Advance Product Information September 1, 2005 10.5 – 12GHz High Power Amplifier TGA2710 Key Features • • • • • • Frequency Range: 10.5 -12.0 GHz 38 dBm Nominal Output Power 19 dB Nominal Gain Bias: 7-9V, 1.4A & 1.05A (~ 2A under RF drive) 0.25 um 3MI pHEMT Technology Chip Dimensions 3.52 x 2.61 x 0.10 mm (0.139 x 0.103 x 0.004 in) Primary Applications • • Point-to-Point Radio Communications Measured Fixtured Data Product Description The TriQuint TGA2710 is a High Power Amplifier MMIC for 10.5 – 12GHz applications. The part is designed using TriQuint’s 0.25um 3MI pHEMT production process. The TGA2710 nominally provides 38 dBm output power and 41% PAE for bias of 9V, 1.05A. The typical gain is 19dB. CW Gain (dB) 24 18 17 10.4 10.6 10.8 The TGA2710 is 100% DC and RF tested onwafer to ensure performance compliance. 7V, 1.4A 8V, 1.4A 9V, 1.05A 11 11.2 11.4 11.6 11.8 12 Frequency (GHz ) CW Saturated Output Power (dBm) Lead-Free & RoHS compliant. 20 19 16 15 14 The part is ideally suited for low cost markets such as Point-to-Point Radio and Communications. The TGA2710 has a protective surface passivation layer providing environmental robustness. 23 22 21 40 39 38 37 36 35 34 33 32 31 30 10.4 10.6 10.8 7V, 1.4A 8V, 1.4A 9V, 1.05A 11 11.2 11.4 11.6 11.8 12 Frequency (GHz ) Note: Devices is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice 1 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 TABLE I MAXIMUM RATINGS 1/ SYMBOL PARAMETER VALUE NOTES 10 V 2/ Vd Drain Voltage Vg Gate Voltage Range Id Drain Current 3.85 A 2/ 3/ Ig Gate Current 85 mA 3/ PIN Input Continuous Wave Power 23 dBm PD Power Dissipation 11.3 W -1 TO +0.5 V 0 TCH Operating Channel Temperature 150 C TM Mounting Temperature (30 Seconds) 320 0C TSTG Storage Temperature 2/ 4/ 5/ -65 to 150 0C 1/ These ratings represent the maximum operable values for this device. 2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed PD. 3/ Total current for the entire MMIC. 4/ When operated at this power dissipation with a base plate temperature of 60 0C, the median life is 1.0E+6 hrs. 5/ Junction operating temperature will directly affect the device median time to failure (MTTF). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 2 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25 0C Nominal) PARAMETER TYPICAL TYPICAL UNITS Frequency Range 10.5 - 12 10.5 - 12 GHz Drain Voltage, Vd 7 9 V Drain Current, Id 1.4 1.05 A Gate Voltage, Vg -0.6 -0.65 V Small Signal Gain, S21 19.5 18 dB Input Return Loss, S11 12 12 dB Output Return Loss, S22 12 12 dB CW Saturated Output Power @ 19 dBm Pin Pulsed Saturated Output Power @ 19 dBm Pin & 25% Duty Cycle CW Power Added Eff. @ 19 dBm Pin 36.5 38 dBm 36.7 38.5 dBm 40 39 % Pulsed Power Added Eff. @ 19 dBm Pin & 25% Duty Cycle 38 36 % -0.03 -0.03 dB/0C TCH (OC) TJC (qC/W) TM (HRS) Small Signal Gain Temperature Coefficient TABLE III THERMAL INFORMATION PARAMETER TEST CONDITIONS θJC Thermal Resistance (channel to Case) Vd = 7 V Id = 1.4 A Pdiss = 9.8W Small Signal 140 7.1 2.4E+6 θJC Thermal Resistance (channel to Case) Vd = 7 V Id = 1.7 A @ Psat Pdiss = 7.2 W Pout = 4.8 W (RF) 121 7.1 1.4E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70oC baseplate temperature. . 3 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data 24 23 22 Gain (dB) 21 20 19 18 17 16 7V, 1.4A 8V, 1.4A 9V, 1.05A 15 14 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 4 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data 0 -2 Input Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 7V, 1.4A -18 8V, 1.4A 9V, 1.05A -20 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 0 -2 Output Return Loss (dB) -4 -6 -8 -10 -12 -14 -16 7V, 1.4A 8V, 1.4A -18 9V, 1.05A -20 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 5 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Pin = 19dBm, CW Power 40 CW Saturated Output Power (dBm) 39 38 37 36 35 34 33 32 7V, 1.4A 8V, 1.4A 31 9V, 1.05A 30 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 50 48 CW Power Added