NTR0202PL Power MOSFET 400 mA, 20 V P−Channel SOT−23 Package Features • Low RDS(on) Provides Higher Efficiency and Extends Battery Life • RDson = 0.80 , VGS = 10 V RDson = 1.10 , VGS = 4.5 V Miniature SOT−23 Surface Mount Package Saves Board Space http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX 20 V 550 m @ 10 V 400 mA Applications • • • • • Dc−Dc Converters Computers Printers PCMCIA Cards Cellular and Cordless Telephones P−Channel 3 1 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 20 Vdc Gate−to−Source Voltage − Continuous VGS 20 Vdc Continuous Drain Current @ TA = 25°C Pulsed Drain Current (tp ≤ 10 s) ID IDM 0.4 1.0 A Total Power Dissipation @ TA = 25°C (Note 1) PD 225 mW Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C Thermal Resistance − Junction−to−Ambient RJA 556 °C/W TL 260 °C Rating 2 MARKING DIAGRAM 3 Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds SOT−23 CASE 318 STYLE 21 1 PL W 2 PL W 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. = Device Code = Work Week PIN ASSIGNMENT 3 Drain 1 2 Gate Source ORDERING INFORMATION Package Shipping† NTR0202PLT1 SOT−23 3000 Tape & Reel NTR0202PLT3 SOT−23 10,000 Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2003 October, 2003 − Rev. 0 1 Publication Order Number: NTR0202PL/D NTR0202PL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit 20 − − 33 − − Vdc mV/°C − − − − 1.0 10 − − ±100 nAdc 1.1 − 1.9 3.0 2.3 − Vdc mV/°C − − 0.55 0.80 0.80 1.10 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 A) (Positive Temperature Coefficient) V(BR)DSS Zero Gate Voltage Drain Current (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = 20 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Adc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) (Negative Temperature Coefficient) VGS(th) Static Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 200 mAdc) (VGS = 4.5 Vdc, ID = 50 mAdc) RDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc) gfs 0.5 Mhos DYNAMIC CHARACTERISTICS (VDS = 5.0 Vdc, VGS = 0 Vdc, F=1 1.0 0 MHz) Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss − 70 − Coss − 74 − Crss − 26 − td(on) − 3.0 − tr − 6.0 − td(off) − 18 − tf − 4 − QTOT − 2.18 − QGS − 0.41 − QGD − 0.40 − − − 0.8 0.65 1.0 − trr − 11.8 − ta − 9 − tb − 3 − QRR − 0.007 − pF SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = 15 Vdc, ID = 200 mAdc, VGS = 10 V, RG = 6.0 ) Fall Time Total Gate Charge Gate−Source Charge (VDS = 15 Vdc, ID = 200 mAdc, VGS = 10 Vdc) Gate−Drain Charge ns nC BODY−DRAIN DIODE CHARACTERISTICS (Note 2) Diode Forward Voltage (Note 2) (IS = 400 mAdc, VGS = 0 V) (IS = 400 mAdc, VGS = 0 V, TJ = 150°C) VSD Reverse Recovery Time (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) Reverse Recovery Stored Charge (IS = 1.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/s) 2. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 Vdc ns C NTR0202PL 1 VGS = 10 V TJ = 25°C ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 0.75 VGS = 6 V 0.5 VGS = 5.5 V VGS = 4 V VGS = 5 V VGS = 3.5 V 0.25 VGS = 4.5 V VGS = 3 V VGS = 2.5 V 0 VDS ≥ 10 V 0.75 TJ = 125°C 0.5 TJ = 25°C 0.25 TJ = 40°C 0 0 0.25 0.5 0.75 0 1.0 1 1.5 TJ = 150°C 1 TJ = 25°C 0.5 TJ = 40°C 0.375 0.5 5 1.0 Vgs = 4.5 V 0.75 Vgs = 10 V 0.5 0.25 0 0.125 0.25 0.375 0.5 0.625 0.75 0.875 1.0 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 2.5 1000 VGS = 0 V TJ = 150°C 2 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 4 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () Figure 1. On−Region Characteristics 0.25 3 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0 0.125 2 ID = 0.05 A VGS = 4.5 V ID = 0.2 A VGS = 10 V 1 0.5 0 −40 100 10 1 TJ = 25°C 0.1 −15 10 35 60 85 110 135 2 150 TJ, JUNCTION TEMPERATURE (°C) 6 10 14 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 18 TJ = 25°C Ciss C, CAPACITANCE (pF) 80 Crss 60 Ciss 40 Coss 20 Crss 0 10 5 VGS 0 5 10 15 20 10 QT 7.5 Ciss 5 Q1 2.5 TJ = 25°C ID = 0.4 A Crss 0 0 0.5 1 1.5 2 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge Figure 7. Capacitance Variation 100 1 IS, SOURCE CURRENT (AMPS) VDD = 16 V ID = 0.2 A VGS = 4.5 V t, TIME (ns) Q2 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 100 Vgs, GATE−TO−SOURCE VOLTAGE (VOLTS) NTR0202PL td(off) tf 10 tr td(on) VGS = 0 V TJ = 25°C 0.75 0.5 0.25 0 1 1 10 100 0 RG, GATE RESISTANCE () 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 0.9 NTR0202PL INFORMATION FOR USING THE SOT−23 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT−23 POWER DISSIPATION The power dissipation of the SOT−23 is a function of the drain pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT−23 package, PD can be calculated as follows: PD = one can calculate the power dissipation of the device which in this case is 225 milliwatts. PD = 150°C − 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT−23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT−23 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. TJ(max) − TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, SOLDERING PRECAUTIONS • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 5 NTR0202PL PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−09 ISSUE AH NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01, −02, AND −06 OBSOLETE, NEW STANDARD 318−09. A L 3 1 V B 2 S G C D H J K DIM A B C D G H J K L S V INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0385 0.0498 0.0140 0.0200 0.0670 0.0826 0.0040 0.0098 0.0034 0.0070 0.0180 0.0236 0.0350 0.0401 0.0830 0.0984 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.99 1.26 0.36 0.50 1.70 2.10 0.10 0.25 0.085 0.177 0.45 0.60 0.89 1.02 2.10 2.50 0.45 0.60 STYLE 21: PIN 1. GATE 2. SOURCE 3. DRAIN Thermal Clad is a registered trademark of the Bergquist Company. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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