FDD6635 35V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been produced using • 59 A, 35 V Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss RDS(ON) = 10 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS = 4.5 V capability to offer superior performance benefit in the applications. • Fast Switching Applications • RoHS compliant • Inverter • Power Supplies D D G S G D-PAK TO-252 (TO-252) S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units 35 V VDSS Drain-Source Voltage VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) VGSS Gate-Source Voltage ID Continuous Drain Current @TC=25°C @TA=25°C Pulsed (Note 1a) 100 PD Power Dissipation TJ, TSTG 40 V ±20 V (Note 3) 59 A (Note 1a) 15 (Note 4) @TC=25°C (Note 3) 55 @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) W 1.6 Operating and Storage Junction Temperature Range –55 to +150 °C Thermal Characteristics RθJC Thermal Resistance, Junction-to-Case (Note 1) 2.7 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 40 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) 96 °C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape width Quantity FDD6635 FDD6635 D-PAK (TO-252) 13’’ 12mm 2500 units ©2005 Fairchild Semiconductor Corporation FDD6635 Rev. C(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET September 2005 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings EAS IAS Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current VDD = 35 V, ID= 15 A, L=1mH 113 15 mJ A Off Characteristics(Note 2) ID = 250 μA 35 V BVDSS ΔBVDSS ΔTJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 μA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 28 V, VGS = 0 V 1 μA IGSS Gate–Body Leakage VGS = ±20 V, VDS = 0 V ±100 nA 3 V On Characteristics VGS(th) ΔVGS(th) ΔTJ RDS(on) gFS VGS = 0 V, 32 mV/°C (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance Forward Transconductance ID = 250 μA VDS = VGS, ID = 250 μA, Referenced to 25°C VGS = 10 V, VGS = 4.5 V, VGS = 10 V, VDS = 5 V, ID = 15 A ID = 13 A ID = 15 A, TJ=125°C ID = 15 A 1 1.9 –5 8.2 10.2 12.4 mV/°C 10 13 16 mΩ 53 S 1400 pF 317 pF 137 pF 1.4 Ω Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VDS = 20 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, f = 1.0 MHz (Note 2) td(on) Turn–On Delay Time 11 20 ns tr Turn–On Rise Time 6 12 ns td(off) Turn–Off Delay Time 28 45 ns tf Turn–Off Fall Time 14 25 ns Qg (TOT) Total Gate Charge, VGS = 10V 26 36 nC Qg Total Gate Charge, VGS = 5V 13 18 Qgs Gate–Source Charge 3.9 nC Qgd Gate–Drain Charge 5.3 nC FDD6635 Rev. C(W) VDD = 20 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω VDS = 20 V, ID = 15 A nC www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics VSD trr Drain–Source Diode Forward Voltage Diode Reverse Recovery Time Qrr Diode Reverse Recovery Charge VGS = 0 V, IS = 15 A IF = 15 A, diF/dt = 100 A/µs 0.8 (Note 2) 1.2 V 26 ns 16 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 40°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. BV(avalanche) rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDD6635 Rev. C(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Electrical Characteristics 80 2.4 VGS=10V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0V 70 ID, DRAIN CURRENT (A) 6.0V 4.5V 60 3.5V 50 40 30 20 3.0V 10 2.2 2 VGS = 3.5V 1.8 1.6 4.0V 1.4 4.5V 5.0V 1.2 6.0V 0.8 0 0 0.5 1 1.5 2 2.5 0 3 10 20 Figure 1. On-Region Characteristics 40 50 60 70 80 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 1.8 0.029 ID = 7.5A ID = 15A VGS = 10V 1.6 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) 1.4 1.2 1 0.8 0.6 0.025 0.021 TA = 125oC 0.017 0.013 TA = 25oC 0.009 0.005 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 80 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 25oC 70 o TA =-55 C ID, DRAIN CURRENT (A) 10V 1 60 125oC 50 40 30 20 10 VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 4 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics FDD6635 Rev. C(W) 4.5 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Typical Characteristics 2000 ID = 15A VDS = 10V f = 1MHz VGS = 0 V 15V 1600 8 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 4 CISS 1200 800 COSS 2 400 0 0 CRSS 0 5 10 15 20 25 0 30 5 10 Figure 7. Gate Charge Characteristics 25 30 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 20 Figure 8. Capacitance Characteristics 1000 100µs 100 1ms 10ms 100ms 10 10s 1s DC 1 VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 60 40 20 0 0.01 100 0.1 1 VDS, DRAIN-SOURCE VOLTAGE (V) 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1000 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 I(AS), AVALANCHE CURRENT I(pk), PEAK TRANSIENT CURRENT (A) 15 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 60 40 20 o TJ = 25 C 100 10 1 0 0.1 1 10 100 t1, TIME (sec) Figure 11. Single Pulse Maximum Peak Current FDD6635 Rev. C(W) 1000 1 10 100 1000 10000 tAV, TIME IN AVANCHE(ms) Figure 12. Unclamped Inductive Switching Capability www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.0 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6635 Rev. C(W) www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Typical Characteristics L VDS BVDSS tP VGS RGEN + DUT VDD VDD - 0V VGS VDS IAS IAS tp vary tP to obtain required peak IAS 0.01Ω tAV Figure 14. Unclamped Inductive Load Test Circuit Figure 15. Unclamped Inductive Waveforms Drain Current Regulator Same type as DUT + - 10μF QG 10V 50kΩ 10V + 1μF QGD QGS VGS VDD - VGS DUT Charge, (nC) Ig(REF) Figure 16. Gate Charge Test Circuit VDS RL tON tOFF td(OFF) td(ON) VDS + VGS RGEN Figure 17. Gate Charge Waveform DUT VDD tf tr 90% 90% VGS Pulse Width ≤ 1μs Duty Cycle ≤ 0.1% 10% 0V 90% VGS 50% 0V Figure 18. Switching Time Test Circuit FDD6635 Rev. C(W) 10% 10% 50% Pulse Width Figure 19. Switching Time Waveforms www.fairchildsemi.com FDD6635 35V N-Channel PowerTrench® MOSFET Test Circuits and Waveforms TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FAST® ActiveArray™ FASTr™ Bottomless™ FPS™ Build it Now™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ i-Lo™ EnSigna™ ImpliedDisconnect™ FACT™ IntelliMAX™ FACT Quiet Series™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16