Advance Product Information February 7, 2006 13 - 15 GHz 4W Power Amplifier TGA2502 Key Features • • • • • • 0.5 um pHEMT Technology >25 dB Nominal Gain >36 dBm Nominal Psat 44 dBm Nominal IP3 @ 14 GHz Bias 7V @ 1.3A Idq, 2.1A under RF drive Chip Dimensions 2.5mm x 2.7mm x 0.1 mm Chip Dimensions 2.5 mm x 2.7 mm x 0.1 mm Fixtured Measured Performance Primary Applications Bias Conditions: Vd = 7V, Idq = 1.3A • 30 Ku-Band VSAT Transmit 25 Gain (dB) 20 15 10 5 0 -5 -10 12 12.5 13 13.5 14 14.5 15 15.5 16 Frequency (GHz) , qIdq = 1.3A Bias Conditions: Vd = 7V, 40 35 Pout (dBm) 13GHz 30 14GHz 15GHz 15.5GHz 25 16GHz 16.5GHz 20 17GHz 15 10 0 3 6 9 12 15 18 Pin (dBm) Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to change without notice. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Advance Product Information February 7, 2006 TGA2502 TABLE I MAXIMUM RATINGS 1/ Symbol Parameter Value V+ Positive Supply Voltage 8V I+ Positive Supply Current 2.3 A PD Power Dissipation TBD PIN Input Continuous Wave Power 24 dBm TCH Operating Channel Temperature 150 °C TM Mounting Temperature (30 seconds) 320 °C TSTG Storage Temperature Notes 2/ 3/, 4/ -65 °C to 150 °C 1/ These values represent the maximum operable values of this device 2/ Total current for the entire MMIC 3/ These ratings apply to each individual FET 4/ Junction operating temperature will directly affect the device mean time to failure (MTTF). For maximum life it is recommended that junction temperatures be maintained at the lowest possible levels. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Advance Product Information February 7, 2006 TGA2502 TABLE II ELECTRICAL CHARACTERISTICS (Ta = 25oC ± 5oC) PARAMETER TYPICAL UNITS 7 V 1.3 A Drain Operating Voltage Quiescent Current Small Signal Gain 25 dB Gain Flatness (Freq=13.5 – 15 GHz) 0.1 dB/100MHz Input Return Loss (Linear Small Signal) 16 dB Output Return Loss (Linear Small Signal) 16 dB <-50 dB 36 dBm 30 % -0.01 dB/0C Reverse Isolation CW Output Power @ Psat at 14.5Ghz Power Add Efficiency @ Psat 0 P1dB Temperature Coeff. TC (-40 to + 70 C) TABLE IV THERMAL INFORMATION PARAMETER RθJC Thermal Resistance (channel to Case) TEST CONDITIONS Vd = 7 V Id = 1.3 A Pdiss = 9.1 W TCH O ( C) RTJC (qC/W) TM (HRS) 123 5.8 1.2E+7 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo o Carrier at 70 C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Advance Product Information February 7, 2006 TGA2502 Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A ± 5% 30 25 Gain (dB) 20 15 10 5 0 -5 -10 12 12.5 13 13.5 14 14.5 Frequency (GHz) 15 15.5 16 40 35 Pout (dBm) 13GHz 30 14GHz 15GHz 15.5GHz 25 16GHz 16.5GHz 20 17GHz 15 10 0 3 6 9 12 15 18 Pin (dBm) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Advance Product Information February 7, 2006 TGA2502 Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A ± 5% 0 -5 S11 (dB) -10 -15 -20 -25 -30 -35 8 10 12 14 16 18 20 22 18 20 22 Frequency (GHz) 0 -5 -10 S22 (dB) -15 -20 -25 -30 -35 -40 -45 8 10 12 14 16 Frequency (GHz) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Advance Product Information February 7, 2006 TGA2502 Measured Fixtured Data Bias Conditions: Vd = 7V, Idq = 1.3A ± 5% 48 TOI (dBm) 45 13 GHz 13.5 Ghz 14 GHz 14.5 GHz 15 GHz 15.5 GHz 16 GHz 16.5 GHz 17 GHz 42 39 36 33 30 10 15 20 25 30 35 Fundamental output power per tone (dBm) 70 60 13 GHz IMD3 (dBc) 50 13.5 GHz 14 GHz 40 14.5 GHz 15 GHz 30 15.5 GHz 16 GHz 20 16.5 GHz 17 GHz 10 0 10 15 20 25 30 35 Fundamental output power per tone (dBm) TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Advance Product Information February 7, 2006 TGA2502 Chip & Assembly Diagram 1 PF PS VD RF OUT RF IN VG VD PS Assembly Note: 10 Ω 470 PF • AuSn Vacuum Re-flow 1 PF TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Advance Product Information Mechanical Drawing February 7, 2006 TGA2502 GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Advance Product Information February 7, 2006 TGA2502 Assembly Process Notes Reflow process assembly notes: • • • • • 0 Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 C (30 seconds max). An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: • • • • • • • Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: • • • • Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. 0 Maximum stage temperature is 200 C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9