FDD8447L 40V N-Channel PowerTrench® MOSFET 40V, 50A, 8.5mΩ Features General Description Max rDS(on) = 8.5mΩ at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application. Max rDS(on) = 11.0mΩ at VGS = 4.5V, ID = 11A Fast Switching RoHS Compliant Applications Inverter Power Supplies D D G G S D -PA K TO -2 52 (TO -252) S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous (Package limited) TC= 25°C -Continuous (Silicon limited) TC= 25°C -Continuous TA= 25°C EAS Drain-Source Avalanche Energy V 57 (Note 1a) 15.2 A 100 A (Note 3) 153 mJ (Note 1a) 3.1 (Note 1b) 1.3 TC= 25°C 44 TA= 25°C TA= 25°C TJ, TSTG ±20 100 Max Pulse Diode Current Power Dissipation Units V 50 -Pulsed IS PD Ratings 40 -55 to +150 Operating and Storage Junction Temperature Range W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 96 2.8 °C/W Package Marking and Ordering Information Device Marking FDD8447L Device FDD8447L ©2008 Fairchild Semiconductor Corporation FDD8447L Rev.C3 Package D-PAK(TO-252) 1 Reel Size 13’’ Tape Width 12mm Quantity 2500 units www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET May 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient 40 V ID = 250µA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 32V, VGS = 0V 1 µA IGSS Gate to Source Leakage Current VGS = ±20V, VGS = 0V ±100 nA 3.0 V mV/°C 35 On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA ∆VGS(th) Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, referenced to 25°C ∆TJ rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance 1.0 1.9 -5 mV/°C VGS = 10V, ID = 14A 7.0 8.5 VGS = 4.5V, ID = 11A 8.5 11.0 VGS = 10V, ID = 14A, TJ=125°C 10.4 14.0 VDS = 5V, ID = 14A mΩ 58 S 1970 pF 250 pF 150 pF 1.27 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz Switching Characteristics 12 21 ns 12 21 ns 38 61 ns Fall Time 9 18 ns Qg(TOT) Total Gate Charge, VGS = 10V 37 52 nC Qg(TOT) Total Gate Charge, VGS = 5V 20 28 nC Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf VDD = 20V, ID = 1A VGS = 10V, RGEN = 6Ω VDD = 20V, ID = 14A VGS = 10V 6 nC 7 nC Drain-Source Diode Characteristics IS Maximum Continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 14A (Note 1a) (Note 2) IF = 14A, di/dt = 100A/µs 2.6 0.8 1.2 A V 22 ns 11 nC Notes: 1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design. ---------------- a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper b. 96°C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3: Starting TJ = 25oC, L = 1mH, IAS = 17.5A, VDD = 40V, VGS = 10V. 4 FDD8447L Rev.C3 2 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted 3 VGS = 10V 80 4.0V 6.0V NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 100 4.5V 5.0V 60 3.5V 40 20 3.0V 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 1.8 3.5V 1.4 4.0V 4.5V 5.0V 6.0V 10.0V 1 0 2.5 Figure 1. On-Region Characteristics 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage ID = 14A VGS = 10V rDS(ON), ON-RESISTANCE (OHM) ID = 7A 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 0.0175 0.015 o TA = 125 C 0.0125 0.01 o TA = 25 C 0.0075 0.005 150 2 Figure 3. On-Resistance Variation with Temperature 1000 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 80 60 40 o -55 C o TA = 125 C 20 o 25 C 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5 Figure 5. Transfer Characteristics FDD8447L Rev.C3 10 VGS = 0V 100 10 1 TA = 125oC 0.1 o 25 C 0.01 -55oC 0.001 0.0001 0 1.5 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 1 20 0.02 1.6 NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.2 0.6 0 ID, DRAIN CURRENT (A) VGS = 3.0V 2.6 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics 3000 VDS = 10V ID = 14A 30V 8 20V 6 4 2 2000 Ciss 1500 1000 Coss 500 Crss 0 0 0 10 20 Qg, GATE CHARGE (nC) 30 40 0 Figure 7. Gate Charge Characteristics 40 100 P(pk), PEAK TRANSIENT POWER (W) 100 100µs RDS(ON) LIMIT 1ms 10ms 10 DC 1 1s 100ms VGS = 10V SINGLE PULSE o RθJA = 96 C/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.001 100 Figure 9. Maximum Safe Operating Area 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 10. Single Pulse Maximum Power Dissipation 100 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 I(AS), AVALANCHE CURRENT (A) I(pk), PEAK TRANSIENT CURRENT (A) 10 20 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance Characteristics 1000 ID, DRAIN CURRENT (A) f = 1MHz VGS = 0 V 2500 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 60 o TJ = 25 C 10 40 20 0 0.0001 1 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 0.1 1000 Figure 11. Single Pulse Maximum Peak Current FDD8447L Rev.C3 1 tAV, TIME IN AVANCHE(ms) 10 Figure 12. Unclamped Inductive Switching Capability 4 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96°C/W 0.2 0.1 0.1 P(pk) 0.05 0.02 0.01 0.001 0.0001 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD8447L Rev.C3 5 www.fairchildsemi.com FDD8447L 40V N-Channel PowerTrench® MOSFET Typical Characteristics The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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