Product Data Sheet July 22, 2003 K Band High Power Amplifier TGA4502-SCC Key Features • • • • • • • • Primary Applications Product Description The TriQuint TGA4502-SCC is a compact High Power Amplifier MMIC for K-band applications. The part is designed using TriQuint’s proven standard 0.25 um gate power pHEMT production process. • K Band Sat-Com • Point-to-Point Radio • Point-to-Multipoint Communications Fixtured Measured Performance The TGA4502-SCC provides a nominal 29 dBm of output power at 1 dB gain compression from 17-27 GHz with a small signal gain of 22 dB. Bias Conditions: Vd = 7V, Id = 760mA 35 Psat 33 P1dB (dBm) 31 29 P1dB 27 25 23 21 The TGA4502-SCC is 100% DC and RF tested on-wafer to ensure performance compliance. 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 30 Gain (dB) 30 G ain 24 24 18 18 12 12 6 6 0 0 Output -6 -6 -12 -18 -24 -30 -12 -18 -24 Inpu t t 14 16 -30 18 20 22 24 26 28 30 32 Frequency (G Hz) 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Return Loss (dB) The part is ideally suited for low cost emerging markets such as K-band Satellite Communications, Point-to-Point Radio, and Point-to-Multi Point Communications. 17-27 GHz Application Frequency Range 22 dB Nominal Gain 29 dBm Nominal P1dB 37dBm Nominal OTOI 15 dB Nominal Return Loss 0.25 um pHEMT 2MI Technology Bias 7V @ 760 mA Chip Dimensions 1.52 x 3.29 x .1mm Product Data Sheet July 22, 2003 TGA4502-SCC TABLE I MAXIMUM RATINGS 1/ SYMBOL + PARAMETER VALUE NOTES 8V 2/ V Positive Supply Voltage V- Negative Supply Voltage Range I+ Positive Supply Current 880 mA | IG | Gate Supply Current 28 mA PIN Input Continuous Wave Power 26 dBm 2/ PD Power Dissipation 5.3 W 2/, 3/ TCH Operating Channel Temperature 150 °C 4/, 5/ TM Mounting Temperature (30 Seconds) 320 °C TSTG Storage Temperature -5V TO 0V 2/ -65 to 150 °C 1/ These ratings represent the maximum operable values for this device. 2/ Current is defined under no RF drive conditions. Under RF drive, the supply current may rise to 1100 mA without damage. Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ When operated at this power dissipation with a base plate temperature of 70 °C, the median life is 1 E+6 hours. 4/ Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 5/ These ratings apply to each individual FET. 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC TABLE II DC PROBE TEST (TA = 25 °C, Nominal) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT Idss, Q1 Saturated Drain Current 60 282 mA G m, Q1 Transconductance 132 318 mS Pinch-off Voltage -1.5 -0.5 V Breakdown Voltage Gate-Drain -30 -13 V Breakdown Voltage Gate-Source -30 -13 V Vp, Q1,2, 3-6, 7-10 VBVGD, Q1-10 VBVGS, Q1,2,3-6,7-10 Note: Q1 & Q2 are 600 um FETs. Q3-6 & Q7-10 are 2400 um FETs. Q1-10 is a 6000 um FET. TABLE III RF CHARACTERIZATION TABLE (TA = 25 °C, Nominal) Vd = 7V, Id = 760 mA SYMBOL Gain PARAMETER Small Signal Gain IRL Input Return Loss ORL Output Return Loss P1dB OTOI * Output Power @ 1dB Gain Compression Output Third Order Intercept TEST CONDITION F = 17 – 18 GHz F = 17.5, 18 GHz F = 20, 22, 24 GHz F = 26.5 GHz F = 27 GHz F = 17 – 27 GHz F = 17.5, 18, 20, 22, 24 GHz F = 26.5 GHz F = 17 – 27 GHz F = 17.5, 18, 20, 22, 24 GHz F = 26.5 GHz F = 17 – 27 GHz F = 18, 26.5 GHz F = 17 – 27 GHz F = 18, 26 GHz MINIMUM LIMITS TYPICAL UNITS MAXIMUM -17 18 17 ---- 22 -23 -20 20 -- ------12 ---- -15 -- 10 -12 --27 -30 10 --- -34.5 37 -- --- dB dB dB dBm dBm * Pin/tone = -7dBm, Separation = 0.010 GHz 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet Parameter RθJC Thermal Resistance (channel to backside of carrier) TABLE IV THERMAL INFORMATION Test Conditions TCH o ( C) 150 Vd = 7 V Id = 760 mA Pdiss = 5.3 W July 22, 2003 TGA4502-SCC RθJC (°C/W) 15.1 TM (HRS) 1 E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil o CuMo Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 760mA 24 Gain (dB) 30 Gain 24 18 18 12 12 6 6 0 0 Output -6 -6 -12 -12 -18 -18 -24 -24 Inpu t