RB070M-30 Diodes Schottky barrier diode RB070M-30 zApplications General rectification (Common cathode dual chip) zLand size figure zDimensions (Unit : mm) 0.1±0.1 0.05 1.2 2.6±0.1 ① zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability 3.5±0.2 3.05 0.85 1.6±0.1 PMDU zStructure 0.9±0.1 0.8±0.1 ROHM : PMDU JEDEC :SOD-123 Manufacture Date zConstruction Silicon epitaxial planar zTaping dimensions (Unit : mm) 1.81±0.1 4.0±0.1 φ1.0±0.1 3.71±0.1 0.25±0.05 8.0±0.2 φ1.55±0.05 1.75±0.1 2.0±0.05 3.5±0.05 4.0±0.1 1.5MAX zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) ∗ Average rectified forward current Forward current surge peak (60Hz 1cyc.) Junction temperature Storage temperature Symbol VRM VR IO IFSM Tj Tstg Limits 30 30 1.5 30 150 −40 to 150 Unit V V A A °C °C ∗ Glass epoxy substrate at the time of assembler, half sine wave at 180°. zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. − − − Typ. 0.37 0.44 9 Max. 0.43 0.49 50 Unit V V µA Conditions IF=0.5A IF=1.5A VR=30V ∗Please pay attention to static electricity when handling. Rev.B 1/3 RB070M-30 Diodes zElectrical characteristic curves 100000 1000 1 Ta=150℃ Ta=25℃ 0.1 Ta=-25℃ 0.01 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 10 0.01 0 100 200 300 400 500 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 600 1 0 5 10 15 20 25 30 0 200 REVERSE CURRENT:IR(uA) 450 440 AVE:441.5mV 430 10 15 20 25 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 160 140 120 100 80 60 AVE:8.828uA 40 420 Ta=25℃ f=1MHz VR=0V n=10pcs 390 380 370 360 350 340 330 AVE:332.6pF 320 20 310 0 300 VF DISPERSION MAP IR DISPERSION MAP 150 Ct DISPERSION MAP AVE:96.0A 50 100 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 100 RESERVE RECOVERY TIME:trr(ns) 20 1cyc Ifsm 10 AVE:9.30ns 5 50 Ifsm 8.3ms 8.3ms 1cyc 0 0 0 30 400 Ta=25℃ VR=30V n=30pcs 180 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=1.5A n=30pcs 460 5 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 470 PEAK SURGE FORWARD CURRENT:IFSM(A) f=1MHz Ta=125℃ 1000 0.001 FORWARD VOLTAGE:VF(mV) Ta=150℃ 10000 Ta=125℃ REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=75℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) 10 1 trr DISPERSION MAP IFSM DISRESION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 Mounted on epoxy board 1000 Ifs IM=10mA Rth(j-a) 100 t 100 50 0 2 IF=0.5A 1ms time 1.5 300us 10 Rth(j-c) 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 0.001 D=1/2 1 DC Sin(θ＝180) 0.5 1 0 0.1 1 FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 150 0.01 0.1 1 10 TIME:t(s) Rth-t CHARACTERISTICS 100 1000 0 1 2 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.B 3 2/3 RB070M-30 Diodes 0.5 Sin(θ＝180) 0.3 D=1/2 0.2 DC 0.1 0A 0V 4 D=1/2 3 DC Io t T VR D=t/T VR=15V Tj=150℃ 2 1 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0.4 REVERSE POWER DISSIPATION:PR (W) 5 5 0A 0V 4 3 DC 2 D=1/2 0 0 10 20 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 30 T VR D=t/T VR=15V Tj=150℃ 1 Sin(θ＝180) Sin(θ＝180) 0 Io t 0 0 25 50 75 100 125 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 150 0 25 50 75 100 125 150 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 No break at 30kV 25 20 15 10 5 AVE:8.70kV 0 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1