Power Transistors 2SD2468 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6±0.2 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO 80 V Emitter to base voltage VEBO 7 V Peak collector current ICP 8 A Collector current IC 4 A Collector power TC=25°C dissipation 35 PC Ta=25°C Junction temperature Tj Storage temperature Tstg 2.6±0.1 1.2±0.15 1.45±0.15 0.7±0.1 0.75±0.1 2.54±0.2 5.08±0.4 7° 1 2 3 1:Base 2:Collector 3:Emitter TO–220E Full Pack Package W 2 ■ Electrical Characteristics 15.0±0.3 ● 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip ● Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw +0.5 ● 13.7–0.2 ● φ3.2±0.1 3.0±0.2 ■ Features 9.9±0.3 150 ˚C –55 to +150 ˚C (TC=25˚C) Parameter Symbol Conditions min typ Unit 10 µA 50 µA ICBO Emitter cutoff current IEBO VEB = 5V, IC = 0 Collector to emitter voltage VCEO IC = 10mA, IB = 0 80 hFE1 VCE = 2V, IC = 0.1A 45 hFE2* VCE = 2V, IC = 1A 90 Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.15A 0.5 V Base to emitter saturation voltage VBE(sat) IC = 3A, IB = 0.15A 1.5 V Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf Forward current transfer ratio *h FE2 VCB = 100V, IE = 0 max Collector cutoff current IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 50V V 260 30 MHz 0.5 µs 2.5 µs 0.15 µs Rank classification Rank Q P hFE2 90 to 180 130 to 260 1 Power Transistors 2SD2468 IC — VCE 40 (1) 30 20 (2) 10 TC=25˚C IB=300mA 7 Collector current IC (A) (3) (4) 6 140mA 120mA 100mA 5 60mA 4 40mA 3 20mA 2 10mA 1 0 0 20 40 60 80 100 120 140 160 0 Ambient temperature Ta (˚C) 2 4 12 3 TC=100˚C –25˚C 25˚C 0.1 0.03 0.1 0.3 1 3 300 TC=100˚C 25˚C 100 –25˚C 30 10 3 0.1 0.3 1 3 Switching time ton,tstg,tf (µs) 100 30 10 3 Collector to base voltage VCB (V) 10 100 30 10 10 3 0.3 1 3 10 Non repetitive pulse TC=25˚C 30 tstg 1 0.1 Area of safe operation (ASO) tf 0.3 ton 0.1 ICP 10 IC t=0.5ms 3 1ms 1 DC 0.3 10ms 0.1 0.03 0.01 0.01 100 3 100 0.03 30 1 Collector current IC (A) Pulsed tw=1ms Duty cycle=1% IC/IB=10 (IB1=–IB2) VCC=50V TC=25˚C 30 300 0.3 300 1 0.01 0.03 10 ton, tstg, tf — IC 1000 0.1 VCE=10V f=10MHz TC=25˚C Collector current IC (A) IE=0 f=1MHz TC=25˚C 10 0.001 0.01 0.03 3 100 3 0.003 1000 Cob — VCB 1 0.01 3000 1 0.01 0.03 10 10000 0.3 0.03 VCE=2V 3000 Collector current IC (A) 3000 –25˚C 0.1 fT — IC 1000 0.0.1 0.01 0.03 25˚C 0.3 Collector current IC (A) Transition frequency fT (MHz) 10 0.3 TC=100˚C 1 10000 IC/IB=20 1 IC/IB=20 3 hFE — IC 30 1 0.1 10 10000 Forward current transfer ratio hFE Base to emitter saturation voltage VBE(sat) (V) 8 10 Collector to emitter voltage VCE (V) VBE(sat) — IC 100 Collector output capacitance Cob (pF) 6 Collector current IC (A) Collector power dissipation PC (W) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 2 VCE(sat) — IC 8 Collector to emitter saturation voltage VCE(sat) (V) PC — Ta 50 0 1 2 3 4 Collector current IC (A) 5 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) Power Transistors 2SD2468 Rth(t) — t Thermal resistance Rth(t) (˚C/W) 103 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 10–3 10–2 10–1 1 10 102 103 104 Time t (s) 3