FAIRCHILD FDC658AP

FDC658AP
Single P-Channel Logic Level PowerTrench® MOSFET
-30V, -4A, 50mΩ
General Description
Features
This P-Channel Logic Level MOSFET is produced using
Fairchild's advanced PowerTrench process. It has been
optimized for battery power management applications.
„ Max rDS(on) = 50 mΩ @ VGS = -10 V, ID = -4A
„ Max rDS(on) = 75 mΩ @ VGS = -4.5 V, ID = -3.4A
Applications
„ Low Gate Charge
„ High performance trench technology for extremely low
rDS(on)
„ Battery management
„ Load switch
„ RoHS Compliant
„ Battery protection
„ DC/DC conversion
D
PIN 1
D
S
D
D
G
1
6
2
5
3
4
SuperSOTTM-6
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain-Source Voltage
Parameter
VGS
Gate-Source Voltage
Drain Current - Continuous
ID
(Note 1a)
TJ, TSTG
Units
V
±25
V
-4
A
-20
- Pulsed
Maximum Power dissipation
PD
Ratings
-30
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
1.6
W
0.8
-55 to +150
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
78
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
30
°C/W
Package Marking and Ordering Information
Device Marking
.58A
Device
FDC658AP
©2006 Fairchild Semiconductor Corporation
FDC658AP Rev. B (W)
Reel Size
7inch
1
Tape Width
8mm
Quantity
3000 units
www.fairchildsemi.com
FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
January 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA,
Referenced to 25°C
-30
V
IDSS
Zero Gate Voltage Drain Current
VGS = 0V, VDS = -24V
-1
µA
IGSS
Gate-Body Leakage
VGS = ±25V, VDS = 0V
±100
nA
-3
V
-22
mV/°C
On Characteristics (Note 2)
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = -250µA
∆VGS(TH)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250µA,
Referenced to 25°C
4
ID = -4A, VGS = -10V
44
50
ID = -3.4A, VGS = -4.5V
67
75
ID = -4A, VGS = -10V,
TJ = 125°C
60
70
rDS(on)
Static Drain-Source On-Resistance
ID(ON)
On-State Drain Current
VGS = -10V, VDS = -5V
gFS
Forward Transconductance
ID = -4A, VDS = -5V
-1
-1.8
mV/°C
-20
mΩ
A
8.4
S
470
pF
126
pF
61
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -15V, VGS = 0V,
f = 1MHz
Switching Characteristics (Note 2)
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
7
14
ns
12
22
td(off)
Turn-Off Delay Time
ns
16
29
tf
ns
Turn-Off Fall Time
6
12
ns
Qg
Total Gate Charge
6
8.1
nC
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = -15V, ID = -1A
VGS = -10V, RGEN = 6Ω
VDS = -15V, ID = -4A,
VGS = -5V
2.1
nC
2
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0V, IS = -1.3 A (Note 2)
-0.77
-1.3
A
-1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
b) 156oC/W whe mounted on a
minimum pad of 2 oz copper
a) 78oC/W when mounted on a
1 in2 pad of 2 oz copper
Scale 1: 1 on letter size paper
2: Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
2
FDC658AP Rev. B (W)
www.fairchildsemi.com
FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
2
-5.0V
VGS = -10V
-I D , DRAIN CURRENT (A)
-6.0V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
20
-4.5V
15
-4.0V
10
-3.5V
5
-3.0V
1.8
VGS = -4.5V
1.6
-5.0V
1.4
-6.0V
-7.0V
1.2
-10V
1
0.8
0
0
1
2
3
4
5
0
4
8
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
16
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
0.22
1.6
ID = -4.0A
VGS = -10V
ID = -2.0A
r DS(on), DRAIN TO SOURCE
ON RESISTANCE (OHM)
1.4
1.2
1
0.8
0.6
-50
0.18
0.14
TJ = 125oC
0.1
o
TJ = 25 C
0.06
0.02
-25
0
25
50
75
100
125
150
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On-Resistance vs Junction
Temperature
Figure 4. On-Resistance vs Gate to Source
Voltage
15
10
o
TJ = -55 C
-I S , REVERSE DRAIN CURRENT (A)
25 C
o
VDS = -5V
-I D , D R A IN C U R R E N T (A )
20
-ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-8.0V
12
o
125 C
9
6
3
0
VGS = 0V
1
o
TJ = 125 C
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
1
2
3
4
5
0
-VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode Forward Voltage
vs Source Current
3
FDC658AP Rev. B (W)
0.2
www.fairchildsemi.com
FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
10
600
VDS = -5V
-V G S , G A T E -S O U R C E V O L T A G E (V )
ID = -4A
8
C A PA C ITA N C E (pF)
-15V
6
4
2
450
300
Coss
150
Crss
0
0
0
2
4
6
8
0
10
6
Figure 7. Gate Charge Characteristics
18
24
30
Figure 8. Capacitance vs Drain to Source Voltage
100
rDS(on) LIMIT
P(pk), PEAK TRA NSIENT PO W ER (W )
10
10
100us
1ms
10ms
1
100ms
VGS = -10V
SINGLE PULSE
RθJA = 156oC/W
0.1
1s
o
TA = 25 C
DC
0.01
0.1
1
10
SINGLE PULSE
RθJA = 156°C/W
TA = 25°C
8
6
4
2
0
0.01
100
0.1
1
10
100
t, PULSE WIDTH (s)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Forward Bias Safe Operating Area
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
12
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
-I D , DR A IN C UR REN T (A )
f = 1 MHz
VGS = 0 V
Ciss
-10V
Figure 10. Single Pulse Maximum Power
Dissipation
1
D = 0.5
RθJA(t) = r(t) + RθJA
0.2
RθJA = 156 C/W
0.1
o
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, RECTANGULAR PULSE DURATION
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
4
FDC658AP Rev. B (W)
www.fairchildsemi.com
FDC658AP Single P-Channel Logic Level PowerTrench® MOSFET
Typical Characteristics
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effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I18