TRIQUINT TGA2701

Advance Product Information
September 1, 2005
7 – 8.5GHz High Power Amplifier
TGA2701
Key Features
•
•
•
•
•
•
Frequency Range: 7.0 -8.5 GHz
37 dBm Nominal Output Power
21 dB Nominal Gain
Bias: 5V & 7V, 1.05 A (2A under RF drive)
0.25 um 3MI pHEMT Technology
Chip Dimensions 3.80 x 2.61 x 0.10 mm
(0.150 x 0.103 x 0.004 in)
Primary Applications
Product Description
•
•
Measured Fixtured Data
The TriQuint TGA2701 is a High Power
Amplifier MMIC for 7 – 8.5GHz applications. The
part is designed using TriQuint’s 0.25um 3MI
pHEMT production process.
The part is ideally suited for low cost markets
such as Point-to-Point Radio and
Communications.
Bias: Vd = 5V & 7V, Idq = 1.05A
24
23
5V
22
7V
21
Gain (dB)
The TGA2701 nominally provides 37 dBm
output power and 42% PAE. The typical gain is
21 dB.
Point-to-Point Radio
Communications
20
19
18
17
16
The TGA2701 is 100% DC and RF tested onwafer to ensure performance compliance.
15
14
7
The TGA2701 has a protective surface
passivation layer providing environmental
robustness.
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
40
CW Output Power (dBm)
Lead-Free & RoHS compliant.
7.2
39
38
7V
37
36
5V
35
34
33
32
31
30
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change
without notice
1
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
TABLE I
MAXIMUM RATINGS 1/
SYMBOL
PARAMETER
VALUE
NOTES
10 V
2/
Vd
Drain Voltage
Vg
Gate Voltage Range
Id
Drain Current
3.85 A
2/ 3/
Ig
Gate Current
85 mA
3/
PIN
Input Continuous Wave Power
29 dBm
PD
Power Dissipation
11.3 W
-1 TO +0.5 V
0
TCH
Operating Channel Temperature
150 C
TM
Mounting Temperature (30 Seconds)
320 0C
TSTG
Storage Temperature
2/ 4/
5/
-65 to 150 0C
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed PD.
3/
Total current for the entire MMIC.
4/
When operated at this power dissipation with a base plate temperature of 70 0C, the median life is
1.0E+6 hrs.
5/
Junction operating temperature will directly affect the device median time to failure (MTTF). For
maximum life, it is recommended that junction temperatures be maintained at the lowest possible
levels.
2
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
TABLE II
ELECTRICAL CHARACTERISTICS
(Ta = 25 0C Nominal)
PARAMETER
TYPICAL
TYPICAL
UNITS
Frequency Range
7.0 – 8.5
7.0 – 8.5
GHz
Drain Voltage, Vd
5
7
V
Drain Current, Id
1.05
1.05
A
Gate Voltage, Vg
-0.7
-0.7
V
Small Signal Gain, S21
21
20.5
dB
Input Return Loss, S11
12
12
dB
Output Return Loss, S22
10
10
dB
CW Saturated Output Power @ 22 dBm Pin
Pulsed Saturated Output Power @ 22 dBm Pin
& 25% Duty Cycle
CW Power Added Eff. @ 22 dBm Pin
34.5
37
dBm
34.5
37
dBm
40
42
%
Pulsed Power Added Eff. @ 22 dBm Pin & 25%
Duty Cycle
40
42
%
-0.03
-0.03
dB/0C
TCH
(OC)
TJC
(qC/W)
TM
(HRS)
Small Signal Gain Temperature Coefficient
TABLE III
THERMAL INFORMATION
PARAMETER
TEST CONDITIONS
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.05 A
Pdiss = 7.35W
Small Signal
122
7.1
1.2E+7
θJC Thermal Resistance
(channel to Case)
Vd = 7 V
Id = 1.8 A @ Psat
Pdiss = 7.4 W
Pout = 5.2 W (RF)
123
7.1
1.2E+7
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70oC baseplate temperature.
.
