdc, IB = –2.0 mAdc) VBE(sat) — –0.9 Vdc fT 50 — MHz Ccb — 6.0 pF SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz) Collector–Base Capacitance (VCB = –20 Vdc, IE = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. http://onsemi.com 2 MPSW92 300 hFE , DC CURRENT GAIN VCE = 10 Vdc TJ = +125°C 250 200 25°C 150 -55°C 100 50 0 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) C, CAPACITANCE (pF) 100 f, T CURRENT-GAIN BANDWIDTH (MHz) Figure 1. DC Current Gain Cib @ 1MHz 10 Ccb @ 1MHz 1.0 0.1 0.1 1.0 10 100 VR, REVERSE VOLTAGE (VOLTS) 150 130 110 90 70 50 30 10 1000 TJ = 25°C VCE = 20 Vdc F = 20 MHz 1 Figure 2. Capacitance 3 5 11 13 15 7 9 IC, COLLECTOR CURRENT (mA) 17 19 21 Figure 3. Current–Gain — Bandwidth 1.4 V, VOLTAGE (VOLTS) 1.2 VCE(sat) @ 25°C, IC/IB = 10 VCE(sat) @ 125°C, IC/IB = 10 VCE(sat) @ -55°C, IC/IB = 10 VBE(sat) @ 25°C, IC/IB = 10 1.0 0.8 VBE(sat) @ 125°C, IC/IB = 10 VBE(sat) @ -55°C, IC/IB = 10 VBE(on) @ 25°C, VCE = 10 V VBE(on) @ 125°C, VCE = 10 V VBE(on) @ -55°C, VCE = 10 V 0.6 0.4 0.2 0.0 0.1 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 4. ”ON” Voltages http://onsemi.com 3 MPSW92 PACKAGE DIMENSIONS TO–92 (TO–226) CASE 29–10 ISSUE AL A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R D G H J R 1 2 3 N C SECTION X–X N INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.021 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 --0.250 --0.080 0.105 --0.100 0.135 --- MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.457 0.533 0.407 0.482 1.15 1.39 2.42 2.66 0.46 0.61 12.70 --6.35 --2.04 2.66 --2.54 3.43 --- YLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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