TRIQUINT TGA4502-SCC

Product Data Sheet
July 22, 2003
K Band High Power Amplifier
TGA4502-SCC
Key Features
•
•
•
•
•
•
•
•
Primary Applications
Product Description
The TriQuint TGA4502-SCC is a compact
High Power Amplifier MMIC for K-band
applications. The part is designed using
TriQuint’s proven standard 0.25 um gate
power pHEMT production process.
•
K Band Sat-Com
•
Point-to-Point Radio
•
Point-to-Multipoint Communications
Fixtured Measured Performance
The TGA4502-SCC provides a nominal
29 dBm of output power at 1 dB gain
compression from 17-27 GHz with a small
signal gain of 22 dB.
Bias Conditions: Vd = 7V, Id = 760mA
35
Psat
33
P1dB (dBm)
31
29
P1dB
27
25
23
21
The TGA4502-SCC is 100% DC and RF
tested on-wafer to ensure performance
compliance.
17
18
19
20
21
22
23
24
25
26
27
Frequency (GHz)
30
Gain (dB)
30
G ain
24
24
18
18
12
12
6
6
0
0
Output
-6
-6
-12
-18
-24
-30
-12
-18
-24
Inpu t
t
14
16
-30
18
20
22
24
26
28
30
32
Frequency (G Hz)
1
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Return Loss (dB)
The part is ideally suited for low cost
emerging markets such as K-band
Satellite Communications, Point-to-Point
Radio, and Point-to-Multi Point
Communications.
17-27 GHz Application Frequency Range
22 dB Nominal Gain
29 dBm Nominal P1dB
37dBm Nominal OTOI
15 dB Nominal Return Loss
0.25 um pHEMT 2MI Technology
Bias 7V @ 760 mA
Chip Dimensions 1.52 x 3.29 x .1mm
Product Data Sheet
July 22, 2003
TGA4502-SCC
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
+
PARAMETER
VALUE
NOTES
8V
2/
V
Positive Supply Voltage
V-
Negative Supply Voltage Range
I+
Positive Supply Current
880 mA
| IG |
Gate Supply Current
28 mA
PIN
Input Continuous Wave Power
26 dBm
2/
PD
Power Dissipation
5.3 W
2/, 3/
TCH
Operating Channel Temperature
150 °C
4/, 5/
TM
Mounting Temperature (30 Seconds)
320 °C
TSTG
Storage Temperature
-5V TO 0V
2/
-65 to 150 °C
1/
These ratings represent the maximum operable values for this device.
2/
Current is defined under no RF drive conditions. Under RF drive, the supply current may rise to
1100 mA without damage. Combinations of supply voltage, supply current, input power, and
output power shall not exceed PD.
3/
When operated at this power dissipation with a base plate temperature of 70 °C, the median life is
1 E+6 hours.
4/
Junction operating temperature will directly affect the device median time to failure (TM). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
5/
These ratings apply to each individual FET.
2
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
TABLE II
DC PROBE TEST
(TA = 25 °C, Nominal)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
Idss, Q1
Saturated Drain Current
60
282
mA
G m, Q1
Transconductance
132
318
mS
Pinch-off Voltage
-1.5
-0.5
V
Breakdown Voltage Gate-Drain
-30
-13
V
Breakdown Voltage Gate-Source
-30
-13
V
Vp, Q1,2, 3-6, 7-10
VBVGD, Q1-10
VBVGS, Q1,2,3-6,7-10
Note: Q1 & Q2 are 600 um FETs. Q3-6 & Q7-10 are 2400 um FETs. Q1-10 is a 6000 um FET.
TABLE III
RF CHARACTERIZATION TABLE
(TA = 25 °C, Nominal)
Vd = 7V, Id = 760 mA
SYMBOL
Gain
PARAMETER
Small Signal Gain
IRL
Input Return Loss
ORL
Output Return Loss
P1dB
OTOI *
Output Power @
1dB Gain
Compression
Output Third Order
Intercept
TEST
CONDITION
F = 17 – 18 GHz
F = 17.5, 18 GHz
F = 20, 22, 24 GHz
F = 26.5 GHz
F = 27 GHz
F = 17 – 27 GHz
F = 17.5, 18, 20,
22, 24 GHz
F = 26.5 GHz
F = 17 – 27 GHz
F = 17.5, 18, 20,
22, 24 GHz
F = 26.5 GHz
F = 17 – 27 GHz
F = 18, 26.5 GHz
F = 17 – 27 GHz
F = 18, 26 GHz
MINIMUM
LIMITS
TYPICAL
UNITS
MAXIMUM
-17
18
17
----
22
-23
-20
20
--
------12
----
-15
--
10
-12
--27
-30
10
---
-34.5
37
--
---
dB
dB
dB
dBm
dBm
* Pin/tone = -7dBm, Separation = 0.010 GHz
3
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
Parameter
RθJC Thermal
Resistance
(channel to backside of
carrier)
TABLE IV
THERMAL INFORMATION
Test Conditions
TCH
o
( C)
150
Vd = 7 V
Id = 760 mA
Pdiss = 5.3 W
July 22, 2003
TGA4502-SCC
RθJC
(°C/W)
15.1
TM
(HRS)
1 E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil
o
CuMo Carrier at 70 C baseplate temperature. Worst case condition with no RF
applied, 100% of DC power is dissipated.
