PD - 95970 IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. Lead-Free VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits Generation 4 IGBT's offer highest efficiency available. IGBT's optimized for specific application conditions. HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Max. Units VCES Collector-to-Emitter Voltage Parameter 600 V IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current d 17 c A 120 120 IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 120 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range 42 -55 to +150 °C Thermal / Mechanical Characteristics Parameter Min. Typ. Max. Units °C/W RθJC Junction-to-Case- IGBT ––– ––– 1.2 RθCS Case-to-Sink, flat, greased surface ––– 0.50 ––– g RθJA Junction-to-Ambient (PCB Mounted,steady state) ––– ––– 40 Wt Weight ––– 2.0 (0.07) ––– www.irf.com g (oz.) 1 12/02/04 IRG4BC30FD-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter e V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Voltage Min. Typ. Max. Units 600 — — — 0.69 — — 1.59 1.8 — 1.99 — — 1.7 — VGE(th) Gate Threshold Voltage 3.0 — 6.0 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -11 — gfe ICES Forward Transconductance Zero Gate Voltage Collector Current 6.1 10 — — — 250 — — 2500 — 1.4 1.7 — 1.3 1.6 — — ±100 VFM f Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1mA IC = 17A V VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150°C V VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 17A µA VGE = 0V, VCE = 600V V IF = 12A VGE = 0V, VCE = 600V, TJ = 150°C See Fig. 13 IF = 12A, TJ = 150°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Conditions Min. Typ. Max. Units — 51 IC = 17A 77 Qge Gate-to-Emitter Charge (turn-on) — 7.9 12 Qgc Gate-to-Collector Charge (turn-on) — 19 28 td(on) Turn-On delay time — 42 — tr Rise time — 26 — td(off) Turn-Off delay time — 230 350 tf Fall time — 160 230 Eon Turn-On Switching Loss — 0.63 — nC VCC = 400V See Fig. 8 VGE = 15V TJ = 25°C ns IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and diode reverse recovery. Eoff Turn-Off Switching Loss — 1.39 — Ets Total Switching Loss — 2.02 3.9 td(on) Turn-On delay time — 42 — tr Rise time — 27 — td(off) Turn-Off delay time — 310 — tf Fall time — 310 — Ets Total Switching Loss — 3.2 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Cies Input Capacitance — 1100 — Measured 5mm from package VGE = 0V — 74 — pF VCC = 30V ns TJ = 25°C Coes Output Capacitance Cres Reverse Transfer Capacitance — 14 — trr Diode Reverse Recovery Time — 42 60 — 80 120 — 3.5 6.0 Irr Diode Peak Reverse Recovery Current — 5.6 10 Qrr Diode Reverse Recovery Charge — 80 180 220 600 di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — During tb — 120 — 2 mJ See Fig. 9, 10, 11, 18 ns TJ = 150°C See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and See Fig. 7 f = 1.0MHz TJ = 125°C A TJ = 25°C nC TJ = 25°C TJ = 125°C TJ = 125°C A/µs TJ = 25°C TJ = 125°C See Fig. 14 IF = 12A See Fig. 15 VR = 200V See Fig. 16 di/dt 200A/µs See Fig. 17 www.irf.com IRG4BC30FD-SPbF www.irf.com 3 IRG4BC30FD-SPbF 4 www.irf.com IRG4BC30FD-SPbF www.irf.com 5 IRG4BC30FD-SPbF 6 www.irf.com IRG4BC30FD-SPbF www.irf.com 7 IRG4BC30FD-SPbF 90% Vge Same type device as D.U.T. +Vge Vce 430µF 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Fig. 18a - Test Circuit for Measurement of Eoff = ∫ t1+5µS Vce icIcdtdt Vce t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Qrr = Ic ∫ trr id Ic dtdt tx +Vg tx 10% Irr 10% Vcc Vcc DUT VOLTAGE AND CURRENT Vce Vpk Irr Vcc 10% Ic 90% Ic Ipk Ic DIODE RECOVERY WAVEFORMS tr td(on) 5% Vce t1 ∫ t2 VceieIcdt dt Eon = Vce t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30FD-SPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µF 100V Fig. 19 - Clamped Inductive Load Test Circuit www.irf.com Fig. 20 - Pulsed Collector Current Test Circuit 9 IRG4BC30FD-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF530S WIT H LOT CODE 8024 ASS EMBLED ON WW 02, 2000 IN T HE ASS EMBLY LINE "L" INT ERNAT IONAL RECT IFIER LOGO AS SEMBLY LOT CODE PART NUMBER F530S DAT E CODE YEAR 0 = 2000 WEEK 02 LINE L OR INT ERNAT IONAL RECTIFIER LOGO AS S EMBLY LOT CODE 10 PART NUMBER F530S DAT E CODE P = DES IGNAT ES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = AS SEMBLY SIT E CODE www.irf.com IRG4BC30FD-SPbF D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20). VCC=80%(VCES), VGE=20V, L=10µH, RG = 23Ω (figure 19). Pulse width ≤ 80µs; duty factor ≤ 0.1%. Pulse width 5.0µs, single shot. When mounted on 1" square PCB (FR-4 or G-10 Material). Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 11 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/