SFD30N06
SemiWell Semiconductor
N-Channel MOSFET
Features
Symbol
■
Low RDS(on) (0.04Ω )@VGS=10V
■
Gate Charge (Typical 27nC)
Improved dv/dt Capability
100% Avalanche Tested
Maximum Junction Temperature Range (150°C)
■
■
■
{
2. Drain
●
1. Gate
◀
{
▲
●
●
{
General Description
This Power MOSFET is produced using SemiWell’s advanced
planar stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a low
gate charge with superior switching performance, and rugged
avalanche characteristics. This Power MOSFET is well suited
for synchronous DC-DC Converters and Power Management in
portable and battery operated products.
3. Source
D-PACK (TO-252)
2
1
3
Absolute Maximum Ratings
Symbol
VDSS
ID
Parameter
Value
Units
Drain to Source Voltage
60
V
Continuous Drain Current(@TC = 25°C)
23
A
Continuous Drain Current(@TC = 100°C)
15
A
(Note 1)
92
A
±20
V
430
mJ
IDM
Drain Current Pulsed
VGS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
Peak Diode Recovery dv/dt
(Note 3)
dv/dt
PD
TSTG, TJ
TL
7.0
V/ns
Total Power Dissipation(@TA = 25 °C)
2.5
W
Total Power Dissipation(@TC = 25 °C)
Derating Factor above 25 °C
44
W
0.35
W/°C
- 55 ~ 150
°C
300
°C
Operating Junction Temperature & Storage Temperature
Maximum Lead Temperature for soldering purpose,
1/8 from Case for 5 seconds.
Thermal Characteristics
Symbol
Parameter
Value
Min.
Typ.
Max.
Units
RθJC
Thermal Resistance, Junction-to-Case
-
-
2.85
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
-
-
110
°C/W
1/7
December, 2002. Rev. 0.
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved.
SFD30N06
Electrical Characteristics
Symbol
( TC = 25 °C unless otherwise noted )
Parameter
Test Conditions
Min
Typ
Max
Units
60
-
-
V
-
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = 250uA
Δ BVDSS/
Δ TJ
Breakdown Voltage Temperature
coefficient
ID = 250uA, referenced to 25 °C
-
0.062
IDSS
Zero Gate Voltage Drain Current
VDS = 60V, VGS = 0V
-
-
1
uA
VDS = 48V, TC = 150 °C
-
-
10
uA
100
nA
IGSS
Gate-Source Leakage, Forward
VGS = 20V, VDS = 0V
Gate-Source Leakage, Reverse
VGS = -20V, VDS = 0V
-
-
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250uA
2.0
-
4.0
V
RDS(ON)
Static Drain-Source On-state Resistance
VGS =10 V, ID = 11.5A
-
0.029
0.04
Ω
-
930
1210
-
290
380
-
75
100
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VGS =0 V, VDS =25V, f = 1MHz
pF
Dynamic Characteristics
td(on)
tr
td(off)
tf
Turn-on Delay Time
VDD =30V, ID =15A, RG =50Ω
Rise Time
Turn-off Delay Time
Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge(Miller Charge)
※ see fig. 13.
(Note 4, 5)
-
15
40
-
25
60
-
60
130
-
40
90
-
27
35
VDS =48V, VGS =10V, ID =30A
-
6.2
-
※ see fig. 12.
-
11.1
-
Min.
Typ.
Max.
(Note 4, 5)
ns
nC
Source-Drain Diode Ratings and Characteristics
Symbol
Parameter
IS
Continuous Source Current
ISM
Pulsed Source Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction
Diode in the MOSFET
IS =23A, VGS =0V
IS=30A,VGS=0V,dIF/dt=100A/us
※ NOTES
1. Repeativity rating : pulse width limited by junction temperature
2. L = 950uH, IAS =23A, VDD = 25V, RG = 0Ω , Starting TJ = 25°C
3. ISD ≤ 30A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse Width ≤ 300us, Duty Cycle ≤ 2%
5. Essentially independent of operating temperature.
2/7
Unit.
