IRF IRG4BC20UD-S

PD- 94077
IRG4BC20UD-S
UltraFast CoPack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• UltraFast: Optimized for high operating frequencies
8-40 kHz in hard switching, >200kHz in resonant
mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than
Generation 3
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard D2Pak package
VCES = 600V
VCE(on) typ. = 1.85V
G
@VGE = 15V, IC = 6.5A
E
N-channel
Benefits
• Generation 4 IGBTs offers highest efficiencies
available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBTs . Minimized recovery characteristics require
less/no snubbing
• Designed to be a "drop-in" replacement for
equivalent industry-standard Generation 3 IR IGBTs
D2Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
Units
600
13
6.5
52
52
7.0
52
± 20
60
24
-55 to +150
V
A
V
W
°C
°C
300 (0.063 in. (1.6mm) from case)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.5
–––
1.44
2.1
–––
40
–––
Units
°C/W
g (oz)
1
1/12/01
IRG4BC20UD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)CES
Collector-to-Emitter Breakdown Voltageƒ 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage –––
VCE(on)
Collector-to-Emitter Saturation Voltage –––
–––
–––
VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage –––
gfe
Forward Transconductance „
1.4
ICES
Zero Gate Voltage Collector Current
–––
–––
VFM
Diode Forward Voltage Drop
–––
–––
IGES
Gate-to-Emitter Leakage Current
–––
Typ. Max. Units
––– –––
V
0.69 ––– V/°C
1.85 2.1
2.27 –––
V
1.87 –––
––– 6.0
-11 ––– mV/°C
4.3 –––
S
––– 250
µA
––– 1700
1.4 1.7
V
1.3 1.6
––– ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 6.5A
VGE = 15V
IC = 13A
See Fig. 2, 5
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M /dt
Diode Peak Rate of Fall of Recovery
During tb
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
27
4.5
10
39
15
93
110
0.16
0.13
0.29
38
17
100
220
0.49
7.5
530
39
7.4
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
41
IC = 6.5A
6.8
nC
VCC = 400V
See Fig. 8
16
VGE = 15V
–––
TJ = 25°C
–––
ns
IC = 6.5A, VCC = 480V
140
VGE = 15V, RG = 50Ω
170
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ See Fig. 9, 10, 11, 18
0.3
–––
TJ = 150°C, See Fig. 9, 10, 11, 18
–––
ns
IC = 6.5A, VCC = 480V
–––
VGE = 15V, RG = 50Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
–––
nH
Measured 5mm from package
–––
VGE = 0V
–––
pF
VCC = 30V
See Fig. 7
–––
ƒ = 1.0MHz
55
ns
TJ = 25°C See Fig.
90
TJ = 125°C
14
IF = 8.0A
5.0
A
TJ = 25°C See Fig.
8.0
TJ = 125°C
15
VR = 200V
138
nC
TJ = 25°C See Fig.
360
TJ = 125°C
16
di/dt 200A/µs
––– A/µs TJ = 25°C See Fig.
–––
TJ = 125°C
17
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IRG4BC20UD-S
12
D u ty c y c le : 5 0 %
T J = 1 2 5 °C
T s in k = 9 0 °C
G a te d riv e a s s p e c ifie d
T u rn -o n los s e s in c lu d e
e ffe c ts o f re v e rs e r e c o v e ry
P ow er Diss ip ation = 13W
L oa d C u rre n t (A )
10
8
6 0% o f ra te d
v oltag e
6
4
2
A
0
0.1
1
10
100
f, F re q u e n c y (k H z )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
I C , C ollec tor-to-E m itte r C u rre nt (A )
I C , Collector-to-Emitter Current (A)
100
T J = 25°C
T J = 150°C
10
1
V G E = 15V
20µs PULSE WIDTH
0.1
0.1
1
Fig. 2 - Typical Output Characteristics
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A
TJ = 25 °C
1
V C C = 10 V
5 µs P U L S E W IDTH
0.1
10
VC E , Collector-to-Emitter Voltage (V)
TJ = 1 5 0°C
10
4
6
8
10
A
12
VG E , Ga te -to-Em itter Volta ge (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20UD-S
14
2.6
V C E , C ollector-to-E m itter V oltag e (V)
V G E = 15 V
M aximum D C Collector Current (A )
12
10
8
6
4
2
V G E = 1 5V
8 0 µs P U L S E W ID TH
I C = 1 3A
2.2
1.8
I C = 6 .5A
1.4
I C = 3.3 A
A
1.0
0
25
50
75
100
125
-60
150
-40
-20
0
20
40
60
80
100 120
140 160
T J , J u n c tio n Te m p e ra tu re (°C )
T C , C ase Tem perature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Therm al Response (Z thJ C )
10
1
D = 0.50
0 .2 0
0 .10
PD M
0.0 5
0 .1
0.0 2
0 .01
t
SIN G LE P U LS E
(T H ER M AL R E SP O N SE )
t2
N o te s :
1 . D u ty fa c to r D = t
0 .0 1
0 .0 0 0 0 1
1
1
/ t
2
