2SD2030, 2SD2031 Silicon NPN Epitaxial Application Low frequency high voltage amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SD2030, 2SD2031 Absolute Maximum Ratings (Ta = 25°C) Item Symbol 2SD2030 2SD2031 Unit Collector to base voltage VCBO 160 200 V Collector to emitter voltage VCEO 160 200 V Emitter to base voltage VEBO 5 5 V Collector current IC 100 100 mA Collector power dissipation PC 400 400 mW Junction temperature Tj 150 150 °C Storage temperature Tstg –55 to +150 –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Collector to base breakdown voltage Collector to emitter breakdown voltage Min Typ Max Unit Test conditions 2SD2030 V(BR)CBO 160 — — V I C = 10 µA, IE = 0 2SD2031 200 2SD2030 V(BR)CEO 160 — — V I C = 1 mA, RBE = ∞ 2SD2031 200 5 — — V I E = 10 µA, IC = 0 — — 10 µA VCB = 140 V, IE = 0 Emitter to base breakdown voltage Collector cutoff current V(BR)EBO 2SD2030 I CBO 2SD2031 DC current transfer ratio VCB = 160 V, IE = 0 60 — 200 VCE = 5 V, IC = 10 mA hFE2 30 — — VCE = 5 V, IC = 1 mA Base to emitter voltage VBE — — 1.5 V VCE = 5 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) — — 0.5 V I C = 30 mA, IB = 3 mA Gain bandwidth product fT — 140 — MHz VCE = 5 V, IC = 10 mA Collector output capacitance Cob — 3.8 — pF VCB = 10 V, IE = 0, f = 1 MHz Note: hFE1* 1 1. The 2SD2030 and 2SD2031 are grouped by h FE1 as follows. Grade B C hFE1 60 to 120 100 to 200 2 2SD2030, 2SD2031 Typical Output Characteristics 20 Collector Current IC (mA) Collector Power Dissipation Pc (mW) Maximum Collector Dissipation Curve 600 400 200 0 16 120 110 100 90 80 70 60 50 40 30 20 10 µA 12 8 4 0 50 100 150 Ambient Temperature Ta (°C) 2 4 6 8 10 Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current Typical Transfer Characteristics 100 500 10 5 DC Current Transfer Ratio hFE 5°C 20 –25 50 25 VCE = 5 V Pulse Test Ta = 7 Collector Current IC (mA) IB = 0 2 1 VCE = 5 V Pulse Test 200 Ta = 75°C 100 –25 50 25 20 10 5 0 0.2 0.4 0.6 0.8 Base to Emitter Voltage VBE (V) 1.0 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SD2030, 2SD2031 Gain Bandwidth Product vs. Collector Current 500 5 lC = 10 lB Pulse Test Gain Bandwidth Product fT (MHz) Collector to Emitter Saturation Voltage VCE (sat) (V) Base to Emitter Saturation Voltage VBE (sat) (V) Saturation Voltage vs. Collector Current 2 VBE (sat) 1.0 0.5 Ta = –25°C 75 0.2 25 75 25 VCE (sat) Ta = 0.1 25°C – 0.05 1 2 5 10 20 50 Collector Current IC (mA) 100 VCE = 5 V Pulse Test 200 100 50 20 10 5 0.5 1.0 2 5 10 20 Collector Current IC (mA) Collector Output Capacitance Cob (pF) Collector Output Capacitance vs. Collector to Base Voltage 50 20 f = 1 MHz IE = 0 10 5 2 1.0 0.5 1 4 2 5 10 20 50 100 Collector to Base Voltage VCB (V) 50 Unit: mm 4.8 ± 0.3 0.7 0.60 Max 0.5 ± 0.1 12.7 Min 2.3 Max 5.0 ± 0.2 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (1) Conforms Conforms 0.25 g Cautions 1. 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