PD 91464B IRG4PC40FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package VCES = 600V VCE(on) typ. = 1.50V G @VGE = 15V, IC = 27A E n-cha nn el Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 49 27 200 200 15 200 ± 20 160 65 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ------------------------- ----------0.24 ----6 (0.21) 0.77 1.7 -----40 ------ Units °C/W g (oz) 1 12/30/00 IRG4PC40FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 VGE(th) ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance T 9.2 Zero Gate Voltage Collector Current ---ICES ---V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.70 ---- V/°C 1.50 1.7 1.85 ---V 1.56 ------- 6.0 -12 ---- mV/°C 12 ---S ---- 250 µA ---- 3500 1.3 1.7 V 1.2 1.6 ---- ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 27A VGE = 15V IC = 49A See Fig. 2, 5 IC = 27A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 27A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 15A See Fig. 13 IC = 15A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Q rr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. ---------------------------------------------------------------------------------- Typ. 100 15 35 63 32 230 170 0.95 2.01 2.96 63 33 350 310 4.7 13 2200 140 29 42 74 4.0 6.5 80 220 188 160 Max. Units Conditions 150 IC = 27A 23 nC VCC = 400V See Fig. 8 53 VGE = 15V ---TJ = 25°C ---ns IC = 27A, VCC = 480V 350 VGE = 15V, RG = 10Ω 250 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 4.0 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 10Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 60 ns TJ = 25°C See Fig. 120 TJ = 125°C 14 IF = 15A 6.0 A TJ = 25°C See Fig. 10 TJ = 125°C 15 VR = 200V 180 nC TJ = 25°C See Fig. 600 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 www.irf.com IRG4PC40FD 40 Duty c ycle: 5 0% TJ = 1 25°C Tsink = 90°C G ate driv e as spe cified Turn-o n losse s include effe cts of rev erse reco very P ow er D issipation = 35W Load Current (A) 30 6 0 % o f ra te d v olta g e 20 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 I C , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 1000 T J = 25°C 100 TJ = 15 0°C 10 V G E = 15V 20µs PU LSE W ID TH A 1 1 10 VCE , Collec tor-to-Em itter V oltage (V ) Fig. 2 - Typical Output Characteristics www.irf.com 100 T J = 150°C T J = 25°C 10 V C C = 50V 5µs PULSE WIDTH A 1 5 6 7 8 9 10 11 12 VG E , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC40FD V G E = 15 V V C E , Collector-to-Emitter Voltage (V) M axim um D C C ollector C urrent (A ) 50 40 30 20 10 0 2.5 V G E = 15V 80µs PULSE WIDTH I C = 54A 2.0 I C = 27A 1.5 I C = 14A A 1.0 25 50 75 100 125 150 -60 T C , C ase Tem perature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Therm al Response (Z th JC ) 1 D = 0 .5 0 0.2 0 0 .1 0.1 0 PD M 0 .05 0.0 2 t SIN G LE P UL SE (T H ER M A L R E SP O NS E ) t2 N o te s: 1 . D u ty fa c to r D = t 0.0 1 0 .0 1 0 .0 0 0 0 1 1 1 / t2 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC40FD VGE = 0V Cies = Cge + Cgc + Cce Cres = Cce C , Capacitance ( pF) 20 f = 1 MHz SHORTED V G E , Gate-to-Emitter Voltage (V) 4000 Coes = Cce + Cgc 3000 C ies 2000 C oe s 1000 C res A 0 1 10 VC E = 400V I C = 27A 16 12 8 4 A 0 0 100 20 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 100 = 480V = 15V = 25°C = 27A 3.2 3.1 A 3.0 0 10 20 30 40 50 R G , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 100 120 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switchig Losses (mJ) Total Switchig Losses (mJ) VC C VG E TJ IC 60 Q g , Total Gate Charge (nC) VC E , Collector-to-Emitter Voltage (V) 3.3 40 60 R G = 10 Ω V G E = 15V V C C = 480V 10 I C = 54A I C = 27A I C = 14A 1 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC40FD RG TJ V CC V GE 10 = = = = 1000 10 Ω 150°C 480V 15V I C , C ollecto r-to-Emitte r C urre nt (A) Total Switchig Losses (mJ) 12 8 6 4 2 A 0 0 10 20 30 40 50 VGGE E= 2 0V T J = 125 °C 100 S A F E O P E R A TIN G A R E A 10 1 1 60 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) I C , Collector-to-Emitter Current (A) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Instantan eous Forward C urren t - I F (A ) 100 10 TJ = 15 0 °C TJ = 12 5 °C TJ = 2 5 °C 1 0.8 1.2 1.6 2.0 2.4 Fo rwa rd V o ltag e Drop - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC40FD 100 100 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C V R = 200V T J = 125°C T J = 25°C 80 I IR R M - (A ) t rr - (ns) I F = 3 0A I F = 30A 60 I F = 15A I F = 15 A 10 I F = 5.0A 40 I F = 5.0A 20 100 di f /dt - (A/µs) 1 100 1000 1000 d i f /d t - (A /µ s ) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1000 800 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C di(rec)M /d t - (A /µs) 600 Q R R - (nC ) I F = 3 0A 400 I F = 15 A I F = 5 .0A I F = 5 .0A I F = 1 5A I F = 30 A 200 0 100 d i f /d t - (A /µ s) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com 1000 100 100 1000 di f /dt - (A /µs) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC40FD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 9 0 % Ic 10% Vce Ic 5 % Ic 430µF 80% of Vce D .U .T. td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id d t tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 E o n = V ce ie d t t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 V d id d t t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PC40FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PC40FD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 10Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline TO-247AC 3 .6 5 ( .1 4 3 ) 3 .5 5 ( .1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 1 7 ) 4 .5 0 (.1 7 7 ) LEAD 1234- 3 -C- * 1 4 .80 ( .58 3) 1 4 .20 ( .55 9) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.21 5) 2X 4.3 0 (.1 70) 3.7 0 (.1 45) 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) N OTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . * C A S 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 (.1 0 2 ) 2 .2 0 (.0 8 7 ) A S S IG N M E N T S GATE C OLLE C TO R E M IT T E R C OLLE C TO R L O N G E R L E A D E D (2 0 m m ) V E R S IO N A V A IL A B L E (T O -2 4 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s io n s in M illim ete rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com