t -30 14 Return Loss (dB) 30 -30 16 18 20 22 24 26 28 30 32 Frequency (GHz) 35 Psat P1dB (dBm) 33 31 29 P1dB 27 25 23 21 17 18 19 20 21 22 23 24 25 26 27 Frequency (GHz) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 760mA 40 39 OTOI (dBm) 38 37 36 35 34 18 20 22 24 26 Frequency (GHz) 70 60 IMD3 & IMD5 (dBc) IMD5 @ 22GHz 50 40 30 IMD3 @ 22GHz 20 10 0 10 12 14 16 18 20 22 24 26 Pout/Tone (dBm) 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC Measured Fixtured Data Bias Conditions: Vd = 7V, Id = 760mA 30 20 25 5 25 5 20 -10 20 -10 15 -25 15 -25 10 -40 10 -40 Single Tone Power IMD3 IMD5 0 -15 -10 -5 0 5 -55 5 -70 0 10 -70 -15 -10 Pin (dBm) -5 0 5 10 Pin (dBm) At Frequency: 26GHz At Frequency: 24GHz 20 30 20 25 5 25 5 20 -10 20 -10 15 -25 15 -25 10 -40 10 -40 Single Tone Power IMD3 IMD5 5 0 -15 -10 -5 0 Pin (dBm) 5 10 Pout/tone (dBm) 30 IMD3 & IMD5 (dBm) Pout/tone (dBm) -55 Single Tone Power IMD3 IMD5 -55 5 -70 0 Single Tone Power IMD3 IMD5 IMD3 & IMD5 (dBm) 5 Pout/tone (dBm) 20 IMD3 & IMD5 (dBm) Pout/tone (dBm) 30 IMD3 & IMD5 (dBm) At Frequency: 20GHz At Frequency: 18GHz -55 -70 -15 -10 -5 0 5 10 Pin (dBm) 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC Recommended Assembly Diagram Vd (one side optional for Id < 780 mA) Vg (one side optional) 100pF 0.01µF DQ cap (opt.) 100pF Input TFN Output TFN 100pF 100pF Vg Vd Notes: 1. Connection to power det, ref diode not shown. 2. 0.1µF cap on gate, drain lines not shown but required. 3. For high power operation, gate voltage is recommended from both sides. 4. Drain voltage is required from both sides for Id > 780mA. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC TGA4502 built-in power detector Vdet Vbias 100pF 100pF RF IN RF OUT TGA4502 with external test coupler (amplifier bias connections not shown) On-chip diode functions as envelope detector External coupler and DC bias required 10KΩ TGA4502 measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, 10KΩ load 10 D e te c to r vo ltag e (V) Video out (Vdet) TGA4502 C=2pF 1 0.1 External DC bias 50Ω RF OUT External coupler (-20dB) RF OUT 0.01 8 10 12 14 16 18 20 22 24 26 28 30 32 Pout (dBm) 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet 3.136 (0.123) 1.898 (0.075) 1.262 (0.046) 0.875 (0.034) 0.612 (0.024) 0.095 (0.004) Mechanical Drawing 3.286 (0.129) July 22, 2003 TGA4502-SCC 1.524 (0.060) 3 4 5 6 7 1.382 (0.544) 0.686 (0.027) 8 0.833 (0.033) 1 0.373 (0.015) 2 15 14 13 12 11 10 9 0.000 3.188 (0.126) 3.004 (0.118) 1.898 (0.075) 1.262 (0.050) 0.875 (0.034) 0.610 (0.024) 0.220 (0.009) 0.000 0.098 (.004) Units: Millimeters (inches) Thickness: 0.100 (0.004) (reference only) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond pad #1 (RF Input) 0.200 x 0.100 (0.008 x 0.004) Bond pad #9 REF2 0.100 x 0.100 (0.004 x 0.004) Bond pad #2 (RF Output) 0.200 x 0.100 (0.008 x 0.004) Bond pad #10 REF1 0.100 x 0.100 (0.004 x 0.004) Bond pad #3 VG2 0.100 x 0.100 (0.004 x 0.004) Bond pad #11 VD3 0.180 x 0.100 (0.007 x 0.004) Bond pad #4 DQ 0.100 x 0.100 (0.004 x 0.004) Bond pad #12 VG3 0.100 x 0.100 (0.004 x 0.004) Bond pad #5 VG3 0.100 x 0.100 (0.004 x 0.004) Bond pad #13 DQ 0.100 x 0.100 (0.004 x 0.004) Bond pad #6 VD3 0.180 x 0.100 (0.007 x 0.004) Bond pad #14 VG2 0.100 x 0.100 (0.004 x 0.004) Bond pad #7 DET OUT 0.100 x 0.100 (0.004 x 0.004) Bond pad #15 REF3 0.100 x 0.100 (0.004 x 0.004) Bond pad #8 PWR DET 0.175 x 0.100 (0.007 x 0.004) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com Product Data Sheet July 22, 2003 TGA4502-SCC Assembly Process Notes Reflow process assembly notes: • • • • • Use AuSn (80/20) solder with limited exposure to temperatures at or above 300°C (for 30 sec max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire. Maximum stage temperature is 200°C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. Die are shipped in H20-074149 waffle packs. 11 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: [email protected] Web: www.triquint.com