2 . P e a k TJ = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R ectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20UD-S
V GE =
C ie s =
C re s =
C oes =
800
20
0V ,
f = 1M H z
C g e + C g c , C ce S H O R TE D
C gc
C ce + C g c
V G E , G a te -to -E m itte r V o lta g e (V )
C, Ca pac itanc e (p F)
1000
C ie s
600
C oes
400
C re s
200
A
0
1
10
VCE = 400V
I C = 6 .5 A
16
12
8
4
A
0
0
100
5
V C E , C o lle c to r-to -E m itte r V o lta g e (V )
10
= 480V
= 15V
= 25 °C
= 6 .5A
0.31
0.30
A
0.29
0
10
20
30
40
50
R G , G a te R e sista n c e ( Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total S witching Los se s (m J)
Total Switching Losses (m J)
V CC
VGE
TJ
IC
15
Q g , T o ta l G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.32
10
60
R G = 50 Ω
V GE = 15V
V CC = 4 8 0 V
IC = 1 3 A
1
I C = 6 .5 A
I C = 3 .3 A
A
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ , J u n ctio n T e m p e ra tu re (°C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC20UD-S
1000
= 50 Ω
= 1 5 0 °C
= 480V
= 15V
I C , C ollecto r-to -Em itter Cu rrent (A)
RG
TJ
V CC
V GE
0.9
0.6
0.3
A
0.0
0
2
4
6
8
10
12
VGGE E= 2 0V
T J = 12 5 °C
100
S A FE O P E R A TIN G A R E A
10
1
0 .1
1
14
10
100
1000
V C E , Collecto r-to-E m itter V oltage (V )
I C , C o lle cto r-to -E m itte r C u rre n t (A )
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
100
In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A )
Total Switc hing Losses (mJ )
1.2
10
TJ = 1 50 °C
TJ = 1 25 °C
TJ = 25 °C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
F o rw a rd V o lta g e D ro p - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20UD-S
100
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
80
I F = 8 .0A
I IR R M - (A )
t rr - (ns)
IF = 16 A
60
I F = 1 6A
10
IF = 8 .0 A
40
I F = 4.0 A
I F = 4 .0 A
20
0
100
1
100
1000
d i f /d t - (A /µ s)
1000
di f /dt - (A /µs)
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
500
10000
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
di(rec)M/dt - (A /µ s)
Q R R - (nC )
400
300
I F = 16 A
200
I F = 8 .0A
I F = 4 .0A
1000
I F = 8.0 A
I F = 16 A
100
IF = 4.0 A
0
100
di f /dt - (A /µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
100
100
1000
di f /dt - (A /µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4BC20UD-S
Same ty pe
device as
D .U.T.
90%
10%
Vge
430µF
80%
of Vce
VC
D .U .T.
90%
td(off)
10%
IC 5%
tf
tr
t d(on)
t=5µs
E on
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
E off
E ts = (Eon +Eoff )
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id d t
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
E o n = V ce ie d t
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC20UD-S
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4BC20UD-S
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
3
15 .4 9 (.6 10)
14 .7 3 (.5 80)
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
3X
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
10
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRG4BC20UD-S
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 (.16 1 )
3 .9 0 (.15 3 )
F E ED D IR E C TIO N 1 .8 5 ( .0 7 3 )
1.60 (.06 3)
1.50 (.05 9)
1 1.60 (.457 )
1 1.40 (.449 )
1 .6 5 ( .0 6 5 )
0.3 68 (.01 45 )
0.3 42 (.01 35 )
1 5.42 (.60 9)
1 5.22 (.60 1)
2 4.30 (.9 57 )
2 3.90 (.9 41 )
TR L
10.90 (.42 9)
10.70 (.42 1)
1.75 (.0 69 )
1.25 (.0 49 )
4.72 (.1 36 )
4.52 (.1 78 )
1 6.10 (.6 3 4)
1 5.90 (.6 2 6)
F E E D D IR E C T IO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
33 0.00
(14.173)
M A X.
60.00 (2.36 2)
MIN .
N OT ES :
1. C O MF OR MS TO EIA-418.
2. C O NTR O LLIN G DIM EN SIO N: M ILLIM ET ER.
3. D IM ENSIO N M EAS UR ED @ HU B.
4. IN CLU D ES F LAN G E D ISTO RT IO N @ O UT ER ED GE.
26.40 (1.0 39)
24.40 (.96 1)
30.40 (1.197)
M AX.
4
3
Notes:
 Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (Figure 20)
‚ VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (Figure 19)
ƒ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
„ Pulse width 5.0µs, single shot.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.1/01
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