IRF IRG4BC20UD

PD 91449B
IRG4BC20UD
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFRED ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-220AB package
VCES = 600V
VCE(on) typ. = 1.85V
G
@VGE = 15V, IC = 6.5A
E
n-cha nn el
Benefits
• Generation -4 IGBTs offer highest efficiencies
available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs. Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
V
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
-------------------------
----------0.50
----2 (0.07)
2.1
3.5
-----80
------
Units
°C/W
g (oz)
1
3/21/2000
IRG4BC20UD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown VoltageS 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on)
Collector-to-Emitter Saturation Voltage
---------VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe
Forward Transconductance T
1.4
ICES
Zero Gate Voltage Collector Current
------VFM
Diode Forward Voltage Drop
------IGES
Gate-to-Emitter Leakage Current
---V(BR)CES
Typ. Max. Units
------V
0.69 ---- V/°C
1.85 2.1
2.27 ---V
1.87 ------- 6.0
-11 ---- mV/°C
4.3 ---S
---- 250
µA
---- 1700
1.4 1.7
V
1.3 1.6
---- ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
IC = 13A
See Fig. 2, 5
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
----------------------------------------------------------------------------------
Typ. Max. Units
Conditions
27
41
IC = 6.5A
4.5 6.8
nC
VCC = 400V
See Fig. 8
10
16
VGE = 15V
39
---TJ = 25°C
15
---ns
IC = 6.5A, VCC = 480V
93 140
VGE = 15V, RG = 50Ω
110 170
Energy losses include "tail" and
0.16 ---diode reverse recovery.
0.13 ---mJ See Fig. 9, 10, 11, 18
0.29 0.3
38
---TJ = 150°C, See Fig. 9, 10, 11, 18
17
---ns
IC = 6.5A, VCC = 480V
100 ---VGE = 15V, RG = 50Ω
220 ---Energy losses include "tail" and
0.49 ---mJ diode reverse recovery.
7.5 ---nH
Measured 5mm from package
530 ---VGE = 0V
39
---pF
VCC = 30V
See Fig. 7
7.4 ---ƒ = 1.0MHz
37
55
ns
TJ = 25°C See Fig.
55
90
TJ = 125°C
14
IF = 8.0A
3.5 5.0
A
TJ = 25°C See Fig.
4.5 8.0
TJ = 125°C
15
VR = 200V
65 138
nC
TJ = 25°C See Fig.
124 360
TJ = 125°C
16
di/dt 200A/µs
240 ---A/µs TJ = 25°C See Fig.
210 ---TJ = 125°C
17
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IRG4BC20UD
12
D u ty c y c le : 5 0 %
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d riv e a s s p e c ifie d
T u rn -o n los s e s in c lu d e
e ffe c ts o f re v e rs e r e c o v e ry
P ow er Diss ip ation = 13W
L oa d C u rre n t (A )
10
8
6 0% o f ra te d
v oltag e
6
4
2
A
0
0.1
1
10
100
f, F re q u e n c y (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
I C , C ollec tor-to-E m itte r C u rre nt (A )
I C , Collector-to-Emitter Current (A)
100
T J = 25°C
T J = 150°C
10
1
V G E = 15V
20µs PULSE WIDTH
0.1
0.1
1
Fig. 2 - Typical Output Characteristics
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A
TJ = 25 °C
1
V C C = 10 V
5 µs P U L S E W IDTH
0.1
10
VC E , Collector-to-Emitter Voltage (V)
TJ = 1 5 0°C
10
4
6
8
10
A
12
VG E , Ga te -to-Em itter Volta ge (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20UD
2.6
V G E = 15 V
V C E , C ollector-to-E m itter V oltag e (V)
M aximum D C Collector Current (A )
14
12
10
8
6
4
2
V G E = 1 5V
8 0 µs P U L S E W ID TH
I C = 1 3A
2.2
1.8
I C = 6 .5A
1.4
I C = 3.3 A
A
1.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120
140 160
T J , J u n c tio n Te m p e ra tu re (°C )
T C , C ase Tem perature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Therm al Response (Z thJ C )
10
1
D = 0.50
0 .2 0
0 .10
PD M
0.0 5
0 .1
0.0 2
0 .01
t
SIN G LE P U LS E
(T H ER M AL R E SP O N SE )