4
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
24
Gain (dB)
30
Gain
24
18
18
12
12
6
6
0
0
Output
-6
-6
-12
-12
-18
-18
-24
-24
Inpu t
t
-30
14
Return Loss (dB)
30
-30
16
18
20
22
24
26
28
30
32
Frequency (GHz)
35
Psat
P1dB (dBm)
33
31
29
P1dB
27
25
23
21
17
18
19
20
21
22
23
24
25
26
27
Frequency (GHz)
5
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
40
39
OTOI (dBm)
38
37
36
35
34
18
20
22
24
26
Frequency (GHz)
70
60
IMD3 & IMD5 (dBc)
IMD5 @ 22GHz
50
40
30
IMD3 @ 22GHz
20
10
0
10
12
14
16
18
20
22
24
26
Pout/Tone (dBm)
6
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
Measured Fixtured Data
Bias Conditions: Vd = 7V, Id = 760mA
30
20
25
5
25
5
20
-10
20
-10
15
-25
15
-25
10
-40
10
-40
Single Tone Power
IMD3
IMD5
0
-15
-10
-5
0
5
-55
5
-70
0
10
-70
-15
-10
Pin (dBm)
-5
0
5
10
Pin (dBm)
At Frequency: 26GHz
At Frequency: 24GHz
20
30
20
25
5
25
5
20
-10
20
-10
15
-25
15
-25
10
-40
10
-40
Single Tone Power
IMD3
IMD5
5
0
-15
-10
-5
0
Pin (dBm)
5
10
Pout/tone (dBm)
30
IMD3 & IMD5 (dBm)
Pout/tone (dBm)
-55
Single Tone Power
IMD3
IMD5
-55
5
-70
0
Single Tone Power
IMD3
IMD5
IMD3 & IMD5 (dBm)
5
Pout/tone (dBm)
20
IMD3 & IMD5 (dBm)
Pout/tone (dBm)
30
IMD3 & IMD5 (dBm)
At Frequency: 20GHz
At Frequency: 18GHz
-55
-70
-15
-10
-5
0
5
10
Pin (dBm)
7
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
Recommended Assembly Diagram
Vd (one side optional for Id < 780 mA)
Vg (one side optional)
100pF
0.01µF
DQ cap
(opt.)
100pF
Input
TFN
Output
TFN
100pF
100pF
Vg
Vd
Notes:
1. Connection to power det, ref
diode not shown.
2. 0.1µF cap on gate, drain lines
not shown but required.
3. For high power operation,
gate voltage is recommended
from both sides.
4. Drain voltage is required
from both sides for Id > 780mA.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
8
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
TGA4502 built-in power detector
Vdet
Vbias
100pF
100pF
RF
IN
RF
OUT
TGA4502 with external test coupler
(amplifier bias connections not shown)
On-chip diode functions as envelope detector
External coupler and DC bias required
10KΩ
TGA4502 measured detector voltage offset vs output power
with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is
uncalibrated, 10KΩ load
10
D e te c to r vo ltag e (V)
Video out
(Vdet)
TGA4502
C=2pF
1
0.1
External
DC bias
50Ω
RF
OUT
External coupler
(-20dB)
RF
OUT
0.01
8
10
12
14
16
18
20
22
24
26
28
30
32
Pout (dBm)
9
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
3.136
(0.123)
1.898
(0.075)
1.262
(0.046)
0.875
(0.034)
0.612
(0.024)
0.095
(0.004)
Mechanical Drawing
3.286
(0.129)
July 22, 2003
TGA4502-SCC
1.524
(0.060)
3
4
5
6
7
1.382
(0.544)
0.686
(0.027)
8
0.833
(0.033)
1
0.373
(0.015)
2
15
14
13
12
11
10
9
0.000
3.188
(0.126)
3.004
(0.118)
1.898
(0.075)
1.262
(0.050)
0.875
(0.034)
0.610
(0.024)
0.220
(0.009)
0.000
0.098
(.004)
Units: Millimeters (inches)
Thickness: 0.100 (0.004) (reference only)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance +/- 0.051 (0.002)
GND IS BACKSIDE OF MMIC
Bond pad #1
(RF Input)
0.200 x 0.100 (0.008 x 0.004)
Bond pad #9
REF2
0.100 x 0.100 (0.004 x 0.004)
Bond pad #2
(RF Output)
0.200 x 0.100 (0.008 x 0.004)
Bond pad #10
REF1
0.100 x 0.100 (0.004 x 0.004)
Bond pad #3
VG2
0.100 x 0.100 (0.004 x 0.004)
Bond pad #11
VD3
0.180 x 0.100 (0.007 x 0.004)
Bond pad #4
DQ
0.100 x 0.100 (0.004 x 0.004)
Bond pad #12
VG3
0.100 x 0.100 (0.004 x 0.004)
Bond pad #5
VG3
0.100 x 0.100 (0.004 x 0.004)
Bond pad #13
DQ
0.100 x 0.100 (0.004 x 0.004)
Bond pad #6
VD3
0.180 x 0.100 (0.007 x 0.004)
Bond pad #14
VG2
0.100 x 0.100 (0.004 x 0.004)
Bond pad #7
DET OUT
0.100 x 0.100 (0.004 x 0.004)
Bond pad #15
REF3
0.100 x 0.100 (0.004 x 0.004)
Bond pad #8
PWR DET
0.175 x 0.100 (0.007 x 0.004)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
10
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com
Product Data Sheet
July 22, 2003
TGA4502-SCC
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C
(for 30 sec max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200°C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Die are shipped in H20-074149 waffle packs.
11
TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com