2SC4829 Silicon NPN Epitaxial Application High frequency amplifier Features • High frequency characteristics fT = 1100 MHz Typ • High voltage and small output capacitance VCEO = 100 V, Cob = 4.2 pF Typ • Suitable for wide band video amplifier Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SC4829 Ordering Information hFE 2SC4829B 60 to 120 2SC4829C 100 to 200 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 3 V Collector current IC 0.2 A Collector peak current iC (peak) 0.5 A Collector power dissipation PC 0.9 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 100 — — V I C = 10 µA, IE = 0 Collector to emitter breakdown voltage V(BR)CEO 100 — — V I C = 1 mA, RBE = ∞ Emitter cutoff current I EBO — — 10 µA VEB = 3 V, IC = 0 Collector cutoff current I CBO — — 1.0 µA VCB = 80 V, IE = 0 DC current transfer ratio 2SC4829B hFE 60 — 120 2SC4829C hFE 100 — 200 Base to emitter voltage VBE — — 1.0 V VCE = 10 V, IC = 10 mA Collector to emitter saturation voltage VCE(sat) — — 1.0 V I C = 100 mA, IB = 10 mA Gain bandwidth product fT 800 1100 — MHz VCE = 10 V, IE = 100 mA Collector output capacitance Cob — 4.2 6.0 pF VCB = 30 V, IE = 0, f = 1 MHz 2 VCE = 10 V, IC = 10 mA 2SC4829 Typical Output Characteristics Maximum Collector Dissipation Curve 50 I C (mA) 400 µA 40 1.2 Collector Current Collector Power Dissipation Pc (W) 1.6 0.8 0.4 0 50 100 150 Ambient Temperature Ta (°C) 300 µA 30 200 µA 200 100 Ta = 75°C 25 °C –25°C 50 50 µA Collector to Emitter Saturation Voltage vs. Collector Current 1.0 I C / I B = 10 Pulse test 0.5 0.2 Ta = 75°C 0.1 25 °C 0.05 20 10 1 100 µA IB = 0 4 6 8 10 2 0 Collector to Emitter Voltage V CE (V) Collector to Emitter Saturation Voltage VCE(sat) (V) DC Current Transfer Ratio h FE 500 150 µA 10 DC Current Transfer Ratio vs. Collector Current VCE = 10 V Pulse test 250 µA 20 200 1000 350 µA –25°C 0.02 10 100 1000 Collector Current I C (mA) 0.01 1 10 100 1000 Collector Current I C (mA) 3 2SC4829 Gain Bandwidth Product vs. Collector Current Collector Current vs. Base to Emitter Voltage 5000 f T (MHz) 1000 I C (mA) VCE = 10 V Pulse test 2000 Gain Bandwidth Product 100 Collector Current VCE = 10 V Pulse test Ta = 75°C 25°C 10 1 0 –25°C 0.2 0.4 0.6 Base to Emitter Voltage 0.8 V BE (V) 1.0 1000 500 200 100 50 1 10 100 1000 Collector Current I C (mA) Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 50 20 10 5 2 1 4 IE = 0 f = 1 MHz 2 5 10 20 50 100 Collector to Base Voltage V CB (V) Unit: mm 4.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.7 0.60 Max 0.5 ± 0.1 10.1 Min 2.3 Max 8.0 ± 0.5 3.8 ± 0.3 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. 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