t2
N o te s :
1 . D u ty fa c to r D = t
0 .0 1
0 .0 0 0 0 1
1
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20UD
V GE =
C ie s =
C re s =
C oes =
800
20
0V ,
f = 1M H z
C g e + C g c , C ce S H O R TE D
C gc
C ce + C g c
V G E , G a te -to -E m itte r V o lta g e (V )
C, Ca pac itanc e (p F)
1000
C ie s
600
C oes
400
C re s
200
A
0
1
10
VCE = 400V
I C = 6 .5 A
16
12
8
4
A
0
0
100
5
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
10
= 480V
= 15V
= 25 °C
= 6 .5A
0.31
0.30
A
0.29
0
10
20
30
40
50
R G , G a te R e sista n c e ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total S witching Los se s (m J)
Total Switching Losses (m J)
V CC
VGE
TJ
IC
15
Q g , T o ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.32
10
60
R G = 50 Ω
V GE = 15V
V CC = 4 8 0 V
IC = 1 3 A
1
I C = 6 .5 A
I C = 3 .3 A
A
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC20UD
RG
TJ
V CC
V GE
1000
= 50 Ω
= 1 5 0 °C
= 480V
= 15V
I C , C ollecto r-to -Em itter Cu rrent (A)
Total Switc hing Losses (mJ )
1.2
0.9
0.6
0.3
A
0.0
0
2
4
6
8
10
12
VGGE E= 2 0V
T J = 12 5 °C
100
S A FE O P E R A TIN G A R E A
10
1
0 .1
1
14
10
100
1000
V C E , Collecto r-to-E m itter V oltage (V )
I C , C o lle cto r-to -E m itte r C u rre n t (A )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
100
10
TJ = 1 50 °C
TJ = 1 25 °C
TJ = 25 °C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20UD
100
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
80
I F = 8 .0A
I IR R M - (A )
t rr - (ns)
IF = 16 A
60
I F = 1 6A
10
IF = 8 .0 A
40
I F = 4.0 A
I F = 4 .0 A
20
0
100
1
100
1000
d i f /d t - (A /µ s)
1000
di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
di(rec)M/dt - (A /µ s)
Q R R - (nC )
400
300
I F = 16 A
200
I F = 8 .0A
I F = 4 .0A
1000
I F = 8.0 A
I F = 16 A
100
IF = 4.0 A
0
100
di f /dt - (A /µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
100
100
1000
di f /dt - (A /µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4BC20UD
90% Vge
+Vge
Same ty pe
device as
D .U.T.
Vce
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
430µF
80%
of Vce
D .U .T.
td (o ff)
tf
Eoff =
∫
t1 + 5 µ S
V c e ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
trr
id d t
tx
∫
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
E o n = V ce ie d t
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC20UD
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
1000V
D.U.T.
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test
Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4BC20UD
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature
(figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
Case Outline — TO-220AB
2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )
1 0 .5 4 (.41 5 )
1 0 .2 9 (.40 5 )
4
3.78 (.149)
3.54 (.139)
-A-
1.32 (.052)
1.22 (.048)
6.47 (.255 )
6.10 (.240 )
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )
1.15 (.045)
M IN
1
2
1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )
N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 2 0 A B .
LEAD
1234-
3
3X
1 .4 0 (.0 5 5 )
3 X 1 .1 5 (.0 4 5 )
-B -
4.69 (.185)
4.20 (.165)
3.96 (.160)
3.55 (.140)
A S S IG N M E N T S
GA TE
C O L LE C T O R
E M IT T E R
C O L LE C T O R
4.06 (.160 )
3.55 (.140 )
3X
0.93 (.037)
0.69 (.027)
0 .3 6 (.01 4 )
M B A M
2 .5 4 (.1 0 0)
3X
0.55 (.022)
0.46 (.018)
2.92 (.115)
2.64 (.104)
2X
CONFORMS TO JEDEC OUTLINE TO-220AB
D im e ns io ns in M illim e ters a nd (In c he s )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
10
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