PD -95225 IRG4PC50FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack IGBT Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free C VCES = 600V VCE(on) typ. = 1.45V G @VGE = 15V, IC = 39A E n-cha n ne l Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 70 39 280 280 25 280 ± 20 200 78 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ------------------------- ----------0.24 ----6 (0.21) 0.64 0.83 -----40 ------ Units °C/W g (oz) 04/29/04 IRG4PC50FDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ---Forward Transconductance T 21 Zero Gate Voltage Collector Current ------Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---- Typ. ---0.62 1.45 1.79 1.53 ----14 30 ------1.3 1.2 ---- Max. Units Conditions ---V VGE = 0V, IC = 250µA ---- V/°C VGE = 0V, IC = 1.0mA 1.6 IC = 39A VGE = 15V ---V IC = 70A See Fig. 2, 5 ---IC = 39A, TJ = 150°C 6.0 VCE = VGE, IC = 250µA ---- mV/°C VCE = VGE, IC = 250µA ---S VCE = 100V, IC = 39A 250 µA VGE = 0V, VCE = 600V 6500 VGE = 0V, VCE = 600V, TJ = 150°C 1.7 V IC = 25A See Fig. 13 1.5 IC = 25A, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. ---------------------------------------------------------------------------------- Typ. 190 28 65 55 25 240 140 1.5 2.4 3.9 59 27 400 260 6.5 13 4100 250 49 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V ---TJ = 25°C ---ns IC = 39A, VCC = 480V 360 VGE = 15V, RG = 5.0Ω 210 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 5.0 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 39A, VCC = 480V ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 IF = 25A 10 A TJ = 25°C See Fig. 15 VR = 200V 15 TJ = 125°C 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt 200A/µs ---A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 www.irf.com IRG4PC50FDPbF 50 D uty c yc le: 50% T J = 125°C T sink = 90°C G ate drive as specified Turn-on loss es include effects of reverse rec overy Po w e r D is s ip a tio n = 4 0 W Load Current ( A ) 40 30 6 0% of rate d vo lta g e 20 10 A 0 0.1 1 10 100 f, Frequenc y (k Hz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 T J = 1 5 0°C 10 T J = 2 5 °C VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 1 0.1 1 10 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com I C , C o lle cto r-to -E m itte r C u rre n t (A ) I C , C o lle c to r-to -E m itte r C u rre n t (A ) 1000 100 T J = 1 5 0 °C TJ = 2 5 °C 10 VC C = 5 0 V 5 µ s P U L S E W ID T H A 1 5 6 7 8 9 10 11 12 VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50FDPbF 2.5 V G E = 15V V C E , C olle c to r-to-E m itte r V olta ge (V ) M axim um D C C ollector C urrent (A ) 70 60 50 40 30 20 10 0 V GE = 15V 8 0 µ s P U L S E W ID T H I C = 78A 2.0 IC = 39 A 1.5 I C = 20A A 1.0 25 50 75 100 125 150 -60 T C , C as e Te m p e ra ture (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 T J , J u n c tio n T e m p e ra tu re (°C ) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Therm al R e spo nse (Z th JC ) 1 D = 0.50 0 .2 0 0.1 0 .1 0 PD M 0 .05 t 0 .0 2 0.01 0.00001 t2 S ING L E P UL S E (TH E RM A L R E S PO NS E) 0 .0 1 1 N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 . P e a k TJ = P D M x Z th JC + T C 0.000 1 0.001 0.01 0.1 1 10 t 1 , R e c ta n gu la r P u ls e D u ratio n (s ec ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50FDPbF C, Capacitance (pF) 20 SHORTED V G E , G a te -to -E m itte r V o lta ge (V ) VGE = 0V f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc 8000 6000 C ies 4000 Co e s 2000 C res A 0 1 10 VCE = 40 0 V IC = 39A 16 12 8 4 A 0 100 0 40 V C E, Collector-to-Emitter Voltage (V) Total Switchig Losses (mJ) Total Switchig Losses (mJ) 100 4.50 4.00 A 0 10 20 30 40 50 R G , G ate R esistance ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V C C = 480V V G E = 15V T J = 25°C I C = 39A 3.50 120 Q g , T o ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 5.00 80 60 R G = 5.0 Ω V G E = 15V V C C = 480V I C = 78A 10 I C = 39A I C = 20A A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Tem perature (°C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50FDPbF RG TJ V CC V GE 1000 = 5.0 Ω = 150°C = 480V = 15V I C , C o lle c to r-to -E m itte r C u rre n t (A ) Total Switchig Losses (mJ) 16 12 8 4 A 0 0 20 40 60 VGGE E= 20V T J = 12 5°C S A FE O P E R A TIN G A R E A 100 10 1 80 1 10 100 1000 V C E , C o lle cto r-to-E m itte r V olta g e (V ) I C , Collector-to-Em itter Current (A ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current In sta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 100 TJ = 150 °C TJ = 125 °C 10 TJ = 25 °C 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC50FDPbF 100 140 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C V R = 200V T J = 125°C T J = 25°C 120 I IR R M - (A ) t rr - (ns) 100 I F = 50A 80 I F = 25A I F = 5 0A I F = 25A 10 I F = 10A IF = 10A 60 40 20 100 1 100 1000 di f /dt - (A/µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 d i f /d t - (A /µ s) Fig. 15 - Typical Recovery Current vs. dif/dt 1500 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C d i(re c )M /d t - (A /µ s) Q R R - (n C ) 1200 900 I F = 50A 600 I F = 2 5A 1000 I F = 10A I F = 25A 300 I F = 10A 0 100 d i f /d t - (A /µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com I F = 50A 1000 100 100 d i f /d t - (A /µ s ) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50FDPbF 90% V ge +V ge Same type device as D .U.T. V ce Ic 90% Ic 10% V ce Ic 5% Ic 430µF 80% of Vce D .U .T. td (off) tf E off = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1+5µ S V ce ic dt t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O LT A G E D .U .T . 10% + V g trr Ic Q rr = D U T V O LT A G E AND CURRENT Vce 10% Ic Ipk 90% Ic tr td(on) V pk 10% Irr Vcc Irr Ic D IO D E R E C O V E R Y W AVEFORMS 5% V c e t1 t2 E on = V c e ie dt t1 ∫ t2 E rec = D IO D E R E V E R S E RECOVERY ENERG Y t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ +V g tx 10% V c c Vcc trr id dt tx ∫ t4 V d id dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PC50FDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O LT A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* R L= 0 - 480V 480V 4 X IC @25°C 50V 600 0µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PC50FDPbF Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information E XAMPL E : T HIS IS AN IR F PE 30 WIT H AS S E MB LY L OT CODE 5657 AS S E MB L E D ON WW 35, 2000 IN T H E AS S E MB L Y L INE "H" N ote: "P" in assem bly line position indicates "Lead-Free" INT E R NAT IONAL R E CT IF IE R L OGO AS S E MB LY L OT CODE PART NUMB E R IR F PE 30 56 035H 57 DAT E CODE YE AR 0 = 2000 WE E K 35 L INE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/