White Electronic Designs WMS512K8-XXX 512Kx8 MONOLITHIC SRAM, SMD 5962-95613 EVOLUTIONARY PINOUT A18 A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND FEATURES 32 DIP 32 CSOJ (DE) ■ Access Times 70, 85, 100, 120ns ■ MIL-STD-883 Compliant Devices Available TOP VIEW ■ Evolutionary, Corner Power/Ground Pinout JEDEC Approved 32 pin Ceramic DIP (Package 300) 32 lead Ceramic SOJ (Package 101) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 A17 WE A13 A8 A9 A11 OE A10 CS I/O7 I/O6 I/O5 I/O4 I/O3 ■ Commercial, Industrial and Military Temperature Ranges ■ 5 Volt Power Supply ■ Low Power CMOS ■ Low Power Data Retention ■ TTL Compatible Inputs and Outputs PIN DESCRIPTION A0-18 Address Inputs I/O0-7 Data Input/Output CS Chip Select OE Output Enable WE Write Enable VCC +5.0V Power GND Ground March 2003 Rev. 4 1 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WMS512K8-XXX White Electronic Designs A BSOLUTE MAXIMUM RATINGS Parameter Operating Temperature TRUTH TABLE Symbol Min Max Unit CS OE WE Mode Data I/O Power TA -55 +125 °C °C H L L L X L X H X H L H Standby Read Write Out Disable High Z Data Out Data In High Z Standby Active Active Active TSTG -65 +150 Signal Voltage Relative to GND VG -0.5 Vcc+0.5 V Junction Temperature TJ 150 °C 7.0 V Storage Temperature Supply Voltage -0.5 VCC CAPACITANCE (TA = +25°C) RECOMMENDED OPERATING CONDITIONS Parameter Symbol Min Max Unit Supply Voltage VCC 4.5 5.5 V Input High Voltage VIH 2.2 V CC + 0.3 V Input Low Voltage VIL -0.3 +0.8 V Operating Temp. (Mil.) TA -55 +125 °C Parameter Input capacitance Output capacitance Symbol Condition CIN VIN = 0V, f = 1.0MHz Max Unit 12 pF COUT VOUT = 0V, f = 1.0MHz 12 pF This parameter is guaranteed by design but not tested. DC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C) Parameter Symbol Conditions Min Max Units Input Leakage Current ILI VCC = 5.5, VIN = GND to VCC 10 Output Leakage Current I LO CS = VIH , OE = VIH , VOUT = GND to VCC 10 µA Operating Supply Current I CC CS = VIL, OE = VIH, f = 5MHz, Vcc = 5.5 50 mA Standby Current I SB CS = VIH, OE = VIH, f = 5MHz, Vcc = 5.5 1 mA Output Low Voltage VOL I OL = 2.1mA, VCC = 4.5 0.4 V Output High Voltage VOH I OH = -1.0mA, VCC = 4.5 NOTE: DC test conditions: VIH = VCC -0.3V, VIL = 0.3V µA 2.4 V DATA RETENTION CHARACTERISTICS (TA = -55°C TO +125°C) Parameter Symbol Conditions Min Data Retention Supply Voltage Data Retention Current V DR CS ³ V CC -0.2V I CCDR1 V CC = 3V Military Typ 2.0 100 Units Max 5.5 V 400 µA DATA RETENTION CHARACTERISTICS FOR LOW POWER L VERSION Parameter Symbol Data Retention Supply Voltage V DR Low Power Data Retention (L) I CCDR1 Conditions CS ³ V CC -0.2V 2.0 V CC = 2V White Electronic Designs Corporation Phoenix AZ (602) 437-1520 Min 2 Max Units 5.5 V 185 µA WMS512K8-XXX White Electronic Designs AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C) Parameter Symbol Read Cycle -70 -85 Min Max 70 Min -100 Max 85 -120 Min Max 100 Min Units Max Read Cycle Time t RC Address Access Time t AA Output Hold from Address Change t OH Chip Select Access Time t ACS 70 85 100 120 ns Output Enable to Output Valid t OE 35 40 50 60 ns Chip Select to Output in Low Z t CLZ 1 10 10 10 10 ns Output Enable to Output in Low Z t OLZ 1 5 5 5 5 ns Chip Disable to Output in High Z t CHZ 1 25 25 35 35 ns Output Disable to Output in High Z t OHZ 1 25 25 35 35 ns 70 5 120 85 ns 100 5 5 120 ns 5 ns 1. This parameter is guaranteed by design but not tested. AC CHARACTERISTICS (VCC = 5.0V, GND = 0V, TA = -55°C TO +125°C) Parameter Symbol Write Cycle -70 Min -85 Max Min -100 Max Min -120 Max Min Units Max Write