-
-
23
-
-
92
-
-
1.5
V
-
45
-
ns
-
65
-
nC
A
SFD30N06
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
ID, Drain Current [A]
Top :
1
10
1
10
o
150 C
o
25 C
o
-55 C
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
0
※ Notes :
1. VDS = 25V
2. 250µ s Pulse Test
0
10
-1
10
0
10
1
10
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
80
IDR[A], Reverse Drain Current
RDS(ON),
Drain-Source On-Resistance[mΩ ]
100
VGS = 10V
60
VGS = 20V
40
20
1
10
150℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
※ Note : TJ = 25℃
0
0
0
20
40
60
80
100
120
10
140
0.4
0.6
ID, Drain Current [A]
0.8
1.0
1.2
1.4
1.6
VSD[V], Source-Drain voltage
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
2000
12
VGS, Gate-Source Voltage [V]
Ciss=Cgs+Cgd(Cds=shorted)
Coss=Cds+Cgd
Crss=Cgd
1500
Capacitance [pF]
25℃
※ Notes :
1. VGS = 0V
2. f=1MHz
Ciss
1000
Coss
500
Crss
VDS = 30V
10
VDS = 48V
8
6
4
2
※ Note : ID = 30.0 A
0
0
5
10
15
20
25
VDS, Drain-Source Voltage [V]
30
35
0
0
5
10
15
20
25
30
Qg, Total Gate Charge [nC]
3/7
SFD30N06
Fig 7. Breakdown Voltage Variation
vs. Junction Temperature
Fig 8. On-Resistance Variation
vs. Junction Temperature
2.5
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 µ A
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
0.5
※ Notes :
1. VGS = 10 V
2. ID = 11.5 A
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Fig 10. Maximum Drain Current
vs. Case Temperature
Fig 9. Maximum Safe Operating Area
3
10
25
Operation in This Area
is Limited by R DS(on)
20
ID' Drain Current [A]
ID, Drain Current [A]
2
10
100 µs
1 ms
10 ms
1
10
DC
※ Notes :
0
10
o
1. TC = 25 C
15
10
5
o
2. TJ = 150 C
3. Single Pulse
0
-1
10
-1
10
0
1
10
2
10
25
10
50
VDS, Drain-Source Voltage [V]
75
100
TC' Case Temperature [ C]
Fig 11. Transient Thermal Response Curve
Zθ JC(t), Thermal Response
D = 0 .5
10
0
0 .2
0 .1
※ N o te s :
1 . Z θ J C(t) = 2 .8 5 ℃ /W M a x .
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z θ J C(t)
0 .0 5
10
0 .0 2
-1
0 .0 1
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
4/7
125
o
10
0
10
1
150
SFD30N06
Fig. 12. Gate Charge Test Circuit & Waveforms
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
1mA
Charge
Fig 13. Switching Time Test Circuit & Waveforms
RL
VDS
VDS
90%
VDD
( 0.5 rated V DS )
10V
V
Pulse
Generator
Vin
DUT
RG
10%
tr
td(on)
td(off)
t on
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
VDS
VDD
ID
BVDSS
1
EAS = ---- LL IAS2 -------------------2
BVDSS -- VDD
BVDSS
IAS
RG
10V
ID (t)
DUT
VDS (t)
VDD
tp
Time
5/7
SFD30N06
Fig. 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
IS
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• IS controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
IS
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
Vf
Body Diode
Forward Voltage Drop
6/7
VDD
SFD30N06
TO-252(D-PAK) Package Dimension
mm
Dim.
Min.
Typ.
A
6.48
6.604
B
5.0
5.08
C
7.42
7.8
D
2.184
E
F
Inch
Max.
Min.
Typ.
6.73
0.255
0.26
0.265
5.21
0.197
0.2
0.205
8.18
0.292
0.307
0.322
2.286
2.388
0.086
0.09
0.094
0.762
0.813
0.864
0.03
0.032
0.034
1.016
1.067
1.118
0.04
0.042
0.044
G
2.286
0.09
H
2.286
0.09
I
0.534
0.61
0.686
0.021
0.024
0.027
J
1.016
1.067
1.118
0.04
0.042
0.044
K
0.508
0.02
L
0.762
0.03
φ
1.57
0.06
A
D
E
B
φ
F
C
I
2
1
G
3
K
H
J
7/7
Max.
L
1. Gate
2. Drain
3. Source