IRF IRG4PC40UD

PD 9.1467D
IRG4PC40UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.72V
G
@VGE = 15V, IC = 20A
E
n-ch an nel
Benefits
• Generation -4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
40
20
160
160
15
160
± 20
160
65
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
-------------------------
----------0.24
----6 (0.21)
0.77
1.7
-----40
------
Units
°C/W
g (oz)
4/17/97
IRG4PC40UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown Voltageƒ 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on)
Collector-to-Emitter Saturation Voltage
---------VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe
Forward Transconductance „
11
ICES
Zero Gate Voltage Collector Current
------VFM
Diode Forward Voltage Drop
------IGES
Gate-to-Emitter Leakage Current
---V(BR)CES
Typ.
---0.63
1.72
2.15
1.7
----13
18
------1.3
1.2
----
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---- V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 20A
VGE = 15V
---V
IC = 40A
See Fig. 2, 5
---IC = 20A, TJ = 150°C
6.0
VCE = V GE, IC = 250µA
---- mV/°C VCE = V GE, IC = 250µA
---S
VCE = 100V, IC = 20A
250
µA
VGE = 0V, VCE = 600V
3500
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 15A
See Fig. 13
1.6
IC = 15A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
----------------------------------------------------------------------------------
Typ.
100
16
40
54
57
110
80
0.71
0.35
1.10
40
52
200
130
1.6
13
2100
140
34
42
74
4.0
6.5
80
220
190
160
Max. Units
Conditions
150
IC = 20A
25
nC VCC = 400V
See Fig. 8
60
VGE = 15V
---TJ = 25°C
---ns
IC = 20A, VCC = 480V
165
VGE = 15V, RG = 10Ω
120
Energy losses include "tail" and
---diode reverse recovery.
---mJ See Fig. 9, 10, 11, 18
1.5
---TJ = 150°C, See Fig. 9, 10, 11, 18
---ns
IC = 20A, VCC = 480V
---VGE = 15V, RG = 10Ω
---Energy losses include "tail" and
---mJ diode reverse recovery.
---nH Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
---ƒ = 1.0MHz
60
ns
TJ = 25°C See Fig.
120
TJ = 125°C
14
IF = 15A
6.0
A
TJ = 25°C See Fig.
10
TJ = 125°C
15
VR = 200V
180
nC
TJ = 25°C See Fig.
600
TJ = 125°C
16
di/dt 200A/µs
---A/µs TJ = 25°C
---TJ = 125°C
IRG4PC40UD
Load Current (A)
30
D u ty c ycle: 5 0%
T J = 1 2 5 °C
T sin k = 90 °C
Ga te d rive a s sp e cified
Tu rn -on lo sses in clu de
effe cts of reve rse rec ov ery
P ow e r D issipa tion = 3 5W
20
6 0 % o f ra te d
v o lta g e
10
A
0
0.1
1
10
100
f, F re q u e n cy (kH z )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
TJ = 25°C
T J = 150°C
10
V G E = 15V
20µs PULSE WIDTH A
1
0.1
1
VC E , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
10
100
TJ = 150°C
T J = 25°C
10
V C C = 10V
5µs PULSE WIDTH A
1
4
6
8
10
VG E , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
12
IRG4PC40UD
2.5
V G E = 15V
V C E , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A)
40
30
20
10
A
0
25
50
75
100
125
V G E = 15V
80µs PULSE WIDTH
I C = 40A
2.0
I C = 20A
1.5
I C = 10A
A
1.0
150
-60
TC , Case Temperature (°C)
-40
-20
0
20
40
60
80
100 120
140 160
T J , Junction Temperature (°C)
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Therm al Response (Z th JC )
1
D = 0 .5 0
0.2 0
0 .1
0.1 0
PD M
0 .05
0.0 2
t
SIN G LE P UL SE
(T H ER M A L R E SP O NS E )
t2
N o te s:
1 . D u ty fa c to r D = t
0.0 1
0 .0 1
0 .0 0 0 0 1
1
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
10
IRG4PC40UD
20
V GE =
C ie s =
C re s =
C oes =
0V,
f = 1M H z
C ge + C gc , Cc e S H O R T E D
C gc
C ce + C gc
V GE , G a te-to -Em itter V oltage (V )
C , C apa cita nce (pF )
4000
C ie s
3000
2000
C o es
C re s
1000
1
10
16
12
8
4
A
0
A
0
V C E = 40 0 V
IC = 20A
0
100
20
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
= 480V
= 15V