Cycle Time t WC 70 85 100 120 ns Chip Select to End of Write t CW 60 75 80 100 ns Address Valid to End of Write t AW 60 75 80 100 ns Data Valid to End of Write t DW 30 30 40 40 ns Write Pulse Width t WP 50 50 60 60 ns Address Setup Time t AS 0 0 0 0 ns Address Hold Time t AH 5 5 5 5 ns Output Active from End of Write t OW 1 5 5 5 5 Write Enable to Output in High Z t WHZ 1 Data Hold from Write Time t DH 25 0 25 0 ns 35 35 0 ns 0 ns 1. This parameter is guaranteed by design but not tested. AC TEST CIRCUIT Parameter I OL Current Source VZ D.U.T. ≈ 1.5V (Bipolar Supply) C eff = 50 pf I OH Current Source 3 AC TEST CONDITIONS Typ Unit Input Pulse Levels VIL = 0, V IH = 3.0 V Input Rise and Fall 5 ns Input and Output Reference Level 1.5 V Output Timing Reference Level 1.5 V Notes: VZ is programmable from -2V to +7V. IOL & IOH programmable from 0 to 16mA. Tester Impedance Z0 = 75 W. VZ is typically the midpoint of VOH and VOL . IOL & IOH are adjusted to simulate a typical resistive load circuit. ATE tester includes jig capacitance. White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WMS512K8-XXX White Electronic Designs TIMING WAVEFORM - READ CYCLE tRC ADDRESS tAA CS tRC tCHZ tACS ADDRESS tCLZ tAA OE tOE tOLZ tOH DATA I/O DATA I/O DATA VALID PREVIOUS DATA VALID tOHZ DATA VALID HIGH IMPEDANCE READ CYCLE 1 (CS = OE = VIL, WE = VIH) READ CYCLE 2 (WE = VIH) WRITE CYCLE - WE CONTROLLED tWC ADDRESS tAW tAH tCW CS tAS tWP WE tOW tWHZ tDW DATA I/O tDH DATA VALID WRITE CYCLE 1, WE CONTROLLED WRITE CYCLE - CS CONTROLLED tWC ADDRESS tAS tAW WS32K32-XHX tAH tCW CS tWP WE tDW DATA I/O DATA VALID WRITE CYCLE 2, CS CONTROLLED White Electronic Designs Corporation Phoenix AZ (602) 437-1520 4 tDH White Electronic Designs WMS512K8-XXX PACKAGE 101: 32 LEAD, CERAMIC SOJ 3.96 (0.156) MAX 21.1 (0.830) ± 0.25 (0.010) 0.89 (0.035) Radius TYP 0.2 (0.008) ± 0.05 (0.002) 11.23 (0.442) ± 0.30 (0.012) 9.55 (0.376) ± 0.25 (0.010) 1.27 (0.050) ± 0.25 (0.010) 1.27 (0.050) TYP 19.1 (0.750) TYP ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES PACKAGE 300: 32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED 42.8 (1.686) MAX 5.13 (0.202) MAX 3.2 (0.125) MIN 0.99 (0.039) ± 0.51 (0.020) 2.5 (0.100) TYP 1.27 (0.050) ± 0.1 (0.005) 0.46 (0.018) ± 0.05 (0.002) 0.25 (0.010) ± 0.05 (0.002) 15.25 (0.600) ± 0.25 (0.010) ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES 5 White Electronic Designs Corporation (602) 437-1520 www.whiteedc.com WMS512K8-XXX White Electronic Designs ORDERING INFORMATION W M S 512K 8 L - XXX X X X X LEAD FINISH: Blank = Gold plated leads A = Solder dip leads SPECIAL PROCESSING: E = Epitaxial Layer DEVICE GRADE: M = Military Screened I = Industrial C = Commercial -55°C to +125°C -40°C to +85°C 0°C to +70°C PACKAGE: C = 32 Pin Ceramic 0.600" DIP (Package 300) DE = 32 Lead Ceramic SOJ (Package 101) Evolutionary ACCESS TIME (ns) IMPROVEMENT MARK L = Low Power Data Retention ORGANIZATION, 512K x 8 SRAM MONOLITHIC WHITE ELECTRONIC DESIGNS DEVICE TYPE SPEED PACKAGE SMD NO. 512K x 8 SRAM Monolithic 120ns 32 pin DIP (C) 5962-95613 01HYX 512K x 8 SRAM Monolithic 100ns 32 pin DIP (C) 5962-95613 02HYX 512K x 8 SRAM Monolithic 85ns 32 pin DIP (C) 5962-95613 03HYX 512K x 8 SRAM Monolithic 70ns 32 pin DIP (C) 5962-95613 04HYX 512K x 8 SRAM Monolithic 512K x 8 SRAM Monolithic 120ns 100ns 32 lead SOJ Evol (DE) 32 lead SOJ Evol (DE) 5962-95613 01HTX 5962-95613 02HTX 512K x 8 SRAM Monolithic 512K x 8 SRAM Monolithic 85ns 70ns 32 lead SOJ Evol (DE) 32 lead SOJ Evol (DE) 5962-95613 03HTX 5962-95613 04HTX White Electronic Designs Corporation Phoenix AZ (602) 437-1520 6