Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. MMDL101T1 1.0 pF SCHOTTKY BARRIER DIODE • Very Low Capacitance — Less than 1.0 pF @ Zero Volts • Low Noise Figure — 6.0 dB Typ @ 1.0 GHz • Device Marking: 4M 1 CATHODE 1 2 ANODE 2 PLASTIC SOD– 323 CASE 477 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value 7.0 Unit Vdc Max 200 Unit mW 1.57 635 mW/°C °C/W –55 to+150 °C THERMAL CHARACTERISTICS Symbol PD R θJA T J , T stg Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range *FR–5 Minimum Pad ORDERING INFORMATION Device MMDL101T1 Package SOD–323 Shipping 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 0, f = 1.0MHz, Note 1) Reverse Leakage (V R = 3.0 V) Noise Figure (f = 1.0 GHz, Note 2) Forward Voltage (I F = 10 mA) Symbol Min Typ Max Unit V (BR)R 7.0 10 — Volts — 0.88 1.0 — 20 250 — 6.0 — — 0.5 0.6 CT IR NF V F pF nAdc dB Vdc *Notes on Next Page S1–1/3 MMDL101T1 TYPICAL CHARACTERISTICS 100 0.7 I F , FORWARD CURRENT (mA) I R , REVERSE LEAKAGE ( µA) 1.0 0.5 V R = 3.0 Vdc 0.2 0.1 0.07 0.05 0.02 MMBD110T1 0.01 10 T A = 85°C 1.0 T A = 25°C MMBD110T1 0.1 30 40 50 60 70 80 90 100 110 120 0.3 130 0.4 0.5 0.6 0.7 0.8 V F , FORWARD VOLTAGE (VOLTS) T A , AMBIENT TEMPERATURE (°C) Figure 2. Forward Voltage Figure 1. Reverse Leakage 1.0 11 NF, NOISE FIGURE (dB) 10 C, CAPACITANCE (pF) T A = –40°C 0.9 0.8 0.7 LOCAL OSCILLATOR FREQUENCY = 1.0GHz (Test Circuit Figure 5) 9 8 7 6 5 4 3 2 MMBD110T1 0.6 MMBD110T1 1 0 1.0 2.0 3.0 4.0 0.1 0.2 0.5 1.0 2.0 5.0 10 V R , REVERSE VOLTAGE (VOLTS) P LO , LOCAL OSCILLATOR POWER (mW) Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit NOTES ON TESTING AND SPECIFICATIONS Note1—C C andC T are measured using a capacitance bridge(Boonton Electronics Model 75A or equivalent). Note2—Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz.The LO power is adjusted for 1.0 mW. I F amplifier NF = 1.5 dB, f = 30MHz, see Figure 5. S1–2/3 MMDL101T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A D 2 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. B MILLIMETERS INCHES DIM E C H J NOTE 3 A B C D E H J K MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 STYLE 1: PIN 1. CATHODE 2. ANODE 0.63 mm 0.025’’ 1.60 mm 0.063’’ 0.83 mm 0.033’’ 2.85 mm 0.112’’ ( mm inches ) SOD–323 Soldering Footprint S1–3/3