STW90NF20 N-channel 200 V, 0.019 Ω, 83 A, TO-247 low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STW90NF20 200 V < 0.023 Ω 83 A ■ Exceptional dv/dt capability ■ Low gate charge ■ 2 3 1 100% Avalanche tested TO-247 Application ■ Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters Table 1. Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STW90NF20 90NF20 TO-247 Tube August 2008 Rev 2 1/12 www.st.com 12 Contents STW90NF20 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STW90NF20 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 200 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 83 A ID Drain current (continuous) at TC = 100 °C 52 A Drain current (pulsed) 332 A Derating factor 2.4 W/°C Total dissipation at TC = 25 °C 300 W Peak diode recovery voltage slope 15 V/ns -50 to 150 °C Value Unit 0.42 °C/W IDM (1) PTOT dv/dt (2) TJ Tstg Operating junction temperature Storage temperature 1. Pulse width limited by safe operating area 2. ISD ≤ 83 A, di/dt ≤ 400 A/µs, VDD ≤ 80% V(BR)DSS Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 83 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 400 mJ 3/12 Electrical characteristics 2 STW90NF20 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VDS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 45 A V(BR)DSS Table 5. Symbol Parameter Forward transconductance Ciss Input capacitance Output capacitance Reverse Transfer Capacitance Crss Typ. Max. Unit 200 2 V 1 10 µA µA ±100 nA 3 4 V 0.018 0.023 Ω Typ. Max. Unit Dynamic gfs(1) Coss Min. Test conditions VDS = 15 V, ID = 45 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. 40 S 5736 1126 196 pF pF pF Equivalent output capacitance VDS = 0 to 160 V, VGS = 0 687 pF RG Intrinsic gate resistance f = 1 MHz open drain 1.7 Ω Qg Total gate charge Gate-source charge Gate-drain charge VDD = 160 V, ID = 83 A, 164 46 72 nC nC nC Coss eq.(2) Qgs Qgd VGS = 10 V (see Figure 15) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 STW90NF20 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. 24 138 148 142 VDD = 100 V, ID = 41.5 A RG = 4.7 Ω, VGS = 10 V, (see Figure 14) Unit ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Max. Unit ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD = 83 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 83 A,VDD = 100 V di/dt = 100 A/µs (see Figure 19) 200 1.6 16 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD =83 A, VDD = 100 V 235 2.2 18 ns µC A trr Qrr IRRM trr Qrr IRRM di/dt = 100 A/µs Tj = 150°C (see Figure 19) 83 332 A A 1.6 V 1. Pulse with limited by maximum temperature 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Electrical characteristics STW90NF20 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM00876v1 ID(A) (o n 100 ) Op e Lim rat ite ion d in by th m is a ax re RD a i s S 10µs 10 100µs 1ms 10ms 1 0.1 Figure 4. 1 10 100 VDS(V) Output characteristics AM00877v1 ID (A) VGS=10V AM00878v1 ID(A) 250 250 7V 200 200 6V 150 150 100 100 5V 50 50 4V 0 0 Figure 6. 10 20 VDS(V) Normalized BVDSS vs temperature AM00879v1 BVDSS (norm) 1.10 ID=1mA VGS=0 0 2 0 Figure 7. 4 6 8 10 VDS(V) Static drain-source on resistance AM00880v1 RDS(on) (Ω) ID=45A 0.0178 VGS=0 1.05 0.0174 1.00 0.95 0.0170 0.90 0.0166 0.85 0.8 -50 6/12 0 0.0162 50 100 TJ(°C) 5 10 15 20 25 30 35 40 ID(A) STW90NF20 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM00881v1 VGS (V) VDD=160V ID=83A VGS=10V 10 Capacitance variations AM00882v1 C (pF) 10000 Ciss 8 1000 Coss 6 4 Crss 100 2 0 0 50 100 150 Figure 10. Normalized gate threshold voltage vs temperature AM00883v1 VGS(th) (norm) ID=250µA 1.1 10 0.1 200 Qg(nC) 1 100 10 VDS(V) Figure 11. Normalized on resistance vs temperature AM00884v1 RDS(on) (norm) 2.5 VGS=VDS 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.5 0.6 0 0.5 -50 0 50 TJ(°C) 100 Figure 12. Source-drain diode forward characteristics 1.0 50 100 TJ(°C) Figure 13. Maximum avalanche energy vs temperature AM00885v1 VSD (V) 0 -50 AM00886v1 EAS (mJ) 400 Tj=-50°C 350 0.9 300 0.8 250 0.7 Tj=25°C 200 150 0.6 100 0.5 0 0 Tj=150°C 10 50 30 50 70 ISD(A) 0 0 10 30 50 70 90 110 130 TJ(°C) 7/12 Test circuits 3 STW90NF20 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform STW90NF20 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STW90NF20 TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Typ 5.50 STW90NF20 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 28-Aug-2007 1 First release 04-Aug-2008 2 Document status promoted from preliminary data to datasheet. 11/12 STW90NF20 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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