Eff. (%) 46 44 42 40 38 36 34 7V, 1.4A 8V, 1.4A 32 9V, 1.05A 30 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 6 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Frequency @ 11GHz, CW Power 40 2.4 Vd = 7V, Id = 1.4A 2.3 36 2.2 34 2.1 32 2.0 Pout 30 1.9 28 1.8 26 1.7 Id 24 1.6 22 Id (A) CW Pout (dBm) & Gain (dB) 38 1.5 20 1.4 Gain 18 1.3 16 1.2 Pout Gain 14 1.1 Id 12 1.0 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 40 2.4 2.3 Vd = 8V, Id = 1.4A 36 2.2 34 2.1 32 2.0 Pout 30 1.9 28 1.8 Id 26 1.7 24 1.6 22 1.5 20 1.4 Gain 18 16 1.3 1.2 Pout Gain 14 Id (A) CW Pout (dBm) & Gain (dB) 38 1.1 Id 12 1.0 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 7 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Frequency @ 11GHz, CW Power 40 2.4 2.3 Vd = 9V, Id = 1.05A 36 2.2 34 2.1 32 2.0 Pout 30 1.9 28 1.8 Id 26 1.7 24 1.6 22 1.5 20 Id (A) CW Pout (dBm) & Gain (dB) 38 1.4 Gain 18 1.3 16 1.2 Pout Gain 14 1.1 Id 12 1.0 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 8 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Pin = 19dBm, Pulsed Power, 25% DC 40 Pulsed Saturated Output Power (dBm) 39 38 37 36 35 34 33 32 7V, 1.4A 8V, 1.4A 9V, 1.05A 31 30 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 50 Pulsed Power Added Eff. (%) 48 46 44 42 40 38 36 34 7V, 1.4A 8V, 1.4A 32 9V, 1.05A 30 10.4 10.6 10.8 11 11.2 11.4 11.6 11.8 12 Frequency (GHz) 9 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Frequency @ 11GHz, Pulsed Power, 25% DC 40 2.4 Vd = 7V, Id = 1.4A 2.3 36 2.2 34 2.1 32 2.0 Pout 30 1.9 28 1.8 26 1.7 24 1.6 Id 22 Id (A) Pulsed Pout (dBm) & Gain (dB) 38 1.5 20 1.4 Gain 18 1.3 16 1.2 Pout Gain Id 14 1.1 12 1.0 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 40 2.4 Vd = 8V, Id = 1.4A 2.3 36 2.2 34 2.1 32 2.0 Pout 30 1.9 28 1.8 26 1.7 Id 24 1.6 22 Id (A) Pulsed Pout (dBm) & Gain (dB) 38 1.5 20 1.4 Gain 18 1.3 16 1.2 Pout Gain Id 14 1.1 12 1.0 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 10 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Frequency @ 11GHz, Pulsed Power, 25% DC 40 2.4 Vd = 9V, Id = 1.05A 2.3 36 2.2 34 2.1 32 2.0 Pout 30 1.9 28 1.8 Id 26 1.7 24 1.6 22 Id (A) Pulsed Pout (dBm) & Gain (dB) 38 1.5 Gain 20 1.4 18 1.3 16 1.2 Pout Gain 14 1.1 Id 12 1.0 0 2 4 6 8 10 12 14 16 18 20 Pin (dBm) 11 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Measured Data Frequency @ 11GHz, CW TOI 45 44 CW TOI @ 11GHz (dBm) 43 42 41 40 39 38 37 7V, 1.4A 8V, 1.4A 9V, 1.05A 36 35 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Pow er/T one (dBm) 70 7V, 1.4A 8V, 1.4A 9V, 1.05A 65 CW IMR3 @ 11GHz (dBc) 60 55 50 45 40 35 30 25 20 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Output Pow er/T one (dBm) 12 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Mechanical Drawing 0.172 0.238 (0.007) (0.009) 2.610 (0.103) 2.476 (0.097) 0.300 (0.012) 0.133 (0.005) 0 2.717 (0.107) 3.411 (0.134) 2.491 (0.098) 4 2 3 2.310 (0.091) 1.305 (0.051) 0.614 (0.024) 1 5 8 0 0.238 (0.009) 7 0.119 (0.005) 6 2.717 (0.107) 0.614 (0.024) 1.305 (0.051) 3.524 (0.139) Units: Millimeters (inches) Thickness: 0.10 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.05 (0.002) GND IS BACKSIDE OF MMIC Bond pad # 1 Bond pad # 2, 8 Bond pad # 3, 7 Bond pad # 4, 6 Bond pad # 5 (RF Input) (Vg) (Vd1) (Vd2) (RF Output) 0.150 x 0.300 0.120 x 0.120 0.120 x 0.290 0.250 x 0.140 0.125 x 0.300 (0.006 x 0.012) (0.005 x 0.005) (0.005 x 0.011) (0.010 x 0.006) (0.005 x 0.012) GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 13 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Recommended Chip Assembly Diagram Vd Vg 1000pF 1000pF 1000pF RF Out RF In 1000pF 1000pF 1000pF Vd Vg Vd = 7 to 9 V Vg = -0.6 V Typical GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 14 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com Advance Product Information September 1, 2005 TGA2710 Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 15 TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: [email protected] Web: www.triquint.com