STW45NM60 N-channel 650V@Tjmax - 0.09Ω - 45A - TO-247 MDmesh™ Power MOSFET General features Type VDSS (@Tjmax) RDS(on) ID STW45NM60 650V < 0.11Ω 45A ■ High dv/dt and avalanche capabilities ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Tight process control and high manufacturing yields TO-247 Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competitor’s products. Internal schematic diagram Applications ■ Switching application Order codes Part number Marking Package Packaging STW45NM60 W45NM60 TO-247 Tube December 2006 Rev 7 1/12 www.st.com 12 Contents STW45NM60 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 ................................................ 8 STW45NM60 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate- source voltage ±30 V ID Drain current (continuous) at TC = 25°C 45 A ID Drain current (continuous) at TC = 100°C 28 A IDM (1) Drain current (pulsed) 180 A PTOT Total dissipation at TC = 25°C 417 W Derating factor 3.33 W/°C 15 V/ns –65 to 150 °C 150 °C Value Unit VGS dv/dt (2) Tstg Tj Parameter Peak diode recovery voltage slope Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD < 45A, di/dt < 400A/µs, VDD < 80% V(BR)DSS Table 2. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case 0.3 °C/W Rthj-amb Thermal resistance junction-amb 30 °C/W Maximum lead temperature for soldering purpose 300 °C Max value Unit Tl Table 3. Symbol Avalanche characteristics Parameter IAR Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 15 A EAS Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 35 V) 850 mJ 3/12 Electrical characteristics 2 STW45NM60 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol V(BR)DSS On/off states Parameter Drain-source breakdown voltage Test conditions ID = 250 µA, VGS = 0 Min. Typ. Max. Unit 600 V VDS = Max rating 10 µA VDS = Max rating, TC = 125 °C 100 µA Gate-body leakage current (VDS = 0) VGS = ±30V ±100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250µA 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 22.5A 0.09 0.11 Ω Min. Typ. Max. Unit VDS > ID(on) x RDS(on)max, ID= 22.5A 15 S IDSS Zero gate voltage Drain current (VGS = 0) IGSS Table 5. Symbol 3 Dynamic Parameter Test conditions gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1 MHz, VGS = 0 3800 1250 80 Equivalent output capacitance VGS = 0V, VDS = 0V to 480V 340 pF RG Gate input resistance f=1 MHz Gate DC Bias = 0 test signal level = 20mV open drain 1.4 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400V, ID = 45A, VGS = 10V Figure 14 96 31 43 Coss eq.(2) pF pF pF 134 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 STW45NM60 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 250V, ID = 22.5A RG = 4.7Ω VGS = 10V Figure 13 30 20 ns ns tr(Voff) tf tc Off-voltage rise time Fall time Cross-over time VDD = 400V, ID = 45A, RG = 4.7Ω, VGS = 10V Figure 13 16 23 40 ns ns ns Table 7. Symbol ISD ISDM VSD (1) trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Test conditions Min. Typ. Max. Unit Source-drain current 45 A Source-drain current (pulsed) 180 A 1.5 V Forward on voltage ISD = 45A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, di/dt = 100A/µs, VDD = 100 V, Tj = 25°C Figure 15 508 10 40 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45A, di/dt = 100A/µs, VDD = 100 V, Tj = 150°C Figure 15 650 14 43 ns µC A 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 5/12 Electrical characteristics STW45NM60 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 2. Thermal impedance Figure 3. Output characteristics Figure 4. Transfer characteristics Figure 5. Transconductance Figure 6. Static-drain source on resistance 6/12 STW45NM60 Electrical characteristics Figure 7. Gate charge vs gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs temperature Figure 11. Source-drain diode forward characteristics Capacitance variations Figure 10. Normalized on resistance vs temperature Figure 12. Normalized BVDSS vs temperature 7/12 Test circuit 3 STW45NM60 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/12 Figure 18. Switching time waveform STW45NM60 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at : www.st.com 9/12 Package mechanical data 10/12 STW45NM60 STW45NM60 5 Revision history Revision history Table 8. Revision history Date Revision Changes 05-Mar-2005 5 Complete document with curves 16-May-2006 6 The document has been reformatted 18-Dec-2006 7 Updates curves:Figure 1., Figure 4. and Figure 6. 11/12 STW45NM60 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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