Si6874EDQ
New Product
Vishay Siliconix
Dual N-Channel 20-V (D-S) MOSFET, Common Drain
VDS (V)
20
rDS(on) ()
ID (A)
0.026 @ VGS = 4.5 V
6.5
0.031 @ VGS = 2.5 V
5.8
0.039 @ VGS = 1.8 V
5.0
D
D
TSSOP-8
8
D
7
D
3
6
D
4
5
D
S1
1
G1
2
S2
G2
Si6874EDQ
2.4 k
2.4 k
G1
G2
Top View
N-Channel
S1
N-Channel
S2
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
12
Continuous Drain Current (TJ = 150C)a
TA = 25C
TA = 85C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25C
Maximum Power Dissipationa
TA = 85C
Operating Junction and Storage Temperature Range
PD
V
6.5
5.3
4.7
4.2
IDM
Unit
A
30
1.50
1.10
1.67
1.20
1.06
0.76
TJ, Tstg
W
C
–55 to 150
Parameter
Maximum Junction-to-Ambienta
Symbol
t 10 sec
Steady State
Maximum Junction-to-Foot (Drain)
Steady State
RthJA
RthJF
Typical
Maximum
60
75
86
105
38
45
Unit
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
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1
Si6874EDQ
New Product
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
VGS(th)
VDS = VGS, ID = 250 mA
0.40
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
a
D i S
Drain-Source
On-State
O S
Resistance
R i
Forward
Transconductancea
Diode Forward Voltagea
VDS = 0 V, VGS = "4.5 V
"1
mA
VDS = 0 V, VGS = "12 V
"10
mA
VDS = 16 V, VGS = 0 V
1
VDS = 16 V, VGS = 0 V, TJ = 85C
20
VDS = 5 V, VGS = 4.5 V
rDS(on)
V
mA
20
A
VGS = 4.5 V, ID = 6.5 A
0.021
0.026
VGS = 2.5 V, ID = 5.8 A
0.025
0.031
VGS = 1.8 V, ID = 5.0 A
0.031
0.039
gfs
VDS = 10 V, ID = 6.5 A
25
VSD
IS = 1.5 A, VGS = 0 V
0.65
1.1
12.5
18
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = 10 V,
V VGS = 4
4.5
5V
V, ID = 6.5
65A
nC
C
2.7
Gate-Drain Charge
Qgd
2.7
Turn-On Delay Time
td(on)
0.7
1.0
tr
1.3
2.0
5.5
8.0
4.6
7.0
Rise Time
Turn-Off Delay Time
VDD = 10 V
V,, RL = 10 W
ID ^ 1 A,
A VGEN = 4
4.5
5V
V, RG = 6 W
td(off)
Fall Time
tf
ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
%(&##!% '$ %("&# " %
% &##!% '$ %("&# " %
10,000
8
I GSS – Gate Current (mA)
I GSS – Gate Current (mA)
1,000
6
4
2
100
TJ = 150C
10
1
TJ = 25C
0.1
0.01
0
0
3
6
9
12
15
VGS – Gate-to-Source Voltage (V)
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2
18
0
3
6
9
12
15
VGS – Gate-to-Source Voltage (V)
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
Si6874EDQ
New Product
Vishay Siliconix
&%"&% #%#$%$
# $# #%#$%$
30
30
VGS = 5 thru 2 V
TC = –55C
24
24
I D – Drain Current (A)
I D – Drain Current (A)
25C
18
12
1.5 V
6
0
18
125C
12
6
0
0
2
4
6
8
10
12
0
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.5
"% ($$% '$ # &## %
2500
0.05
2000
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
2.0
VGS – Gate-to-Source Voltage (V)
0.06
0.04
VGS = 1.8 V
0.03
VGS = 2.5 V
VGS = 4.5 V
0.02
Ciss
1500
1000
Coss
500
0.01
0
Crss
0
0
6
12
18
24
0
30
4
ID – Drain Current (A)
1.8
r DS(on) – On-Resistance ()
(Normalized)
VDS = 10 V
ID = 6.5 A
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
% #
5
V GS – Gate-to-Source Voltage (V)
1.5
3
2
1
($$% '$ & %! "#%&#
1.6
VGS = 4.5 V
ID = 6.5 A
1.4
1.2
1.0
0.8
0
0
3
6
9
Qg – Total Gate Charge (nC)
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
12
15
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (C)
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Si6874EDQ
New Product
Vishay Siliconix
"&#)#! " "#(# " %
!)$$%! '$ %)%")"&# " %
0.08
20
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
10
TJ = 150C
TJ = 25C
0.06
ID = 6.5 A
0.04
0.02
0
1
0
0.4
0.6
0.8
1.0
0
1.2
VSD – Source-to-Drain Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
#$" " %
Single Pulse Power, Junction-to-Ambient
0.4
32
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
24
–0.0
–0.2
16
8
–0.4
–0.6
–50
–25
0
25
50
75
100
125
150
0
10–2
10–1
1
10
100
Time (sec)
TJ – Temperature (C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 86C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
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4
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
Si6874EDQ
New Product
Vishay Siliconix
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
Document Number: 71252
S-01753—Rev. A, 14-Aug-00
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
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