= 25°C
= 20A
1.6
1.4
1.2
A
1.0
0
10
20
30
40
50
R G , Gate Resistance ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
80
100
120
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VC C
VG E
TC
IC
60
Q g , Total G ate C ha rge (nC )
V C E , C ollector-to-Em itter V olta ge (V)
1.8
40
60
R G = 10Ω
V G E = 15V
V C C = 480V
I C = 40A
I C = 20A
1
I C = 10A
A
0.1
-60
-40
-20
0
20
40
60
80
100
120 140
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
160
IRG4PC40UD
4.0
1000
= 10 Ω
= 150°C
= 480V
= 15V
I C , C ollector-to-E m itter Current (A )
RG
TC
V CC
V GE
3.0
2.0
1.0
A
0.0
0
10
20
30
40
VGGE E= 2 0V
T J = 125 °C
100
S A FE O P E R A TIN G A R E A
10
1
1
50
10
100
V C E , Collecto r-to-E m itter V oltage (V )
I C , Collector-to-Emitter Current (A)
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
Instantan eous Forward C urren t - I F (A )
Total Switching Losses (mJ)
5.0
10
TJ = 15 0 °C
TJ = 12 5 °C
TJ = 2 5 °C
1
0.8
1.2
1.6
2.0
2.4
Fo rwa rd V o ltag e Drop - V FM (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
1000
IRG4PC40UD
100
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
V R = 200V
T J = 125°C
T J = 25°C
80
I IR R M - (A )
t rr - (ns)
I F = 3 0A
I F = 30A
60
I F = 15A
I F = 15 A
10
I F = 5.0A
40
I F = 5.0A
20
100
di f /dt - (A/µs)
1
100
1000
1000
d i f /d t - (A /µ s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
1000
800
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
di(rec)M /d t - (A /µs)
600
Q R R - (nC )
I F = 3 0A
400
I F = 15 A
I F = 5 .0A
I F = 5 .0A
I F = 1 5A
I F = 30 A
200
0
100
d i f /d t - (A /µ s)
Fig. 16 - Typical Stored Charge vs. dif/dt
1000
100
100
1000
di f /dt - (A /µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
IRG4PC40UD
90% Vge
+Vge
Same ty pe
device as
D .U.T.
Vce
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
430µF
80%
of Vce
D .U .T.
td (o ff)
tf
Eoff =
∫
t1 + 5 µ S
V c e ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id d t
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
E o n = V ce ie d t
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
∫
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
IRG4PC40UD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test
Circuit
Figure 20. Pulsed Collector Current
Test Circuit
IRG4PC40UD
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 10Ω (figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
Case Outline — TO-247AC
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 ( .0 1 0 )
1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-
-D-
M
D B M
-A5 .5 0 (.2 17 )
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
2X
1
2
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2.5 0 ( .0 8 9)
1.5 0 ( .0 5 9)
4
5.5 0 (.2 1 7)
4.5 0 (.1 7 7)
LEAD
1234-
3
-C-
*
1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )
2 .4 0 (.0 9 4 )
2 .0 0 (.0 7 9 )
2X
5 .4 5 (.2 1 5 )
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
3X
1 .4 0 ( .0 56 )
1 .0 0 ( .0 39 )
0.2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
NOTE S:
1 D IM E N S IO N S & T O LE R A N C IN G
P E R A N S I Y 14 .5M , 1 98 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M IL LIM E T E R S (IN C H E S ).
4 C O N F O R M S T O J E D E C O U T L IN E
T O -2 4 7A C .
*
A S S IG N M E N T S
GAT E
COLLECTO R
E M IT T E R
COLLECTO R
LO N G E R LE A D E D (2 0m m )
V E R S IO N A V A IL A B L E (T O -2 47 A D )
T O O R D E R A D D "-E " S U F F IX
TO PAR T NUM BER
0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )
3X
C A S
CO NF O RM S TO J EDEC O U TL IN E TO -2 47AC (T O -3P)
D im e n s io n s in M illim e te rs a n d (In c h e s )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
4/97