STW75NF30 N-channel 300 V, 0.037 Ω, 60 A, TO-247 low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID pW STW75NF30 300 V < 0.045 Ω 60 A 320 W ■ Exceptional dv/dt capability ■ Low gate charge ■ 100% Avalanche tested 2 1 Application ■ 3 TO-247 Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters Table 1. July 2008 Figure 1. Internal schematic diagram Device summary Order code Marking Package Packaging STW75NF30 75NF30 TO-247 Tube Rev 3 1/12 www.st.com 12 Contents STW75NF30 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) .......................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/12 .............................................. 8 STW75NF30 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 300 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 60 A ID Drain current (continuous) at TC = 100 °C 37.8 A Drain current (pulsed) 240 A Derating factor 2.56 W/°C Peak diode recovery voltage slope 12 V/ns PTOT Total dissipation at TC = 25 °C 320 W TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Value Unit 0.39 °C/W IDM (1) dv/dt(2) 1. Pulse width limited by safe operating area 2. ISD ≤ 60A, di/dt ≤ 200A/µs, VDD ≤ 80% V(BR)DSS Table 2. Symbol Thermal resistance Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche characteristics Symbol Parameter Max. value Unit IAR Avalanche current, repetitive or not-repetitive (pulse width limited by TJ max) 50 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V) 400 mJ 3/12 Electrical characteristics 2 STW75NF30 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating @125 °C IGSS Gate body leakage current (VDS = 0) VDS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 30 A V(BR)DSS Table 5. Symbol Parameter Forward transconductance Ciss Input capacitance Output capacitance Reverse Transfer Capacitance Crss Typ. Max. Unit 300 2 V 1 10 µA µA ±100 nA 3 4 V 0.037 0.045 Ω Typ. Max. Unit Dynamic gfs(1) Coss Min. Test conditions VDS = 15 V, ID = 30 A VDS = 25 V, f = 1 MHz, VGS = 0 Min. 40 S 5930 837 110 pF pF pF Equivalent output capacitance VDS = 0 to 240 V, VGS = 0 462 pF RG Intrinsic gate resistance f = 1 MHz open drain 1.55 Ω Qg Total gate charge Gate-source charge Gate-drain charge VDD = 240 V, ID = 30 A, 164 36 69 nC nC nC Coss eq.(2) Qgs Qgd VGS = 10 V (see Figure 15) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/12 STW75NF30 Electrical characteristics Table 6. Symbol td(on) tr td(off) tf Table 7. Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM trr Qrr IRRM Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions Min. Typ. Max. 115 87 141 101 VDD = 150 V, ID = 30 A RG = 4.7 Ω, VGS = 10 V, (see Figure 14) Unit ns ns ns ns Source drain diode Parameter Test conditions Min. Typ. Source-drain current Source-drain current (pulsed) Max. Unit 60 240 A A 1.6 V Forward on voltage ISD = 60 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 60 A,VDD = 60 V di/dt = 100 A/µs (see Figure 19) 252 2.5 20 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD =60 A, VDD = 60 V di/dt = 100 A/µs Tj = 150°C (see Figure 19) 316 3.7 23.2 ns µC A 1. Pulse with limited by maximum temperature 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/12 Electrical characteristics STW75NF30 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM00116v1 ID (A) 10µs 10 2 is ea ) ar (on ih s DS t R in x n a it o y m ra b pe d O mite li 10 1 100µs 1ms 10ms 10 0 10-1 10-1 Figure 4. 10 0 10 1 10 2 VDS(V) Output characteristics AM00117v1 ID(A) VGS=10V 180 AM00118v1 ID(A) 180 160 160 140 140 6V 120 120 100 100 80 80 5V 60 60 40 40 20 20 4V 0 Figure 6. 10 20 0 VDS(V) Normalized BVDSS vs temperature Figure 7. 4 2 6 VGS(V) Static drain-source on resistance AM00124v1 BVDSS (norm) AM00122v1 RDS(on) (Ω) 1.15 0.035 1.05 1.0 0.0345 0.95 0.9 0.034 0.85 0.8 -75 -50 -25 6/12 0.0335 0 25 50 75 100 125 150 TJ(°C) 5 10 15 20 25 30 ID(A) STW75NF30 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM00119v1 VGS (V) VGS=10V ID=60A VDD=240V 12 Capacitance variations AM00120v1 C (pF) 10 4 10 Ciss 8 10 3 6 Coss 4 10 2 Crss 2 0 50 100 150 Qg(nC) 200 Figure 10. Normalized gate threshold volatge vs temperature AM00125v1 VGS(th) (norm) 1.1 101 10-1 10 0 10 2 VDS(V) 10 1 Figure 11. Normalized on resistancevs temperature RDS(on) AM00126v1 2.5 1.0 2.0 0.9 1.5 0.8 1.0 0.7 0.6 0.5 0.5 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 12. Source-drain diode forward characteristics 0 -75 -50 -25 0 25 50 75 100 125 150 TJ(°C) Figure 13. Maximum avalanche energy vs temperature AM00123v1 VDS (V) TJ=-50°C 0.9 AM00121v1 EAS (mJ) 400 25°C 0.8 350 300 150°C 0.7 250 200 0.6 150 100 0.5 50 0.4 0 0 10 20 30 40 50 60 ISD(A) 0 30 60 90 120 TJ(°C) 7/12 Test circuits 3 STW75NF30 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit Figure 16. Test circuit for inductive load Figure 17. Unclamped inductive load test switching and diode recovery times circuit Figure 18. Unclamped inductive waveform 8/12 Figure 19. Switching time waveform STW75NF30 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/12 Package mechanical data STW75NF30 TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e Max. 5.15 5.45 L 14.20 14.80 L1 3.70 4.30 L2 18.50 øP 3.55 3.65 øR 4.50 5.50 S 10/12 Typ 5.50 STW75NF30 5 Revision history Revision history Table 8. Document revision history Date Revision Changes 23-Oct-2007 1 First release 27-May-2008 2 New value inserted in Table 5: Dynamic 15-Jul-2008 3 Document status promoted from preliminary data to datasheet 11/12 STW75NF30 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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