3
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias Conditions: Vd = 5 V & 7V, Idq = 1.05 A
26
25
24
5V
23
22
21
Gain (dB)
20
19
7V
18
17
16
15
14
13
12
11
10
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
4
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias Conditions: Vd = 5 V & 7V, Idq = 1.05 A
0
5V
7V
Input Return Loss (dB)
-5
-10
-15
-20
-25
-30
-35
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
0
5V
7V
Output Return Loss (dB)
-5
-10
-15
-20
-25
-30
-35
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
5
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Vd = 5V & 7V, Idq = 1.05A, Pin = 22dBm, CW Power
40
CW Saturated Output Power (dBm)
39
38
7V
37
36
35
5V
34
33
32
31
30
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
8.2
8.4
8.6
Frequency (GHz)
CW Power Added Eff. (%)
50
45
7V
40
5V
35
30
25
20
15
10
7
7.2
7.4
7.6
7.8
8
Frequency (GHz)
6
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Vd = 5V & 7V, Idq = 1.05A, Freq = 8GHz, CW Power
38
36
1.65
34
1.60
32
1.55
30
1.50
Pout
28
1.45
26
1.40
24
1.35
22
1.30
20
1.25
18
1.20
16
Id (A)
CW Pout (dBm) & Gain (dB)
1.70
Vd = 5 V
1.15
Id
14
Gain
1.10
12
1.05
10
1.00
0
2
4
6
8
10
12
14
16
18
20
22
Pin (dBm)
38
2.40
Vd = 7 V
2.30
34
2.20
32
2.10
30
2.00
Pout
28
1.90
26
1.80
24
1.70
22
1.60
20
1.50
18
1.40
16
Id (A)
CW Pout (dBm) & Gain (dB)
36
1.30
Gain
Id
14
1.20
12
1.10
10
1.00
0
2
4
6
8
10
12
14
16
18
20
22
Pin (dBm)
7
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Vd = 5V & 7V, Idq = 1.05A, Pin = 22dBm, Pulsed Power, 25% DC
40
Pulsed Saturated Output Power (dBm)
39
38
7V
37
36
35
5V
34
33
32
31
30
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.2
8.4
8.6
Frequency (GHz)
50
Pulsed Power Added Eff. (%)
45
7V
40
5V
35
30
25
20
15
10
7
7.2
7.4
7.6
7.8
8
8.6
Frequency (GHz)
8
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Idq = 1.05A, Frequency @ 8GHz, Pulsed Power, 25% DC
38
1.70
Vd = 5 V
1.65
34
1.60
32
1.55
30
1.50
Pout
28
1.45
26
1.40
24
1.35
22
1.30
20
1.25
18
1.20
16
Id
14
1.15
Gain
1.10
12
1.05
10
1.00
0
2
4
6
8
10
12
14
16
Id (A)
Pout (dBm) & Gain (dB)
36
18
20
22
Pin (dBm)
38
36
2.30
34
2.20
32
2.10
30
2.00
Pout
28
1.90
26
1.80
24
1.70
22
1.60
20
1.50
18
1.40
16
1.30
Gain
Id
14
1.20
12
1.10
10
1.00
0
2
4
6
8
10
12
14
16
18
20
Id (A)
Pout (dBm) & Gain (dB)
2.40
Vd = 7 V
22
Pin (dBm)
9
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Vd = 5V & 7V, Idq = 1.05A, CW TOI
60
Vd = 5 V
55
7GHz
8GHz
50
IMR3 (dBc)
45
40
35
30
25
20
15
10
10
12
14
16
18
20
22
24
26
28
30
Output Power/Tone (dBm)
60
Vd = 7 V
55
7GHz
8GHz
50
IMR3 (dBc)
45
40
35
30
25
20
15
10
10
12
14
16
18
20
22
24
26
28
30
Output Power/Tone (dBm)
10
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias Conditions: Vd = 5 V & 7V, Idq = 1.05 A, Temperature Data
26
Vd = 5 V
24
22
20
Gain (dB)
18
16
14
12
10
8
6
4
-40C
+25C
+85C
2
0
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
26
Vd = 7 V
24
22
20
Gain (dB)
18
16
14
12
10
8
6
-40C
+25C
+85C
4
2
0
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
11
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Vd = 7V, Idq = 1.05A, Pin = 22dBm, CW Power, Temperature Data
40
39
CW Output Power (dBm)
38
37
36
35
34
33
32
-40C
31
+25C
+85C
30
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
50
CW Power Added Eff. (%)
45
40
35
30
25
20
-40C
15
+25C
+85C
10
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
12
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Measured Data
Bias: Vd = 7V, Idq = 1.05A, Pin = 22dBm, Pulsed Power, 25% DC, Temperature Data
40
Pulsed Output Power (dBm)
39
38
37
36
35
34
33
32
-40C
31
+25C
+85C
30
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
50
Pulsed Power Added Eff. (%)
45
40
35
30
25
20
-40C
+25C
+85C
15
10
7
7.2
7.4
7.6
7.8
8
8.2
8.4
8.6
Frequency (GHz)
13
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Mechanical Drawing
0.125 0.317
(0.005) (0.012)
0.616
(0.024)
2.889
(0.114)
3.684
(0.145)
2.610
(0.103)
2.447
(0.096)
2.363
(0.093)
2
2.491
(0.098)
4
3
R FP
1.305
(0.051)
1.305
(0.051)
5
1
R FP
0.248
(0.010)
0.163
(0.006)
8
7
0.119
(0.005)
6
0
0
0.317
(0.012)
0.616
(0.024)
2.889
(0.114)
3.800
(0.150)
Units: Millimeters (inches)
Thickness: 0.10 (0.004)
Chip edge to bond pad dimensions are shown to center of bond pad
Chip size tolerance: +/- 0.05 (0.002)
GND IS BACKSIDE OF MMIC
Bond pad # 1
Bond pad # 2, 8
Bond pad # 3, 7
Bond pad # 4, 6
Bond pad # 5
(RF Input)
(Vg)
(Vd1)
(Vd2)
(RF Output)
0.150 x 0.300
0.120 x 0.120
0.120 x 0.290
0.250 x 0.140
0.125 x 0.300
(0.006 x 0.012)
(0.005 x 0.005)
(0.005 x 0.011)
(0.010 x 0.006)
(0.005 x 0.012)
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
14
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Recommended Chip Assembly Diagram
Vg
Vd
1000pF
1000pF
1000pF
RF In
RF Out
1000pF
1000pF
1000pF
Vg
Vd
Vd = 5 to 7 V
Vg = -0.7 V Typical
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
15
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com
Advance Product Information
September 1, 2005
TGA2701
Assembly Process Notes
Reflow process assembly notes:
•
•
•
•
•
0
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max).
An alloy station or conveyor furnace with reducing atmosphere should be used.
No fluxes should be utilized.
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
•
•
•
•
•
•
•
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
•
•
•
•
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
0
Maximum stage temperature is 200 C.
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
16
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com