W82M32V-XBX 2Mx32 SRAM 3.3V MULTI-CHIP PACKAGE ADVANCED* FEATURES Low Power CMOS Access Times of 12, 15, 17, 20ns TTL Compatible Inputs and Outputs Packaging Fully Static Operation: • 255 PBGA, 25mm x 25mm, 625mm • No clock or refresh required. 2 Organized as 2Mx32 Three State Output. Commercial, Industrial and Military Temperature Ranges * Advanced data sheet describes a product that is developmental, non-qualified and is subject to change or cancellation without notice. Low Voltage Operation: • 3.3V ± 10% Power Supply PIN CONFIGURATION F OR W82M32V-XBX TOP VIEW 1 A 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC GND GND V C C VCC A 18 A 17 A 16 GND NC NC B NC NC NC NC NC NC C NC NC NC A2 A1 A0 D NC NC CS2 A3 A4 D14 D15 CS4 D24 D25 OE A 15 NC NC NC E NC NC D9 D8 A 19 D12 D13 GND V C C D26 D27 WE4 D31 D30 NC NC F NC NC D10 D11 GND GND GND GND V C C VCC VCC VCC D28 D29 NC NC G NC NC WE2 GND GND GND GND GND V C C VCC VCC VCC VCC NC NC NC VCC VCC VCC NC H NC NC GND GND GND GND GND GND V C C VCC VCC NC NC J NC NC VCC VCC VCC VCC V C C V C C GND GND GND GND GND GND NC NC K NC NC CS1 V C C VCC VCC V C C V C C GND GND GND GND GND NC NC NC L NC NC D1 D0 VCC VCC V C C V C C GND GND GND GND D23 D22 NC NC M NC NC D2 D3 A 20 D7 D5 V C C GND D17 D16 CS3 D20 D21 NC NC N NC NC WE1 A6 A5 D6 D4 NC D19 D18 A 14 A 13 NC NC NC P NC NC GND A7 A8 A9 V C C V C C GND GND A 10 A 11 A 12 VCC NC NC R NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC T NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC NC WE3 PIN D ESCRIPTION BLOCK DIAGRAM I/O0-31 Data Inputs/Outputs A0-20 Address Inputs WE1-4 Write Enables CS1-4 Chip Selects OE Output Enable VCC Power Supply GND Ground NC Not Connected November 2003 Rev. 3 2M 1 2M 2M 2M White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com W82M32V-XBX ABSOLUTE MAXIMUM RATINGS Parameter Symbol Min Operating Temperature TA Storage Temperature TRUTH TABLE Max Unit -55 +125 °C °C TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 4.6 V Junction Temperature TJ 150 °C 4.6 V Supply Voltage -0.5 VCC CS H L L L WE X H L H Mode Standby Read Write Out Disable Data High Data Data High I/O Z Out In Z Power Standby Active Active Active CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter OE X L X H Symbol Min Max Unit Supply Voltage VCC 3.0 3.6 V Input High Voltage VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V Parameter Symbol Conditions Max Unit OE capacitance C OE VIN = 0 V, f = 1.0 MHz 30 pF WE1-4 capacitance CS1-4 capacitance CWE C CS VIN = 0 V, f = 1.0 MHz 10 VIN = 0 V, f = 1.0 MHz 10 pF pF Data I/O capacitance CI/O VI/O = 0 V, f = 1.0 MHz 10 pF Address input capacitance C AD VIN = 0 V, f = 1.0 MHz 30 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 3.3V ± 0.3V, TA = -55°C to +125°C) Parameter Sym Conditions Units Min Input Leakage Current I LI VIN = GND to VCC Output Leakage Current ILO CS = VIH, OE = VIH , VOUT = GND to VCC Operating Supply Current (x 32 Mode) Max 10 µA 10 µA ICC x 32 CS = VIL, OE = VIH, f = 5MHz, VCC = 3.6V 1100 mA Standby Current ISB CS = VIH, OE = VIH, f = 5MHz, VCC = 3.6V 400 mA Output Low Voltage VOL IOL = 8mA 0.4 Output High Voltage VOH IOH = -4.0mA 2.4 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V. NOTE: Contact factory for low power option. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 2 V V r by W82M32V-XBX AC CHARACTERISTICS (VCC = 3.3V, TA = -55°C to +125°C) Parameter Symbol -12 Read Cycle Min Read Cycle Time tRC Address Access Time t AA Output Hold from Address Change 12 Min -17 Max Min 15 15 3 Min 20 3 12 15 7 ns 20 ns 20 ns 10 ns 3 ns 17 8 Units Max 17 3 tACS -20 Max 17 12 t OH Chip Select Access Time -15 Max Output Enable to Output Valid tOE Chip Select to Output in Low Z t CLZ 1 3 3 3 8 3 Output Enable to Output in Low Z t OLZ 1 1 1 1 1 Chip Disable to Output in High Z t CHZ 1 7 8 8 10 ns Output Disable to Output in High Z t OHZ 1 7 8 8 10 ns ns ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 3.3V, TA = -55°C to +125°C) Parameter Symbol Write Cycle -12 Min -15 Max Min -17 Max Min -20 Max Min Units Max Write Cycle Time tWC 12 15 17 20 ns Chip Select to End of Write tCW 10 12 12 14 ns Address Valid to End of Write tAW 10 12 12 14 ns Data Valid to End of Write tDW 8 9 9 10 ns Write Pulse Width tWP 10 12 14 14 ns Address Setup Time t AS 0 0 0 0 ns Address Hold Time tAH 0 0 0 0 ns Output Active from End of Write tOW1 2 2 3 3 Write Enable to Output in High Z t WHZ1 Data Hold Time tDH 7 8 0 ns 8 0 0 9 ns 0 ns 1. This parameter is guaranteed by design but not tested. AC TEST CIRCUIT AC TEST CONDITIONS Parameter Typ Unit Input Pulse Levels VIL = 0, V IH = 2.5 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of V OH and VOL. IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. 3 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com W82M32V-XBX TIMING WAVEFORM - READ CYCLE WRITE CYCLE - WE CONTROLLED WRITE CYCLE - CS CONTROLLED WS32K32-XHX White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 4 W82M32V-XBX PACKAGE 781: 255 BALL GRID ARRAY ADVANCED* BOTTOM VIEW 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 255x 0.762(0.030) NOM 1 A B C 19.05 (0.750) NOM 25.1 (0.988) MAX D E F G H 1.27 (0.050) NOM J K L M N P R T 0.69 (0.027) NOM 1.27 (0.050) NOM 19.05 (0.750) NOM 2.16 (0.085) MAX 25.1 (0.955) MAX ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES *Note: Advanced Product. This product is developmental, is not qualified, and is subject to change or cancellation without notice. 5 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com W82M32V-XBX ORDERING INFORMATION W 8 2M 32 V - XX X X DEVICE GRADE: M = Military I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE TYPE: B = 25mm x 25mm, 255 PBGA ACCESS TIME (ns) Low Voltage Supply 3.3V ± 10% ORGANIZATION, 2Mx32 User configurable as 4Mx16 or 8Mx8 SRAM WHITE ELECTRONIC DESIGNS CORP. White Electronic Designs Corporation • Phoenix AZ • (602) 437-1520 6 W82M32V-XBX Document Title 2M x 32 Asynchronous SRAM Revision History Rev # History Release Date Status Rev 0 Initial Release July 2002 Advanced Rev 1 Changes October 2002 1.1 Add AC/DC Electricals & Timing Diagrams (Pg. 1-7) 1.2 Change Pinout to full 255 (16x16) array 1.3 Change Package Dimension to full 255 (16x16) array Advanced Rev 2 Changes (Pg.1,5,6,7) May 2002 1.1 Change package dimension from 27mm square to 25mm square 1.2 Change package height from 2.20mm to 2.70mm Max Advanced Rev 3 Changes (Pg.1,5,7) November 2003 1.1 Change package mechanical drawing to new format. Advanced 7 White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com