STMICROELECTRONICS W45NM60

STW45NM60
N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247
MDmesh™ Power MOSFET
General features
Type
VDSS
(@Tjmax)
RDS(on)
ID
STW45NM60
650V
< 0.11Ω
45A
■
High dv/dt and avalanche capabilities
■
100% avalanche tested
■
Low input capacitance and gate charge
■
Low gate input resistance
■
Tight process control and high manufacturing
yields
TO-247
Description
The MDmesh™ is a new revolutionary Power
MOSFET technology that associates the multiple
drain process with the Company’s PowerMESH™
horizontal layout. The resulting product has an
outstanding low on-resistance, impressively high
dv/dt and excellent avalanche characteristics. The
adoption of the Company’s proprietary strip
technique yields overall dynamic performance
that is significantly better than that of similar
competitor’s products.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
Marking
Package
Packaging
STW45NM60
W45NM60
TO-247
Tube
December 2006
Rev 7
1/12
www.st.com
12
Contents
STW45NM60
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
Test circuit
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
................................................ 8
STW45NM60
1
Electrical ratings
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Value
Unit
Gate- source voltage
±30
V
ID
Drain current (continuous) at TC = 25°C
45
A
ID
Drain current (continuous) at TC = 100°C
28
A
IDM (1)
Drain current (pulsed)
180
A
PTOT
Total dissipation at TC = 25°C
417
W
Derating factor
3.33
W/°C
15
V/ns
–65 to 150
°C
150
°C
Value
Unit
VGS
dv/dt
(2)
Tstg
Tj
Parameter
Peak diode recovery voltage slope
Storage temperature
Max. operating junction temperature
1. Pulse width limited by safe operating area
2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS
Table 2.
Symbol
Thermal data
Parameter
Rthj-case
Thermal resistance junction-case
0.3
°C/W
Rthj-amb
Thermal resistance junction-amb
30
°C/W
Maximum lead temperature for soldering purpose
300
°C
Max value
Unit
Tl
Table 3.
Symbol
Avalanche characteristics
Parameter
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
15
A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAR, VDD = 35 V)
850
mJ
3/12
Electrical characteristics
2
STW45NM60
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4.
Symbol
V(BR)DSS
On/off states
Parameter
Drain-source breakdown
voltage
Test conditions
ID = 250 µA, VGS = 0
Min.
Typ. Max. Unit
600
V
VDS = Max rating
10
µA
VDS = Max rating, TC = 125 °C
100
µA
Gate-body leakage
current (VDS = 0)
VGS = ±30V
±100
nA
VGS(th)
Gate threshold voltage
VDS = VGS, ID = 250µA
4
5
V
RDS(on)
Static drain-source on
resistance
VGS = 10V, ID = 22.5A
0.09
0.11
Ω
Min. Typ. Max.
Unit
VDS > ID(on) x RDS(on)max, ID=
22.5A
15
S
IDSS
Zero gate voltage
Drain current (VGS = 0)
IGSS
Table 5.
Symbol
3
Dynamic
Parameter
Test conditions
gfs (1)
Forward transconductance
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 25V, f = 1 MHz, VGS = 0
3800
1250
80
Equivalent output
capacitance
VGS = 0V, VDS = 0V to 480V
340
pF
RG
Gate input resistance
f=1 MHz Gate DC Bias = 0
test signal level = 20mV
open drain
1.4
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 400V, ID = 45A,
VGS = 10V
Figure 14
96
31
43
Coss eq.(2)
pF
pF
pF
134
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
4/12
STW45NM60
Electrical characteristics
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD = 250V, ID = 22.5A
RG = 4.7Ω VGS = 10V
Figure 13
30
20
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD = 400V, ID = 45A,
RG = 4.7Ω, VGS = 10V
Figure 13
16
23
40
ns
ns
ns
Table 7.
Symbol
ISD
ISDM
VSD
(1)
trr
Qrr
IRRM
trr
Qrr
IRRM
Source drain diode
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Source-drain current
45
A
Source-drain current (pulsed)
180
A
1.5
V
Forward on voltage
ISD = 45A, VGS = 0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 25°C
Figure 15
508
10
40
ns
µC
A
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45A,
di/dt = 100A/µs,
VDD = 100 V, Tj = 150°C
Figure 15
650
14
43
ns
µC
A
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
5/12
Electrical characteristics
STW45NM60
2.1
Electrical characteristics (curves)
Figure 1.
Safe operating area
Figure 2.
Thermal impedance
Figure 3.
Output characteristics
Figure 4.
Transfer characteristics
Figure 5.
Transconductance
Figure 6.
Static-drain source on resistance
6/12
STW45NM60
Electrical characteristics
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Figure 9.
Normalized gate threshold voltage
vs temperature
Figure 11. Source-drain diode forward
characteristics
Capacitance variations
Figure 10. Normalized on resistance vs
temperature
Figure 12. Normalized BVDSS vs temperature
7/12
Test circuit
3
STW45NM60
Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
Figure 16. Unclamped inductive load test
switching and diode recovery times
circuit
Figure 17. Unclamped inductive waveform
8/12
Figure 18. Switching time waveform
STW45NM60
4
Package mechanical data
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at : www.st.com
9/12
Package mechanical data
10/12
STW45NM60
STW45NM60
5
Revision history
Revision history
Table 8.
Revision history
Date
Revision
Changes
05-Mar-2005
5
Complete document with curves
16-May-2006
6
The document has been reformatted
18-Dec-2006
7
Updates curves:Figure 1., Figure 4. and Figure 6.
11/12
STW45NM60
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