STW43NM50N N-channel 500 V, 0.070 Ω, 37 A MDmesh™ II Power MOSFET TO-247 Features Type VDSS @ Tjmax RDS(on) max ID STW43NM50N 550 V < 0.085 Ω 37 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance 2 3 1 TO-247 Application ■ Switching applications Description This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Figure 1. Internal schematic diagram $ ' 3 3# Table 1. Device summary Order code Marking Package Packaging STW43NM50N 43NM50N TO-247 Tube January 2010 Doc ID 14168 Rev 5 1/12 www.st.com 12 Contents STW43NM50N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 Doc ID 14168 Rev 5 STW43NM50N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 500 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 37 A ID Drain current (continuous) at TC = 100 °C 23 A Drain current (pulsed) 148 A Total dissipation at TC = 25 °C 255 W Peak diode recovery voltage slope 15 V/ns –55 to 150 °C 150 °C Value Unit 0.49 °C/W IDM (1) PTOT dv/dt (2) Tstg Tj Storage temperature Max. operating junction temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 37 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS Table 3. Symbol Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Value Unit 15 A 1000 mJ Table 4. Symbol Avalanche characteristics Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting TJ=25 °C, ID=IAS, VDD=50 V) Doc ID 14168 Rev 5 3/12 Electrical characteristics 2 STW43NM50N Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. Symbol On/off states Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 dv/dt (1) Drain source voltage slope VDD= 400 V, ID = 37 A, VGS=10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating VDS = Max rating, @125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4 V RDS(on) Static drain-source on resistance VGS = 10 V, ID = 18.5 A 500 V 30 2 3 V/ns Ω 0.070 0.085 1. Characteristic value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. Typ. Max. Unit - 18 - - pF gfs (1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 4200 290 20 Equivalent output capacitance VGS = 0, VDS = 0 to 400 V - 590 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 400 V, ID = 37 A, VGS = 10 V, (see Figure 15) - 140 72 23 - nC nC nC Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level = 20 mV open drain - 1.4 - Ω Coss eq. (2) VDS=15 V, ID = 18.5 A - S pF pF pF 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDS 4/12 Doc ID 14168 Rev 5 STW43NM50N Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Table 8. Symbol Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 250 V, ID = 18.5 A RG = 4.7 Ω VGS = 10 V (see Figure 14) Min. Typ. Max. Unit - 30 20 140 42 - ns ns ns ns Min Typ. Max Unit - 37 148 A A 1.5 V Source drain diode Parameter Test conditions ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage ISD = 37 A, VGS = 0 - Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 37 A, di/dt = 100 A/µs VDD = 60 V (see Figure 16) - 530 11 42 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 37 A, di/dt = 100 A/µs VDD = 60 V, Tj = 150 °C (see Figure 16) - 630 14 45 ns µC A trr Qrr IRRM trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5% Doc ID 14168 Rev 5 5/12 Electrical characteristics STW43NM50N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM00875v1 ID (A) 100 is in th 10µs is ea ar n) o S( D ax R 100µs n tio by m ra pe ited O m li 10 1ms 10ms 1 0.1 0.1 Figure 4. 100 10 1 VDS(V) Output characteristics ID (A) AM00874v1 VGS=10V 7V 100 AM00873v1 ID (A) 10 80 8 6V 60 6 40 4 5V 20 0 Figure 6. 2 0 5 10 15 25 0 0 30 VDS(V) Transconductance Figure 7. AM00868v1 Gfs(S) -50°C 4 2 6 10 VGS(V) 8 Static drain-source on resistance AM00870v1 RDS(on) (Ω) 20.5 25°C 0.74 15.5 150°C 0.72 10.5 0.70 5.5 0.68 0.5 0 6/12 20 VGS=10V ID=18.5A 0.66 5 10 15 20 25 30 ID(A) Doc ID 14168 Rev 5 5 10 15 20 25 30 ID(A) STW43NM50N Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM00872v1 VGS (V) AM00871v1 C (pF) VDD=400V VGS=10V ID=37A 12 Capacitance variations 10000 Ciss 10 8 1000 VDS=50V f=1MHz VGS=0 6 4 Coss 100 2 Crss 0 50 0 10 0.1 Qg(nC) 150 100 Figure 10. Normalized gate threshold voltage vs temperature 10 1 100 ID(A) Figure 11. Normalized on resistance vs temperature v AM00866v1 VGS(th) (norm) 1.1 (norm) 1.7 0.9 1.3 0.8 0.9 -25 0 25 50 75 100 TJ(°C) Figure 12. Source-drain diode forward characteristics 0.5 -25 0 25 50 75 100 TJ(°C) Figure 13. Normalized BVDSS vs temperature AM00876v1 VSD (V) VGS=10V ID=18.5A 2.1 VDS=VGS ID=250µA 1.0 0.7 AM00867v1 RDS(on) -50°C AM00869v1 BVDSS (norm) ID=1mA 1.0 25°C 1.05 150°C 0.8 1.01 0.6 0.4 0 0.97 10 20 30 ISD(A) 0.93 Doc ID 14168 Rev 5 -25 0 25 50 75 100 TJ(°C) 7/12 Test circuits 3 STW43NM50N Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform Doc ID 14168 Rev 5 STW43NM50N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Doc ID 14168 Rev 5 9/12 Package mechanical data STW43NM50N TO-247 Mechanical data mm. Dim. A Min. 4.85 Typ A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Max. 5.15 5.50 Doc ID 14168 Rev 5 STW43NM50N 5 Revision history Revision history Table 9. Document revision history Date Revision Changes 15-Nov-2007 1 First release 04-Aug-2008 2 Document status promoted from preliminary data to datasheet 15-Oct-2008 3 2.1: Electrical characteristics (curves) has been corrected 27-Jan-2009 4 VGS value has been corrected in Table 2 08-Jan-2010 5 Updated VGS on Table 2: Absolute maximum ratings. Doc ID 14168 Rev 5 11/12 STW43NM50N Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2010 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 12/12 Doc ID 14168 Rev 5